<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">J. P. Marques</style></author><author><style face="normal" font="default" size="100%">P. Indelicato</style></author><author><style face="normal" font="default" size="100%">F. Parente</style></author><author><style face="normal" font="default" size="100%">Sampaio, J M</style></author><author><style face="normal" font="default" size="100%">J P Santos</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Ground-state Landé &amp;lt;span class=&amp;quot;aps-inline-formula&amp;quot;&amp;gt;&amp;lt;math xmlns=&amp;quot;http://www.w3.org/1998/Math/MathML&amp;quot;&amp;gt;&amp;lt;mi&amp;gt;g&amp;lt;/mi&amp;gt;&amp;lt;/math&amp;gt;&amp;lt;/span&amp;gt; factors for selected ions along the boron isoelectronic sequence</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review A</style></secondary-title><short-title><style face="normal" font="default" size="100%">JPS_Articles</style></short-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Oct 04</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://link.aps.org/doi/10.1103/PhysRevA.94.042504</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">4</style></number><publisher><style face="normal" font="default" size="100%">American Physical Society</style></publisher><volume><style face="normal" font="default" size="100%">94</style></volume><pages><style face="normal" font="default" size="100%">042504</style></pages><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Land\&amp;apos;e $g$ factors for the fine-structure $1{s}^{2}2{s}^{2}2p\phantom{\rule{0.16em}{0ex}}^{2}P_{1/2}$ and $^{2}P_{3/2}$ levels in the boron isoelectronic sequence for selected $Z$ values have been calculated using the multiconfiguration Dirac-Fock method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wave function. The results are compared with the available theoretical data, showing a very good agreement.&lt;/p&gt;
</style></abstract><accession-num><style face="normal" font="default" size="100%">19B5DED7-4CD3-49DA-8C6D-3FDC8B39E95E</style></accession-num><notes><style face="normal" font="default" size="100%">n/a</style></notes><custom3><style face="normal" font="default" size="100%">papers3://publication/uuid/BA904C44-4027-4587-9C7A-BDD6826C8FE6</style></custom3><label><style face="normal" font="default" size="100%">r17712</style></label></record></records></xml>