Publications

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Fortunato, E., V. Assunção, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{High quality conductive gallium-doped zinc oxide films deposited at room temperature}." Thin Solid Films. 451-452 (2004): 443-447. AbstractWebsite
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Fortunato, E. M. C., P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gon�alves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins. "{Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature}." Advanced Materials. 17 (2005): 590-594. AbstractWebsite
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Fortunato, E, Pimentel, A, Pereira, and L. "{High field-effect mobility zinc oxide thin film transistors produced at room temperature}." 338 (2004): 806-809. AbstractWebsite
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Fortunato, E., L. Raniero, L. Silva, A. Goncalves, A. Pimentel, P. Barquinha, H. Aguas, L. Pereira, G. GONCALVES, and I. Ferreira. "{Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications}." Solar Energy Materials and Solar Cells. 92 (2008): 1605-1610. AbstractWebsite
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Fortunato, E, Goncalves, A, and Marques. "{Gallium zinc oxide coated polymeric substrates for optoelectronic applications}." 769 (2003): 291-296. AbstractWebsite
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Fortunato, Elvira, Luı́s Pereira, Hugo Águas, Isabel Ferreira, and Rodrigo Martins. "{Flexible position sensitive photodetectors based on a-Si:H heterostructures}." Sensors and Actuators A: Physical. 116 (2004): 119-124. AbstractWebsite
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Fortunato, E., P. Barquinha, G. Gonçalves, L. Pereira, and R. Martins. "{High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors}." Solid-State Electronics. 52 (2008): 443-448. AbstractWebsite
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Fortunato, E., Goncalves, A., and Marques. "{Multifunctional thin film zinc oxide semiconductors: Application to electronic devices}." 514-516 (2006): 3-7. AbstractWebsite
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Fortunato, E., A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and R. Martins. "{Zinc oxide, a multifunctional material: from material to device applications}." Applied Physics A. 96 (2009): 197-205. AbstractWebsite
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Fortunato, Elvira M. C., Luís M. N. Pereira, Pedro M. C. Barquinha, Ana M. {Botelho do Rego}, Gonçalo Gonçalves, Anna Vilà, Juan R. Morante, and Rodrigo F. P. Martins. "{High mobility indium free amorphous oxide thin film transistors}." Applied Physics Letters. 92 (2008): 222103. AbstractWebsite
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Gaspar, D., S. N. Fernandes, G. dea Oliveira, J. G. Fernandes, P. Grey, R. V. Pontes, L. Pereira, R. Martins, M. H. Godinho, and E. Fortunato. "{Nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors.}." Nanotechnology. 25 (2014): 094008. AbstractWebsite

Cotton-based nanocrystalline cellulose (NCC), also known as nanopaper, one of the major sources of renewable materials, is a promising substrate and component for producing low cost fully recyclable flexible paper electronic devices and systems due to its properties (lightweight, stiffness, non-toxicity, transparency, low thermal expansion, gas impermeability and improved mechanical properties).Here, we have demonstrated for the first time a thin transparent nanopaper-based field effect transistor (FET) where NCC is simultaneously used as the substrate and as the gate dielectric layer in an 'interstrate' structure, since the device is built on both sides of the NCC films; while the active channel layer is based on oxide amorphous semiconductors, the gate electrode is based on a transparent conductive oxide.Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (>7 cm(2) V (-1) s(-1)), drain-source current on/off modulation ratio higher than 10(5), enhancement n-type operation and subthreshold gate voltage swing of 2.11 V/decade. The NCC film FET characteristics have been measured in air ambient conditions and present good stability, after two weeks of being processed, without any type of encapsulation or passivation layer. The results obtained are comparable to ones produced for conventional cellulose paper, marking this out as a promising approach for attaining high-performance disposable electronics such as paper displays, smart labels, smart packaging, RFID (radio-frequency identification) and point-of-care systems for self-analysis in bioscience applications, among others.

Gonçalves, Gonçalo, Valentina Grasso, Pedro Barquinha, Lu\'ıs Pereira, Elangovan Elamurugu, Mauro Brignone, Rodrigo Martins, Vito Lambertini, and Elvira Fortunato. "{Role of Room Temperature Sputtered High Conductive and High Transparent Indium Zinc Oxide Film Contacts on the Performance of Orange, Green, and Blue Organic Light Emitting Diodes}." Plasma Processes and Polymers. 8 (2011): 340-345. AbstractWebsite
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Gonçalves, G., E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato. "{Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films}." Thin Solid Films. 515 (2007): 8562-8566. AbstractWebsite
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Gonçalves, G., P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato. "{High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs}." Electrochemical and Solid-State Letters. 13 (2010): H20. AbstractWebsite
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Lopes, M. E., H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira. "{Gate-bias stress in amorphous oxide semiconductors thin-film transistors}." Applied Physics Letters. 95 (2009): 063502. AbstractWebsite
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Martins, Rodrigo, Pedro Barquinha, Luís Pereira, Nuno Correia, Gonçalo Gonçalves, Isabel Ferreira, and Elvira Fortunato. "{Write-erase and read paper memory transistor}." Applied Physics Letters. 93 (2008): 203501. AbstractWebsite
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Martins, R., P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferreira, and E. Fortunato. "{Electron transport and optical characteristics in amorphous indium zinc oxide films}." Journal of Non-Crystalline Solids. 352 (2006): 1471-1474. AbstractWebsite
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Martins, R., B. Brás, I. Ferreira, L. Pereira, P. Barquinha, N. Correia, R. Costa, T. Busani, A. Gonçalves, A. Pimentel, and E. Fortunato. "{Away from silicon era: the paper electronics}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 7940. 2011. 79400P–10. Abstract
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Martins, R., P. Barquinha, A. Pimentel, L. Pereira, E. Fortunato, D. Kang, I. Song, C. Kim, J. Park, and Y. Park. "{Electron transport in single and multicomponent n-type oxide semiconductors}." Thin Solid Films. 516 (2008): 1322-1325. AbstractWebsite
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Martins, Rodrigo, Arokia Nathan, Raquel Barros, Lu\'ıs Pereira, Pedro Barquinha, Nuno Correia, Ricardo Costa, Arman Ahnood, Isabel Ferreira, and Elvira Fortunato. "{Complementary metal oxide semiconductor technology with and on paper.}." Advanced materials (Deerfield Beach, Fla.). 23 (2011): 4491-6. AbstractWebsite
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Martins, R., N. Schell, R. Silva, L. Pereira, K. MAHESH, and F. FERNANDES. "{In-situ study of Ni–Ti thin film growth on a TiN intermediate layer by X-ray diffraction}." Sensors and Actuators B: Chemical. 126 (2007): 332-337. AbstractWebsite
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Martins, R. M. S., N. Schell, A. Mücklich, H. Reuther, M. Beckers, R. J. C. Silva, L. Pereira, and F. M. {Braz Fernandes}. "{Study of graded Ni-Ti shape memory alloy film growth on Si(100) substrate}." Applied Physics A. 91 (2008): 291-299. AbstractWebsite
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