Publications

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Martins, R., B. Brás, I. Ferreira, L. Pereira, P. Barquinha, N. Correia, R. Costa, T. Busani, A. Gonçalves, A. Pimentel, and E. Fortunato. "{Away from silicon era: the paper electronics}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 7940. 2011. 79400P–10. Abstract
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Martins, R., L. Pereira, P. Barquinha, N. Correia, G. Gonçalves, I. Ferreira, C. Dias, and E. Fortunato. "{Floating gate memory paper transistor}." Eds. Ferechteh H. Teherani, David C. Look, Cole W. Litton, and David J. Rogers. Vol. 7603. 2010. 760314–11. Abstract
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Fortunato, E., Nuno Correia, Pedro Barquinha, Cláudia Costa, Lu\'ıs Pereira, Gonçalo Gonçalves, and Rodrigo Martins. "{Paper field effect transistor}." Eds. Ferechteh H. Teherani, Cole W. Litton, and David J. Rogers. Vol. 7217. 2009. 72170K–11. Abstract
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Martins, R., Luisa Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. GONCALVES, A. Goncalves, and E. Fortunato. "{Zinc oxide and related compounds: order within the disorder}." Eds. Ferechteh H. Teherani, Cole W. Litton, and David J. Rogers. Vol. 7217. 2009. 72170B–13. Abstract
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Fortunato, Elvira, Barquinha, Pedro, Pereira, and Luis. "{Advanced materials for the next generation of thin film transistors}." (2007): 371-373. AbstractWebsite
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Zhang, S, Raniero, L, Fortunato, and E. "{Amorphous silicon based p-i-i-n structure for color sensor}." 862 (2005): 679-683. AbstractWebsite
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Raniero, L, Aguas, H, and Pereira. "{Batch processing method to deposit a-Si : H films by PECVD}." 455-456 (2004): 104-107. AbstractWebsite
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Pereira, Luis, Aguas, Hugo, Beckers, and Manfred. "{Characterization of nickel induced crystallized silicon by spectroscopic ellipsornetry}." 910 (2007): 529-534. AbstractWebsite
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Aguas, H, Pereira, L, Goullet, and A. "{Correlation between the tunnelling oxide and I-V curves of MIS photodiodes}." 762 (2003): 217-222. AbstractWebsite
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Aguas, H, Pereira, L, Ferreira, and I. "{Effect of annealing on gold rectifying contacts in amorphous silicon}." 455-456 (2004): 96-99. AbstractWebsite
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Lopes, M. E., H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira. "{Gate-bias stress in amorphous oxide semiconductors thin-film transistors}." Applied Physics Letters. 95 (2009): 063502. AbstractWebsite
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Raniero, L, Martins, R, Aguas, and H. "{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}." 455-456 (2004): 532-535. AbstractWebsite
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Fortunato, E, Pimentel, A, Pereira, and L. "{High field-effect mobility zinc oxide thin film transistors produced at room temperature}." 338 (2004): 806-809. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, R. Martins, D. Kang, C. J. Kim, H. Lim, I. Song, and Y. Park. "{High k dielectrics for low temperature electronics}." Thin Solid Films. 516 (2008): 1544-1548. AbstractWebsite
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Pereira, L., Barquinha, P., Fortunato, and E. "{Low temperature high k dielectric on poly-Si TFTs}." 354 (2008): 2534-2537. AbstractWebsite
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Pereira, Lu\'ıs, Pedro Barquinha, Gonçalo Gonçalves, Elvira Fortunato, and Rodrigo Martins. "{Multicomponent dielectrics for oxide TFT}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826316–16. Abstract
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Fortunato, E., Barquinha, P., Pereira, and L. "{Multicomponent wide band gap oxide semiconductors for thin film transistors}." (2006): 605-608. AbstractWebsite
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