@conference { ISI:000343809200022,
	title = {{Electronic structure of amorphous ZnO films}},
	booktitle = {{PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 9-10}},
	series = {{Physica Status Solidi C-Current Topics in Solid State Physics}},
	volume = {{11}},
	number = {{9-10}},
	year = {Submitted},
	note = {<p>{Fall Meeting Symposium on Novel Materials for Electronic, Optoelectronic, Photovoltaic and Energy Saving Applications (E-MRS), Warsaw, POLAND, SEP 16-20, 2013}</p>
},
	pages = {{1476-1480}},
	abstract = {<p>{We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy. (C) 2014 WILEY-VCH Verlag GmbH \&amp; Co. KGaA, Weinheim}</p>
},
	issn = {{1862-6351}},
	doi = {{10.1002/pssc.201400010}},
	author = {Schmeisser, Dieter and Haeberle, Joerg and Barquinha, Pedro and Gaspar, Diana and Pereira, Luis and Martins, Rodrigo and Fortunato, Elvira},
	editor = {{Godlewski, M and Zakrzewski, A}}
}
