<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pereira, L.</style></author><author><style face="normal" font="default" size="100%">Marques, A.</style></author><author><style face="normal" font="default" size="100%">Águas, H.</style></author><author><style face="normal" font="default" size="100%">Nedev, N.</style></author><author><style face="normal" font="default" size="100%">Georgiev, S</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">{Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application}</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Science and Engineering: B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2004</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://apps.isiknowledge.com/full\_record.do?product=UA&amp;search\_mode=GeneralSearch&amp;qid=11&amp;SID=Z1nIo6NpO6CoGE2nDij&amp;page=3&amp;doc=101</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">1-3</style></number><volume><style face="normal" font="default" size="100%">109</style></volume><pages><style face="normal" font="default" size="100%">89–93</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">n/a</style></abstract><notes><style face="normal" font="default" size="100%">n/a</style></notes></record></records></xml>