Manuel J. Mendes Website

Indium tin oxide (ITO) is the current standard state-of-the-art transparent conductive oxide (TCO), given its remarkable optical and electrical properties. However, the scarcity of indium carries an important drawback for the long-term application due to its intensive use in many optoelectronic devices such as displays, solar cells, and interactive systems. Zinc oxide-based TCOs can be a cost-effective and viable alternative, but the limitations imposed by their transmittance versus resistivity tradeoff still keep them behind ITO. In this work, an in-depth study of the structural and compositional material changes induced by specific postannealing treatments is presented, based on aluminum zinc oxide (AZO) and hydrogenated AZO (AZO:H) thin films grown by rf-magnetron sputtering at room temperature that allows an extensive understanding of the films' electrical/structural changes and the ability to tune their physical parameters to yield increasingly better performances, which put them in line with the best ITO quality standards. The present investigation comprises results of thermal annealing at atmospheric pressure, vacuum, forming gas, H2 and Ar atmospheres and plasmas. Overall the study being performed leads to a decrease in resistivity above 40{%}, reaching $\rho$ ≈ 3 × 10−4 $Ømega$ cm, with an average optical transmittance in the visible region around 88{%}. Such results are equivalent to the properties of state-of-the-art ITO.

© 2017 Elsevier B.V. Ultrasonic spray pyrolysis deposition of ZnO-based materials offers an attractive high-throughput low-cost route towards industrial production of high-quality transparent conductive oxide (TCO) thin-films. In this work, undoped and aluminium-doped ZnO films have been grown employing ultrasonic spray pyrolysis at relatively low-temperate (300 °C), followed by a post-annealing treatment. The role of Al concentration in the starting solution, as well as the rapid thermal annealing (RTA) atmosphere, were investigated and correlated to the morphological, structural, electrical and optical properties of the films. The remarkable enhancement of electrical conductivity attained here is mainly ascribed to the combined effects of: (1) homogenous incorporation of Al3+into the ZnO matrix, which enhances crystal quality providing higher electronic mobility; and (2) the RTA which releases the localized electrons caused by oxygen absorption and thereby increases the free carrier density. Under optimum deposition conditions, a low resistivity and a high optical transmittance around 4 × 10−3$Ømega$ cm and 87{%}, respectively, were obtained. The application of the RTA post-process after low temperature growth has several advantages relative to the direct growth at high temperature (usually 400–575 °C), such as shorter growth time and lower cost associated to the spray pyrolysis equipment requirements and usage. The results suggest that the electrical and optical properties of the ZnO:Al films can be further improved for solar cell applications by controlling the temperature of the post-deposition annealing in reducing atmosphere.

Abstract.  The concept of intermediate band solar cell (IBSC) is, apparently, simple to grasp. However, since the idea was proposed, our understanding has improved and some concepts can now be explained more clearly than when the concept was initially introduced. Clarifying these concepts is important, even if they are well known for the advanced researcher, so that research efforts can be driven in the right direction from the start. The six pieces of this work are: Does a miniband need to be formed when the IBSC is implemented with quantum dots? What are the problems for each of the main practical approaches that exist today? What are the simplest experimental techniques to demonstrate whether an IBSC is working as such or not? What is the issue with the absorption coefficient overlap and the Mott's transition? What would the best system be, if any?

© 2018 The Authors The use of disposable recyclable, eco-friendly, sustainable and low-cost devices with multiple functions is becoming a demand in the emerging area of the Internet of Things as a way to decrease the degree of complexity of the electronic circuits required to serve a plethora of applications. Moreover, for low-cost disposable applications, it is relevant the systems to be recyclable. The idea beyond the present study concerns to exploit our imagination with simple questions such as: What happens if it is possible to have a simple and universal device architecture, easy to implement on paper substrates, but capable to provide different multiple functionalities? It would be possible to have a common template for electronic systems on paper that would be then easily customized depending on the final application? The present study answers to these demands by reporting the physics and electronics behavior of a multigate paper transistor where paper is simultaneously the substrate and the dielectric, while a metal-oxide-semiconductor (IGZO) is used as the active channel. Moreover, the same device is able to present logic functionalities simply by varying the amplitude and frequency of the input gate signals. These transistors operate at drain voltages of 1 V with low power, exhibiting ION/IOFF{\textgreater} 104and a mobility ≈2 cm2V−1s−1, serving the specifications for a broad range of smart disposable low power electronics. To sustain all this, an analytical compact model was developed able to precisely reproduce the response of paper-based dual-gate FETs and provide full understanding of their unique and innovative operational characteristics.

The application of diffraction gratings to solar cells is a promising approach to superseding the light trapping limits of conventional Lambertian structures. In this paper a mathematical formalism is derived for calculating the absorption that can be expected in a solar cell equipped with a diffraction grating, which can be applied to any lattice geometry and grating profile. Furthermore, the formalism is used to calculate the upper limit of total absorption that can theoretically be achieved using a diffraction grating. The derived formalism and limits are valid when the solar cell thickness is greater than the coherence length of the illuminating solar spectrum. Comparison is made to the upper limit achievable using an angularly selective Rugate filter, which is also calculated. Both limits are found to be considerably higher than the Lambertian limit within the range of sunlight concentration factors practically employed in photovoltaic systems (1–1000×). The upper limit of absorption using the diffraction grating is shown to be equal to the thermodynamic limit for all absorbances and concentration factors. The limit for the Rugate filter is generally lower, but tends to the thermodynamic limit for lower cell absorbances. Copyright © 2011 John Wiley {&} Sons, Ltd.

The interaction of light with wavelength-sized photonic nanostructures is highly promising for light management applied to thin-film photovoltaics. Several light trapping effects come into play in the wave optics regime of such structures that crucially depend on the parameters of the photonic and absorbing elements. Thus, multi-parameter optimizations employing exact numerical models, as performed in this work, are essential to determine the maximum photocurrent enhancement that can be produced in solar cells.Generalized spheroidal geometries and high-index dielectric materials are considered here to model the design of the optical elements providing broadband absorption enhancement in planar silicon solar cells. The physical mechanisms responsible for such enhancement are schematized in a spectral diagram, providing a deeper understanding of the advantageous characteristics of the optimized geometries. The best structures, composed of TiO2 half-spheroids patterned on the cells' top surface, yield two times higher photocurrent (up to 32.5 mA/cm2 in 1.5 $μ$m thick silicon layer) than the same devices without photonic schemes.These results set the state-of-the-art closer to the theoretical Lambertian limit. In addition, the considered light trapping designs are not affected by the traditional compromise between absorption enhancement versus current degradation by recombination, which is a key technological advantage.

A novel type of plasmonic light trapping structure is presented in this paper, composed of metal nanoparticles synthesized in colloidal solution and self-assembled in uniform long-range arrays using a wet-coating method. The high monodispersion in size and spherical shape of the gold colloids used in this work allows a precise match between their measured optical properties and electromagnetic simulations performed with Mie theory, and enables the full exploitation of their collective resonant plasmonic behavior for light-scattering applications. The colloidal arrays are integrated in plasmonic back reflector (PBR) structures aimed for light trapping in thin film solar cells. The PBRs exhibit high diffuse reflectance (up to 75{%}) in the red and near-infrared spectrum, which can pronouncedly enhance the near-bandgap photocurrent generated by the cells. Furthermore, the colloidal PBRs are fabricated by low-temperature ({\textless}120 °C) processes that allow their implementation, as a final step of the cell construction, in typical commercial thin film devices generally fabricated in a superstrate configuration. © 2014 the Partner Organisations.

© 2015 IOP Publishing Ltd. The intense light scattered from metal nanoparticles sustaining surface plasmons makes them attractive for light trapping in photovoltaic applications. However, a strong resonant response from nanoparticle ensembles can only be obtained if the particles have monodisperse physical properties. Presently, the chemical synthesis of colloidal nanoparticles is the method that produces the highest monodispersion in geometry and material quality, with the added benefits of being low-temperature, low-cost, easily scalable and of allowing control of the surface coverage of the deposited particles. In this paper, novel plasmonic back-reflector structures were developed using spherical gold colloids with appropriate dimensions for pronounced far-field scattering. The plasmonic back reflectors are incorporated in the rear contact of thin film n-i-p nanocrystalline silicon solar cells to boost their photocurrent generation via optical path length enhancement inside the silicon layer. The quantum efficiency spectra of the devices revealed a remarkable broadband enhancement, resulting from both light scattering from the metal nanoparticles and improved light incoupling caused by the hemispherical corrugations at the cells' front surface formed from the deposition of material over the spherically shaped colloids.

A colloidal deposition technique is presented to construct long-range ordered hybrid arrays of self-assembled quantum dots and metal nanoparticles. Quantum dots are promising for novel opto-electronic devices but, in most cases, their optical transitions of interest lack sufficient light absorption to provide a significant impact in their implementation. A potential solution is to couple the dots with localized plasmons in metal nanoparticles. The extreme confinement of light in the near-field produced by the nanoparticles can potentially boost the absorption in the quantum dots by up to two orders of magnitude. In this work, light extinction measurements are employed to probe the plasmon resonance of spherical gold nanoparticles in lead sulfide colloidal quantum dots and amorphous silicon thin-films. Mie theory computations are used to analyze the experimental results and determine the absorption enhancement that can be generated by the highly intense near-field produced in the vicinity of the gold nanoparticles at their surface plasmon resonance. The results presented here are of interest for the development of plasmon-enhanced colloidal nanostructured photovoltaic materials, such as colloidal quantum dot intermediate-band solar cells.

In order to enhance infrared light absorption in sub-bandgap transitions in an intermediate band solar cell, the scattered near-field potential from uncoated and coated metallic nanoparticles with a spheroidal shape is calculated with the electrostatic model. The absorption enhancement produced at the surface plasmon frequency of the nanoparticles can be of several orders of magnitude in some cases.

{\textless}h2{\textgreater}Summary{\textless}/h2{\textgreater}{\textless}p{\textgreater}Recent trends in photovoltaics demand ever-thin solar cells to allow deployment in consumer-oriented products requiring low-cost and mechanically flexible devices. For this, nanophotonic elements in the wave-optics regime are highly promising, as they capture and trap light in the cells' absorber, enabling its thickness reduction while improving its efficiency. Here, novel wavelength-sized photonic structures were computationally optimized toward maximum broadband light absorption. Thin-film silicon cells were the test bed to determine the best performing parameters and study their optical effects. Pronounced photocurrent enhancements, up to 37{%}, 27{%}, and 48{%}, respectively, in ultra-thin (100- and 300-nm-thick) amorphous, and thin (1.5-$μ$m) crystalline silicon cells are demonstrated with honeycomb arrays of semi-spheroidal dome or void-like elements patterned on the cells' front. Also importantly, key advantages in the electrical performance are anticipated, since the photonic nano/micro-nanostructures do not increase the cell roughness, therefore not contributing to recombination, which is a crucial drawback in state-of-the-art light-trapping approaches.{\textless}/p{\textgreater}

The spectra of localized surface plasmon resonances (LSPRs) in self-assembled silver nanoparticles (NPs), prepared by solid-state dewetting of thin films, are discussed in terms of their structural properties. We summarize the dependences of size and shape of NPs on the fabrication conditions with a proposed structural-phase diagram. It was found that the surface coverage distribution and the mean surface coverage (SC) size were the most appropriate statistical parameters to describe the correlation between the morphology and the optical properties of the nanostructures. The results are interpreted with theoretical predictions based on Mie theory. The broadband scattering efficiency of LSPRs in the nanostructures is discussed towards application as plasmon-enhanced back reflectors in thin-film solar cells.

Plasmonic light trapping in thin film silicon solar cells is a promising route to achieve high efficiency with reduced volumes of semiconductor material. In this paper, we study the enhancement in the opto-electronic performance of thin a-Si:H solar cells due to the light scattering effects of plasmonic back reflectors (PBRs), composed of self-assembled silver nanoparticles (NPs), incorporated on the cells{&}{\#}x2019; rear contact. The optical properties of the PBRs are investigated according to the morphology of the NPs, which can be tuned by the fabrication parameters. By analyzing sets of solar cells built on distinct PBRs we show that the photocurrent enhancement achieved in the a-Si:H light trapping window (600 {&}{\#}x2013; 800 nm) stays in linear relation with the PBRs diffuse reflection. The best-performing PBRs allow a pronounced broadband photocurrent enhancement in the cells which is attributed not only to the plasmon-assisted light scattering from the NPs but also to the front surface texture originated from the conformal growth of the cell material over the particles. As a result, remarkably high values of Jsc and Voc are achieved in comparison to those previously reported in the literature for the same type of devices.