<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R.</style></author><author><style face="normal" font="default" size="100%">Pereira, L.</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.</style></author><author><style face="normal" font="default" size="100%">Correia, N.</style></author><author><style face="normal" font="default" size="100%">GONCALVES, G</style></author><author><style face="normal" font="default" size="100%">Ferreira, I.</style></author><author><style face="normal" font="default" size="100%">Dias, C.</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Teherani, F. H.</style></author><author><style face="normal" font="default" size="100%">Look, D. C.</style></author><author><style face="normal" font="default" size="100%">Litton, C. W.</style></author><author><style face="normal" font="default" size="100%">Rogers, D. J.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Floating gate memory paper transistor</style></title><secondary-title><style face="normal" font="default" size="100%">Oxide-Based Materials and Devices</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">Proceedings of SPIE</style></tertiary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000284035700022</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">7603</style></volume><isbn><style face="normal" font="default" size="100%">0277-786X978-0-8194-7999-0</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">n/a</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:000284035700022</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;Times Cited: 0Conference on Oxide-based Materials and DevicesJan 24-27, 2010San Francisco, CA&lt;/p&gt;
</style></notes></record></records></xml>