Barquinha, P. M. C., A. R. X. Barros, C. W. Byun, N. F. O. Correia, V. M. L. Figueiredo, E. M. C. Fortunato, C. S. Hwang, R. F. P. Martins, S. H. Park, and A. R. X. Barris Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate. Electronics&Telecom Res Inst; Univ New Lisbon Faculty Sci&Technology; Univ Lisboa Faculdade Ciencias&Tecnolo; Electronics & Telecom Res Inst; Univ Lisboa Faculdade Ciencias & Tecnolo; Univ New Lisbon Faculty Sci & Technology, Submitted.