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Gaspar, D., S. N. Fernandes, G. dea Oliveira, J. G. Fernandes, P. Grey, R. V. Pontes, L. Pereira, R. Martins, M. H. Godinho, and E. Fortunato. "{Nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors.}." Nanotechnology. 25 (2014): 094008. AbstractWebsite

Cotton-based nanocrystalline cellulose (NCC), also known as nanopaper, one of the major sources of renewable materials, is a promising substrate and component for producing low cost fully recyclable flexible paper electronic devices and systems due to its properties (lightweight, stiffness, non-toxicity, transparency, low thermal expansion, gas impermeability and improved mechanical properties).Here, we have demonstrated for the first time a thin transparent nanopaper-based field effect transistor (FET) where NCC is simultaneously used as the substrate and as the gate dielectric layer in an 'interstrate' structure, since the device is built on both sides of the NCC films; while the active channel layer is based on oxide amorphous semiconductors, the gate electrode is based on a transparent conductive oxide.Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (>7 cm(2) V (-1) s(-1)), drain-source current on/off modulation ratio higher than 10(5), enhancement n-type operation and subthreshold gate voltage swing of 2.11 V/decade. The NCC film FET characteristics have been measured in air ambient conditions and present good stability, after two weeks of being processed, without any type of encapsulation or passivation layer. The results obtained are comparable to ones produced for conventional cellulose paper, marking this out as a promising approach for attaining high-performance disposable electronics such as paper displays, smart labels, smart packaging, RFID (radio-frequency identification) and point-of-care systems for self-analysis in bioscience applications, among others.

Gonçalves, G., E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato. "{Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films}." Thin Solid Films. 515 (2007): 8562-8566. AbstractWebsite
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Gonçalves, Gonçalo, Valentina Grasso, Pedro Barquinha, Lu\'ıs Pereira, Elangovan Elamurugu, Mauro Brignone, Rodrigo Martins, Vito Lambertini, and Elvira Fortunato. "{Role of Room Temperature Sputtered High Conductive and High Transparent Indium Zinc Oxide Film Contacts on the Performance of Orange, Green, and Blue Organic Light Emitting Diodes}." Plasma Processes and Polymers. 8 (2011): 340-345. AbstractWebsite
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Gonçalves, G., P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato. "{High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs}." Electrochemical and Solid-State Letters. 13 (2010): H20. AbstractWebsite
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