Publications

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Ferreira, I. "{Properties of a-Si:H intrinsic films produced by HWPA-CVD technique}." Thin Solid Films. 451-452 (2004): 366-369. AbstractWebsite
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Ferreira, Isabel, Elvira Fortunato, Luı́s Pereira, M.Elisabete V. Costa, and Rodrigo Martins. "{The properties of a-Si:H films deposited on Mylar substrates by hot-wire plasma assisted technique}." Journal of Non-Crystalline Solids. 299-302 (2002): 30-35. AbstractWebsite
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Ferreira, I., M. E. V. Costa, L. Pereira, E. Fortunato, R. Martins, A. R. Ramos, and M. F. Silva. "{Silicon carbide alloys produced by hot wire, hot wire plasma-assisted and plasma-enhanced CVD techniques}." Applied Surface Science. 184 (2001): 8-19. AbstractWebsite
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Figueiredo, V., E. Elangovan, G. Gonçalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato. "{Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper}." Applied Surface Science. 254 (2008): 3949-3954. AbstractWebsite
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Fortunato, E., A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and R. Martins. "{Zinc oxide, a multifunctional material: from material to device applications}." Applied Physics A. 96 (2009): 197-205. AbstractWebsite
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Fortunato, E, Goncalves, A, and Marques. "{Gallium zinc oxide coated polymeric substrates for optoelectronic applications}." 769 (2003): 291-296. AbstractWebsite
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Fortunato, Elvira M. C., Pedro M. C. Barquinha, Ana C. M. B. G. Pimentel, Alexandra M. F. Gonçalves, António J. S. Marques, Rodrigo F. P. Martins, and Luis M. N. Pereira. "{Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature}." Applied Physics Letters. 85 (2004): 2541. AbstractWebsite
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Fortunato, E. "{Surface modification of a new flexible substrate based on hydroxypropylcellulose for optoelectronic applications}." Thin Solid Films. 442 (2003): 127-131. AbstractWebsite
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Fortunato, E. M. C., P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gon�alves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins. "{Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature}." Advanced Materials. 17 (2005): 590-594. AbstractWebsite
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Fortunato, E, Assuncao, V, Marques, and A. "{ZnO : Ga thin films produced by RF sputtering at room temperature: Effect of the power density}." 455-456 (2004): 12-15. AbstractWebsite
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Fortunato, E., P. Barquinha, G. Gonçalves, L. Pereira, and R. Martins. "{High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors}." Solid-State Electronics. 52 (2008): 443-448. AbstractWebsite
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Fortunato, E., Barquinha, P., Pereira, and L. "{Multicomponent wide band gap oxide semiconductors for thin film transistors}." (2006): 605-608. AbstractWebsite
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Fortunato, Elvira, Nuno Correia, Pedro Barquinha, LuÍs Pereira, Gon\c{C}alo Goncalves, and Rodrigo Martins. "{High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper}." IEEE Electron Device Letters. 29 (2008): 988-990. AbstractWebsite
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Fortunato, E., L. Raniero, L. Silva, A. Goncalves, A. Pimentel, P. Barquinha, H. Aguas, L. Pereira, G. GONCALVES, and I. Ferreira. "{Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications}." Solar Energy Materials and Solar Cells. 92 (2008): 1605-1610. AbstractWebsite
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Fortunato, E, Pimentel, A, Pereira, and L. "{High field-effect mobility zinc oxide thin film transistors produced at room temperature}." 338 (2004): 806-809. AbstractWebsite
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Fortunato, E, Assuncao, V, Marques, and A. "{Characterization of transparent and conductive ZnO : Ga thin films produced by rf sputtering at room temperature}." 763 (2003): 225-230. AbstractWebsite
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Fortunato, E, Barquinha, P, Pimentel, and A. "{Zinc oxide thin-film transistors}." 194 (2005): 225-238. AbstractWebsite
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Fortunato, E, Barquinha, P, Pimentel, and A. "{Next generation of thin film transistors based on zinc oxide}." 811 (2004): 347-352. AbstractWebsite
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Fortunato, Elvira, Barquinha, Pedro, Goncalves, and Goncalo. "{New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)}." 587-588 (2008): 348-352. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, L. Pereira, and R. Martins. "{Recent advances in ZnO transparent thin film transistors}." Thin Solid Films. 487 (2005): 205-211. AbstractWebsite
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Fortunato, Elvira M. C., Luís M. N. Pereira, Pedro M. C. Barquinha, Ana M. {Botelho do Rego}, Gonçalo Gonçalves, Anna Vilà, Juan R. Morante, and Rodrigo F. P. Martins. "{High mobility indium free amorphous oxide thin film transistors}." Applied Physics Letters. 92 (2008): 222103. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins. "{Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs}." physica status solidi (RRL) – Rapid Research Letters. 1 (2007): R34-R36. AbstractWebsite
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Fortunato, E., L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Gonçalves, A. Gonçalves, and R. Martins. "{Oxide semiconductors: Order within the disorder}." Philosophical Magazine. 89 (2009): 2741-2758. AbstractWebsite
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Fortunato, Elvira, Barquinha, Pedro, Pereira, and Luis. "{Advanced materials for the next generation of thin film transistors}." (2007): 371-373. AbstractWebsite
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Fortunato, E, Brida, D, Pereira, and L. "{Dependence of the strains and residual mechanical stresses on the performances presented by a-Si : H thin film position sensors}." 4 (2002): 612-616. AbstractWebsite
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