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Pereira, L., H. Águas, R. M. S. Martins, P. Vilarinho, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by metal induced crystallization using different metals}." Thin Solid Films. 451-452 (2004): 334-339. AbstractWebsite
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Pereira, L., H. Águas, M. Beckers, R. M. S. Martins, E. Fortunato, and R. Martins. "{Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry}." Journal of Non-Crystalline Solids. 354 (2008): 2319-2323. AbstractWebsite
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Pereira, L., H. Águas, L. Gomes, P. Barquinha, E. Fortunato, and R. Martins. "{Nanostructured Silicon Based Thin Film Transistors Processed in the Plasma Dark Region}." Journal of Nanoscience and Nanotechnology. 10 (2010): 2938-2943. AbstractWebsite
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Pereira, L., H. Águas, E. Fortunato, and R. Martins. "{Nanostructure characterization of high k materials by spectroscopic ellipsometry}." Applied Surface Science. 253 (2006): 339-343. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors}." Thin Solid Films. 487 (2005): 102-106. AbstractWebsite
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Pereira, L., H. Águas, R. M. Martins, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by gold metal induced crystallization}." Journal of Non-Crystalline Solids. 338-340 (2004): 178-182. AbstractWebsite
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Pereira, L., A. Marques, H. Águas, N. Nedev, S. Georgiev, E. Fortunato, and R. Martins. "{Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application}." Materials Science and Engineering: B. 109 (2004): 89-93. AbstractWebsite
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Pereira, L., Barquinha, P., Fortunato, and E. "{Low temperature high k dielectric on poly-Si TFTs}." 354 (2008): 2534-2537. AbstractWebsite
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Pereira, Lu\'ıs, Pedro Barquinha, Gonçalo Gonçalves, Elvira Fortunato, and Rodrigo Martins. "{Multicomponent dielectrics for oxide TFT}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826316–16. Abstract
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Pereira, L., H. Águas, P. Vilarinho, E. Fortunato, and R. Martins. "{Metal induced crystallization: Gold versus aluminium}." Journal of Materials Science. 40 (2005): 1387-1391. AbstractWebsite
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Pereira, Lu\'ıs, Pedro Barquinha, Gonçalo Gonçalves, Anna Vilà, Antonis Olziersky, Joan Morante, Elvira Fortunato, and Rodrigo Martins. "{Sputtered multicomponent amorphous dielectrics for transparent electronics}." physica status solidi (a). 206 (2009): 2149-2154. AbstractWebsite
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Pereira, L., D. Brida, E. Fortunato, I. Ferreira, H. Águas, V. Silva, M. F. M. Costa, V. Teixeira, and R. Martins. "{a-Si:H interface optimisation for thin film position sensitive detectors produced on polymeric substrates}." Journal of Non-Crystalline Solids. 299-302 (2002): 1289-1294. AbstractWebsite
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Pereira, L., R. M. S. Martins, N. Schell, E. Fortunato, and R. Martins. "{Nickel-assisted metal-induced crystallization of silicon: Effect of native silicon oxide layer}." Thin Solid Films. 511-512 (2006): 275-279. AbstractWebsite
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Pereira, L., D. Gaspar, D. Guerin, a Delattre, E. Fortunato, and R. Martins. "{The influence of fibril composition and dimension on the performance of paper gated oxide transistors.}." Nanotechnology. 25 (2014): 094007. AbstractWebsite

Paper electronics is a topic of great interest due the possibility of having low-cost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiber/nanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiber/nanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm(2) V(-1) s(-1), with an ION/IOFF ratio close to 10(5).

Pereira, L, Barquinha, P, Fortunato, and E. "{Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization}." 514-516 (2006): 28-32. AbstractWebsite
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Pereira, L., L. Raniero, P. Barquinha, E. Fortunato, and R. Martins. "{Impedance study of the electrical properties of poly-Si thin film transistors}." Journal of Non-Crystalline Solids. 352 (2006): 1737-1740. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide}." Materials Science and Engineering: B. 118 (2005): 210-213. AbstractWebsite
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Pereira, Luis, Aguas, Hugo, Beckers, and Manfred. "{Characterization of nickel induced crystallized silicon by spectroscopic ellipsornetry}." 910 (2007): 529-534. AbstractWebsite
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Pimentel, A., E. Fortunato, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, and R. Martins. "{Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices}." Thin Solid Films. 487 (2005): 212-215. AbstractWebsite
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