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Fortunato, E., A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and R. Martins. "{Zinc oxide, a multifunctional material: from material to device applications}." Applied Physics A. 96 (2009): 197-205. AbstractWebsite
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Martins, Rodrigo, Pedro Barquinha, Luís Pereira, Nuno Correia, Gonçalo Gonçalves, Isabel Ferreira, and Elvira Fortunato. "{Write-erase and read paper memory transistor}." Applied Physics Letters. 93 (2008): 203501. AbstractWebsite
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Fortunato, Elvira M. C., Pedro M. C. Barquinha, Ana C. M. B. G. Pimentel, Alexandra M. F. Gonçalves, António J. S. Marques, Rodrigo F. P. Martins, and Luis M. N. Pereira. "{Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature}." Applied Physics Letters. 85 (2004): 2541. AbstractWebsite
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Barquinha, P., L. Pereira, G. Gonçalves, R. Martins, and E. Fortunato. "{Toward High-Performance Amorphous GIZO TFTs}." Journal of The Electrochemical Society. 156 (2009): H161. AbstractWebsite
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Barquinha, P., A. Vilà, G. Gonçalves, L. Pereira, R. Martins, J. Morante, and E. Fortunato. "{The role of source and drain material in the performance of GIZO based thin-film transistors}." physica status solidi (a). 205 (2008): 1905-1909. AbstractWebsite
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Pereira, L., D. Gaspar, D. Guerin, a Delattre, E. Fortunato, and R. Martins. "{The influence of fibril composition and dimension on the performance of paper gated oxide transistors.}." Nanotechnology. 25 (2014): 094007. AbstractWebsite

Paper electronics is a topic of great interest due the possibility of having low-cost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiber/nanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiber/nanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm(2) V(-1) s(-1), with an ION/IOFF ratio close to 10(5).

Martins, R. M. S., F. M. {Braz Fernandes}, R. J. C. Silva, L. Pereira, P. R. Gordo, M. J. P. Maneira, M. Beckers, A. Mücklich, and N. Schell. "{The influence of a poly-Si intermediate layer on the crystallization behaviour of Ni-Ti SMA magnetron sputtered thin films}." Applied Physics A. 83 (2006): 139-145. AbstractWebsite
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Barquinha, P., L. Pereira, G. Gonçalves, R. Martins, and E. Fortunato. "{The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs}." Electrochemical and Solid-State Letters. 11 (2008): H248. AbstractWebsite
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Pereira, Lu\'ıs, Pedro Barquinha, Gonçalo Gonçalves, Anna Vilà, Antonis Olziersky, Joan Morante, Elvira Fortunato, and Rodrigo Martins. "{Sputtered multicomponent amorphous dielectrics for transparent electronics}." physica status solidi (a). 206 (2009): 2149-2154. AbstractWebsite
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Martins, Rodrigo, P. Barquinha, L. Pereira, N. Correia, G. Gonçalves, I. Ferreira, and E. Fortunato. "{Selective floating gate non-volatile paper memory transistor}." physica status solidi (RRL) - Rapid Research Letters. 3 (2009): 308-310. AbstractWebsite
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Pei, Z. L., L. Pereira, G. Gonçalves, P. Barquinha, N. Franco, E. Alves, A. M. B. Rego, R. Martins, and E. Fortunato. "{Room-Temperature Cosputtered HfO[sub 2]–Al[sub 2]O[sub 3] Multicomponent Gate Dielectrics}." Electrochemical and Solid-State Letters. 12 (2009): G65. AbstractWebsite
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Gonçalves, Gonçalo, Valentina Grasso, Pedro Barquinha, Lu\'ıs Pereira, Elangovan Elamurugu, Mauro Brignone, Rodrigo Martins, Vito Lambertini, and Elvira Fortunato. "{Role of Room Temperature Sputtered High Conductive and High Transparent Indium Zinc Oxide Film Contacts on the Performance of Orange, Green, and Blue Organic Light Emitting Diodes}." Plasma Processes and Polymers. 8 (2011): 340-345. AbstractWebsite
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Martins, R., P. Barquinha, I. Ferreira, L. Pereira, G. Gonçalves, and E. Fortunato. "{Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors}." Journal of Applied Physics. 101 (2007): 044505. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, L. Pereira, and R. Martins. "{Recent advances in ZnO transparent thin film transistors}." Thin Solid Films. 487 (2005): 205-211. AbstractWebsite
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Mauricio, RM, Pereira, LGR, Goncalves, and LC. "{Potential of semi-automated in vitro gas production technique for sorghum silages evaluation}." 32 (2003): 1013-1020. AbstractWebsite
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Bernardo, Gabriel, Gonçalo Gonçalves, Pedro Barquinha, Quirina Ferreira, Graça Brotas, Lu\'ıs Pereira, Ana Charas, Jorge Morgado, Rodrigo Martins, and Elvira Fortunato. "{Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature}." Synthetic Metals. 159 (2009): 1112-1115. AbstractWebsite
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Pimentel, A., E. Fortunato, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, and R. Martins. "{Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices}." Thin Solid Films. 487 (2005): 212-215. AbstractWebsite
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Parthiban, Shanmugam, Elamurugu Elangovan, Pradipta K. Nayak, Alexandra Gonçalves, Daniela Nunes, Lu\'ıs Pereira, Pedro Barquinha, Tito Busani, Elvira Fortunato, and Rodrigo Martins. "{Performances of Microcrystalline Zinc Tin Oxide Thin-Film Transistors Processed by Spray Pyrolysis}." 9 (2013): 825-831. Abstract
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Pereira, L., A. Marques, H. Águas, N. Nedev, S. Georgiev, E. Fortunato, and R. Martins. "{Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application}." Materials Science and Engineering: B. 109 (2004): 89-93. AbstractWebsite
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Barquinha, P., L. Pereira, G. Gonçalves, R. Martins, D. Kuščer, M. Kosec, and E. Fortunato. "{Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics}." Journal of The Electrochemical Society. 156 (2009): H824. AbstractWebsite
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Martins, R., V. Figueiredo, R. Barros, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and E. Fortunato. "{P-type oxide-based thin film transistors produced at low temperatures}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826315–15. Abstract
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Fortunato, E., L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Gonçalves, A. Gonçalves, and R. Martins. "{Oxide semiconductors: Order within the disorder}." Philosophical Magazine. 89 (2009): 2741-2758. AbstractWebsite
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Fortunato, E., A. Gonçalves, A. Marques, A. Viana, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering}." Surface and Coatings Technology. 180-181 (2004): 20-25. AbstractWebsite
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Fortunato, Elvira, Barquinha, Pedro, Goncalves, and Goncalo. "{New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)}." 587-588 (2008): 348-352. AbstractWebsite
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Pereira, L., H. Águas, L. Gomes, P. Barquinha, E. Fortunato, and R. Martins. "{Nanostructured Silicon Based Thin Film Transistors Processed in the Plasma Dark Region}." Journal of Nanoscience and Nanotechnology. 10 (2010): 2938-2943. AbstractWebsite
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