<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.</style></author><author><style face="normal" font="default" size="100%">Pimentel, A.</style></author><author><style face="normal" font="default" size="100%">Goncalves, A.</style></author><author><style face="normal" font="default" size="100%">Marques, A.</style></author><author><style face="normal" font="default" size="100%">Pereira, L.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Recent advances in ZnO transparent thin film transistors</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2005</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Sep 1</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000231209900042</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">1-2</style></number><volume><style face="normal" font="default" size="100%">487</style></volume><pages><style face="normal" font="default" size="100%">205-211</style></pages><isbn><style face="normal" font="default" size="100%">0040-6090</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">n/a</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:000231209900042</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;Times Cited: 2348th International Conference on Polycrystalline SemiconductorsSep 05-10, 2004Potsdam, GERMANY&lt;/p&gt;
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