@article {Musat2006219,
	title = {Effect of post-heat treatment on the electrical and optical properties of ZnO:Al thin films},
	journal = {Thin Solid Films},
	volume = {502},
	number = {1-2},
	year = {2006},
	note = {<p>cited By 66</p>
},
	pages = {219-222},
	abstract = {<p>This paper presents the effect of post-heating temperature and atmosphere on the electrical and optical properties of ZnO:Al thin films prepared by the sol-gel method. The electrical properties of the n-type semiconductor thin films showed that for the final films, the values of carrier concentration ranged between 2.76 and 9.96 {\texttimes} 1019 cm- 3, the Hall mobility values between 7 and 34.1 cm2/V s and the resistivity values between 2.9 {\texttimes} 10- 3 and 5.0 {\texttimes} 10- 2 Ω cm, depending on the processing conditions. For the thin film doped with 2 wt.\% Al, preheated at 400 {\textdegree}C and post-heated for 1 h in air at 600 {\textdegree}C, a resistivity of 2.9 {\texttimes} 10- 3 Ω cm has been reached after annealing under a reducing atmosphere of forming gas. The optical transmittance spectra of the only post-heated films and of the post-heated and annealed films showed a good transmittance (75-90\%) within the visible wavelength region and some small effects of Al-doping concentration and annealing treatment in forming gas. {\textcopyright} 2005 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2005.07.278},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33344473579\&doi=10.1016\%2fj.tsf.2005.07.278\&partnerID=40\&md5=a98c15d66fb116375e99672c801e5a67},
	author = {Musat, V.a and Teixeira, B.b and Fortunato, E.b and Monteiro, R.C.C.b}
}
