Luís Miguel Nunes Pereira
DCM - Departamento de Ciência dos Materiais
(email)
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2001
Cabrita, A., L. Pereira, D. Brida, A. Lopes, A. Marques, I. Ferreira, E. Fortunato, and R. Martins.
"
{Silicon carbide photodiodes: Schottky and PINIP structures}
."
Applied Surface Science
. 184 (2001): 437-442.
Abstract
Website
n/a
2002
Fortunato, E, Brida, D, Pereira, and L.
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{Dependence of the strains and residual mechanical stresses on the performances presented by a-Si : H thin film position sensors}
." 4 (2002): 612-616.
Abstract
Website
n/a
Cabrita, A, Pereira, L, Brida, and D.
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{Role of the density of states in the colour selection of the collection spectrum of amorphous silicon-based Schottky photodiodes}
." 230-2 (2002): 559-562.
Abstract
Website
n/a
Aguas, H, Fortunato, E, Pereira, and L.
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{Role of the i-layer thickness in the performance of a-Si : H Schottky barrier photodiodes}
." 230-2 (2002): 587-590.
Abstract
Website
n/a
2003
Aguas, H, Pereira, L, Goullet, and A.
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{Correlation between the tunnelling oxide and I-V curves of MIS photodiodes}
." 762 (2003): 217-222.
Abstract
Website
n/a
Aguas, H, Raniero, L, and Pereira.
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{Polymorphous silicon films produced in large area reactors by PECVD at 27.12 MHz and 13.56 MHz}
." 762 (2003): 589-594.
Abstract
Website
n/a
Mauricio, RM, Pereira, LGR, Goncalves, and LC.
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{Potential of semi-automated in vitro gas production technique for sorghum silages evaluation}
." 32 (2003): 1013-1020.
Abstract
Website
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2004
Raniero, L, Aguas, H, and Pereira.
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{Batch processing method to deposit a-Si : H films by PECVD}
." 455-456 (2004): 104-107.
Abstract
Website
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Raniero, L, Pereira, Zhang, and SB.
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{Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques}
." 338 (2004): 206-210.
Abstract
Website
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Aguas, H, Pereira, L, Ferreira, and I.
"
{Effect of annealing on gold rectifying contacts in amorphous silicon}
." 455-456 (2004): 96-99.
Abstract
Website
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Raniero, L, Martins, R, Aguas, and H.
"
{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}
." 455-456 (2004): 532-535.
Abstract
Website
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Fortunato, E, Pimentel, A, Pereira, and L.
"
{High field-effect mobility zinc oxide thin film transistors produced at room temperature}
." 338 (2004): 806-809.
Abstract
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Aguas, H, Pereira, L, and Raniero.
"
{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}
." 455-456 (2004): 73-76.
Abstract
Website
n/a
Pereira, L, Aguas, H, and Raniero.
"
{Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition}
." 455-456 (2004): 112-115.
Abstract
Website
n/a
Silva, M. A. G., A, Raniero, L, Ferreira, and E.
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{Silicon etching in CF(4)/O(2) and SF(6) atmospheres}
." 455-456 (2004): 120-123.
Abstract
Website
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Pereira, L, Aguas, H, Igreja, and R.
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{Sputtering preparation of silicon nitride thin films for gate dielectric applications}
." 455-456 (2004): 69-72.
Abstract
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LGUAS, H.
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{Effect of the tunnelling oxide thickness and density on the performance of MIS photodiodes}
."
Thin Solid Films
. 451-452 (2004): 361-365.
Abstract
Website
n/a
2005
Zhang, S, Raniero, L, Fortunato, and E.
"
{Amorphous silicon based p-i-i-n structure for color sensor}
." 862 (2005): 679-683.
Abstract
Website
n/a
Aguas, H, Pereira, L, and Raniero.
"
{Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors}
." 862 (2005): 691-696.
Abstract
Website
n/a
Raniero, L, Goncalves, A, and Pimentel.
"
{Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides}
." 862 (2005): 543-548.
Abstract
Website
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Pereira, L, Beckers, M, Martins, and RMS.
"
{Optimization of the metal/silicon ratio on nickel assisted crystallization of amorphous silicon}
." 869 (2005): 45-50.
Abstract
Website
n/a
2006
Pereira, L, Barquinha, P, Fortunato, and E.
"
{Electrical performances of low temperature annealed hafnium oxide deposited at room temperature}
." 514-516 (2006): 58-62.
Abstract
Website
n/a
Fortunato, E., Barquinha, P., Pereira, and L.
"
{Multicomponent wide band gap oxide semiconductors for thin film transistors}
." (2006): 605-608.
Abstract
Website
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Pereira, L, Barquinha, P, Fortunato, and E.
"
{Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization}
." 514-516 (2006): 28-32.
Abstract
Website
n/a
2007
Fortunato, Elvira, Barquinha, Pedro, Pereira, and Luis.
"
{Advanced materials for the next generation of thin film transistors}
." (2007): 371-373.
Abstract
Website
n/a
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