Publications

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Journal Article
Barquinha, P., Fortunato, E., Goncalves, and A. "{A study on the electrical properties of ZnO based transparent TFTs}." 514-516 (2006): 68-72. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins. "{Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs}." physica status solidi (RRL) – Rapid Research Letters. 1 (2007): R34-R36. AbstractWebsite
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Zanarini, Simone, Nadia Garino, Jijeesh Ravi Nair, Carlotta Francia, Pawel Jerzy Wojcik, Luis Pereira, Elvira Fortunato, Rodrigo Martins, Silvia Bodoardo, and Nerino Penazzi. "{Contrast Enhancement in Polymeric Electrochromic Devices Encompassing Room Temperature Ionic Liquids}." {INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE}. {9} (Submitted): {1650-1662}. Abstract

{We report the preparation and spectro-electrochemical characterization of electrochromic devices (ECD) combining inkjet-printed WO3 as cathode and electro-deposited V2O5 as anode. ECD were prepared for the first time with an optimized formulation of gel polymer electrolyte based on Bisphenol A ethoxylate dimethacrylate and Poly(ethylene glycol) methyl ether methacrylate (BEMA/PEGMA) encompassing the Room Temperature Ionic Liquid (RTIL, 1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) as solvent. The UV-VIS spectrum of ECD was recorded at different potentials during Li+ insertion and de-insertion; additionally the Percent Trasmittance (T%) of ECD vs. time was investigated during repeated bleaching and coloring cycles allowing thus the estimation of switching times and device stability. Due to the lower ionic conductivity and the apparent superior solvent permeability within WO3 active layer, RTIL containing ECD showed slower switching times, but higher contrast with respect to the similar ones with EC/DEC as solvent. These results indicate that the ECD containing environment-friendly RTIL electrolytes are suitable for applications requiring high contrast, high safety and moderately fast switching times.}

Aguas, H, Pereira, L, Goullet, and A. "{Correlation between the tunnelling oxide and I-V curves of MIS photodiodes}." 762 (2003): 217-222. AbstractWebsite
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Nandy, Suman, Gonçalo Gonçalves, Joana Vaz Pinto, Tito Busani, Vitor Figueiredo, Lu\'ıs Pereira, Rodrigo Ferrão {Paiva Martins}, and Elvira Fortunato. "{Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars.}." Nanoscale. 5 (2013): 11699-709. AbstractWebsite

The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.

Barquinha, P., G. Gonçalves, L. Pereira, R. Martins, and E. Fortunato. "{Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs}." Thin Solid Films. 515 (2007): 8450-8454. AbstractWebsite
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Figueiredo, V., E. Elangovan, G. Gonçalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato. "{Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper}." Applied Surface Science. 254 (2008): 3949-3954. AbstractWebsite
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Pereira, Sónia, Alexandra Gonçalves, Nuno Correia, Joana Pinto, Lu\'ıs Pereira, Rodrigo Martins, and Elvira Fortunato. "{Electrochromic behavior of NiO thin films deposited by e-beam evaporation at room temperature}." Solar Energy Materials and Solar Cells. 120 (2014): 109-115. AbstractWebsite
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Fortunato, E. M. C., P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gon�alves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins. "{Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature}." Advanced Materials. 17 (2005): 590-594. AbstractWebsite
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Fortunato, E, Goncalves, A, and Marques. "{Gallium zinc oxide coated polymeric substrates for optoelectronic applications}." 769 (2003): 291-296. AbstractWebsite
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Barquinha, Pedro, Anna M. Vila, Gon\c{C}alo Gon\c{C}alves, LuÍs Pereira, Rodrigo Martins, Joan R. Morante, and Elvira Fortunato. "{Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material}." IEEE Transactions on Electron Devices. 55 (2008): 954-960. AbstractWebsite
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Lopes, M. E., H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira. "{Gate-bias stress in amorphous oxide semiconductors thin-film transistors}." Applied Physics Letters. 95 (2009): 063502. AbstractWebsite
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Gonçalves, G., P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato. "{High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs}." Electrochemical and Solid-State Letters. 13 (2010): H20. AbstractWebsite
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Fortunato, E., P. Barquinha, G. Gonçalves, L. Pereira, and R. Martins. "{High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors}." Solid-State Electronics. 52 (2008): 443-448. AbstractWebsite
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Fortunato, Elvira M. C., Luís M. N. Pereira, Pedro M. C. Barquinha, Ana M. {Botelho do Rego}, Gonçalo Gonçalves, Anna Vilà, Juan R. Morante, and Rodrigo F. P. Martins. "{High mobility indium free amorphous oxide thin film transistors}." Applied Physics Letters. 92 (2008): 222103. AbstractWebsite
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Fortunato, E., V. Assunção, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{High quality conductive gallium-doped zinc oxide films deposited at room temperature}." Thin Solid Films. 451-452 (2004): 443-447. AbstractWebsite
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Fortunato, Elvira, Nuno Correia, Pedro Barquinha, LuÍs Pereira, Gon\c{C}alo Goncalves, and Rodrigo Martins. "{High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper}." IEEE Electron Device Letters. 29 (2008): 988-990. AbstractWebsite
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Fortunato, E., L. Raniero, L. Silva, A. Goncalves, A. Pimentel, P. Barquinha, H. Aguas, L. Pereira, G. GONCALVES, and I. Ferreira. "{Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications}." Solar Energy Materials and Solar Cells. 92 (2008): 1605-1610. AbstractWebsite
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Gonçalves, G., E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato. "{Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films}." Thin Solid Films. 515 (2007): 8562-8566. AbstractWebsite
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Barquinha, P., E. Fortunato, A. Gonçalves, A. Pimentel, A. Marques, L. Pereira, and R. Martins. "{Influence of time, light and temperature on the electrical properties of zinc oxide TFTs}." Superlattices and Microstructures. 39 (2006): 319-327. AbstractWebsite
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Olziersky, Antonis, Pedro Barquinha, Anna Vilà, Luís Pereira, Gonçalo Gonçalves, Elvira Fortunato, Rodrigo Martins, and Juan R. Morante. "{Insight on the SU-8 resist as passivation layer for transparent Ga[sub 2]O[sub 3]–In[sub 2]O[sub 3]–ZnO thin-film transistors}." Journal of Applied Physics. 108 (2010): 064505. AbstractWebsite
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Barquinha, Pedro, Luis Pereira, Gonçalo Gonçalves, Danjela Kuscer, Marija Kosec, Anna Vilà, Antonis Olziersky, Juan Ramon Morante, Rodrigo Martins, and Elvira Fortunato. "{Low-temperature sputtered mixtures of high-$ąppa$ and high bandgap dielectrics for GIZO TFTs}." Journal of the Society for Information Display. 18 (2010): 762. AbstractWebsite
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Fortunato, E., Goncalves, A., and Marques. "{Multifunctional thin film zinc oxide semiconductors: Application to electronic devices}." 514-516 (2006): 3-7. AbstractWebsite
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Gaspar, D., S. N. Fernandes, G. dea Oliveira, J. G. Fernandes, P. Grey, R. V. Pontes, L. Pereira, R. Martins, M. H. Godinho, and E. Fortunato. "{Nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors.}." Nanotechnology. 25 (2014): 094008. AbstractWebsite

Cotton-based nanocrystalline cellulose (NCC), also known as nanopaper, one of the major sources of renewable materials, is a promising substrate and component for producing low cost fully recyclable flexible paper electronic devices and systems due to its properties (lightweight, stiffness, non-toxicity, transparency, low thermal expansion, gas impermeability and improved mechanical properties).Here, we have demonstrated for the first time a thin transparent nanopaper-based field effect transistor (FET) where NCC is simultaneously used as the substrate and as the gate dielectric layer in an 'interstrate' structure, since the device is built on both sides of the NCC films; while the active channel layer is based on oxide amorphous semiconductors, the gate electrode is based on a transparent conductive oxide.Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (>7 cm(2) V (-1) s(-1)), drain-source current on/off modulation ratio higher than 10(5), enhancement n-type operation and subthreshold gate voltage swing of 2.11 V/decade. The NCC film FET characteristics have been measured in air ambient conditions and present good stability, after two weeks of being processed, without any type of encapsulation or passivation layer. The results obtained are comparable to ones produced for conventional cellulose paper, marking this out as a promising approach for attaining high-performance disposable electronics such as paper displays, smart labels, smart packaging, RFID (radio-frequency identification) and point-of-care systems for self-analysis in bioscience applications, among others.