@article {8022,
	title = {Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate},
	year = {Submitted},
	note = {n/a},
	publisher = {Electronics\&Telecom Res Inst; Univ New Lisbon Faculty Sci\&Technology; Univ Lisboa Faculdade Ciencias\&Tecnolo; Electronics \& Telecom Res Inst; Univ Lisboa Faculdade Ciencias \& Tecnolo; Univ New Lisbon Faculty Sci \& Technology},
	abstract = {n/a},
	isbn = {US2011253997-A1; KR2012138254-A; KR1420289-B1; US9053937-B2},
	url = {<Go to ISI>://DIIDW:2011N22416},
	author = {Barquinha, P. M. C. and Barros, A. R. X. and Byun, C. W. and Correia, N. F. O. and Figueiredo, V. M. L. and Fortunato, E. M. C. and Hwang, C. S. and Martins, R. F. P. and Park, S. H. and Barris, A. R. X.}
}
