Publications

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Pereira, L, Aguas, H, Igreja, and R. "{Sputtering preparation of silicon nitride thin films for gate dielectric applications}." 455-456 (2004): 69-72. AbstractWebsite
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Silva, M. A. G., A, Raniero, L, Ferreira, and E. "{Silicon etching in CF(4)/O(2) and SF(6) atmospheres}." 455-456 (2004): 120-123. AbstractWebsite
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Cabrita, A., L. Pereira, D. Brida, A. Lopes, A. Marques, I. Ferreira, E. Fortunato, and R. Martins. "{Silicon carbide photodiodes: Schottky and PINIP structures}." Applied Surface Science. 184 (2001): 437-442. AbstractWebsite
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Aguas, Hugo, Pereira, Luis, Costa, and Daniel. "{Role of the oxide layer on the performances of a-Si : H schottky structures applied to PDS fabrication}." 910 (2007): 415-420. AbstractWebsite
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Aguas, H, Fortunato, E, Pereira, and L. "{Role of the i-layer thickness in the performance of a-Si : H Schottky barrier photodiodes}." 230-2 (2002): 587-590. AbstractWebsite
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Cabrita, A, Pereira, L, Brida, and D. "{Role of the density of states in the colour selection of the collection spectrum of amorphous silicon-based Schottky photodiodes}." 230-2 (2002): 559-562. AbstractWebsite
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Pereira, L, Aguas, H, and Raniero. "{Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition}." 455-456 (2004): 112-115. AbstractWebsite
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Gonçalves, Gonçalo, Valentina Grasso, Pedro Barquinha, Lu\'ıs Pereira, Elangovan Elamurugu, Mauro Brignone, Rodrigo Martins, Vito Lambertini, and Elvira Fortunato. "{Role of Room Temperature Sputtered High Conductive and High Transparent Indium Zinc Oxide Film Contacts on the Performance of Orange, Green, and Blue Organic Light Emitting Diodes}." Plasma Processes and Polymers. 8 (2011): 340-345. AbstractWebsite
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Mauricio, RM, Pereira, LGR, Goncalves, and LC. "{Potential of semi-automated in vitro gas production technique for sorghum silages evaluation}." 32 (2003): 1013-1020. AbstractWebsite
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Aguas, H, Raniero, L, and Pereira. "{Polymorphous silicon films produced in large area reactors by PECVD at 27.12 MHz and 13.56 MHz}." 762 (2003): 589-594. AbstractWebsite
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Pereira, L, Barquinha, P, Fortunato, and E. "{Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization}." 514-516 (2006): 28-32. AbstractWebsite
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Martins, R., V. Figueiredo, R. Barros, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and E. Fortunato. "{P-type oxide-based thin film transistors produced at low temperatures}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826315–15. Abstract
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Pereira, L, Beckers, M, Martins, and RMS. "{Optimization of the metal/silicon ratio on nickel assisted crystallization of amorphous silicon}." 869 (2005): 45-50. AbstractWebsite
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Prabakaran, R., Aguas, H., Pereira, and L. "{Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique}." 587-588 (2008): 308-312. AbstractWebsite
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Fortunato, E., Barquinha, P., Pereira, and L. "{Multicomponent wide band gap oxide semiconductors for thin film transistors}." (2006): 605-608. AbstractWebsite
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Pereira, Lu\'ıs, Pedro Barquinha, Gonçalo Gonçalves, Elvira Fortunato, and Rodrigo Martins. "{Multicomponent dielectrics for oxide TFT}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826316–16. Abstract
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Aguas, H, Pereira, L, and Raniero. "{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}." 455-456 (2004): 73-76. AbstractWebsite
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Pereira, L., Barquinha, P., Fortunato, and E. "{Low temperature high k dielectric on poly-Si TFTs}." 354 (2008): 2534-2537. AbstractWebsite
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Raniero, L, Goncalves, A, and Pimentel. "{Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides}." 862 (2005): 543-548. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, R. Martins, D. Kang, C. J. Kim, H. Lim, I. Song, and Y. Park. "{High k dielectrics for low temperature electronics}." Thin Solid Films. 516 (2008): 1544-1548. AbstractWebsite
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Fortunato, E, Pimentel, A, Pereira, and L. "{High field-effect mobility zinc oxide thin film transistors produced at room temperature}." 338 (2004): 806-809. AbstractWebsite
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Raniero, L, Martins, R, Aguas, and H. "{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}." 455-456 (2004): 532-535. AbstractWebsite
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Lopes, M. E., H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira. "{Gate-bias stress in amorphous oxide semiconductors thin-film transistors}." Applied Physics Letters. 95 (2009): 063502. AbstractWebsite
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Pereira, L, Barquinha, P, Fortunato, and E. "{Electrical performances of low temperature annealed hafnium oxide deposited at room temperature}." 514-516 (2006): 58-62. AbstractWebsite
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LGUAS, H. "{Effect of the tunnelling oxide thickness and density on the performance of MIS photodiodes}." Thin Solid Films. 451-452 (2004): 361-365. AbstractWebsite
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