Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics
- Citation:
- Pei, Z. L., L. Pereira, G. GONCALVES, P. Barquinha, N. Franco, E. Alves, A. M. B. Rego, R. Martins, and E. Fortunato. "Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics." Electrochemical and Solid State Letters. 12 (2009): G65-G68.
Abstract:
n/a
Notes:
Times Cited: 11
Related External Link