<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pereira, L.</style></author><author><style face="normal" font="default" size="100%">Gaspar, D</style></author><author><style face="normal" font="default" size="100%">Guerin, D</style></author><author><style face="normal" font="default" size="100%">Delattre, a</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">{The influence of fibril composition and dimension on the performance of paper gated oxide transistors.}</style></title><secondary-title><style face="normal" font="default" size="100%">Nanotechnology</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">094007</style></keyword><keyword><style  face="normal" font="default" size="100%">25</style></keyword><keyword><style  face="normal" font="default" size="100%">available from stacks</style></keyword><keyword><style  face="normal" font="default" size="100%">in colour only in</style></keyword><keyword><style  face="normal" font="default" size="100%">iop</style></keyword><keyword><style  face="normal" font="default" size="100%">mmedia</style></keyword><keyword><style  face="normal" font="default" size="100%">nano</style></keyword><keyword><style  face="normal" font="default" size="100%">nanodielectrics</style></keyword><keyword><style  face="normal" font="default" size="100%">org</style></keyword><keyword><style  face="normal" font="default" size="100%">paper electronics</style></keyword><keyword><style  face="normal" font="default" size="100%">paper transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">s online supplementary data</style></keyword><keyword><style  face="normal" font="default" size="100%">some figures may appear</style></keyword><keyword><style  face="normal" font="default" size="100%">the online journal</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2014</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://www.ncbi.nlm.nih.gov/pubmed/24521999</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">9</style></number><volume><style face="normal" font="default" size="100%">25</style></volume><pages><style face="normal" font="default" size="100%">094007</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Paper electronics is a topic of great interest due the possibility of having low-cost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiber/nanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiber/nanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm(2) V(-1) s(-1), with an ION/IOFF ratio close to 10(5).&lt;/p&gt;
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