@article {Oliveira2016430, title = {A path to renewable Mg reduction from MgO by a continuous-wave Cr:Nd:YAG ceramic solar laser}, journal = {Solar Energy Materials and Solar Cells}, volume = {155}, year = {2016}, note = {

cited By 0

}, pages = {430-435}, abstract = {

The first successful ablation of magnesium oxide through a home-made continuous-wave Cr:Nd:YAG ceramic solar laser is reported. A stationary heliostat-parabolic mirror solar energy collection and concentration system was used. A stable continuous-wave laser output power of 19.2 W was attained with laser beam brightness figure of merit 7.6 times higher than that of the previous scheme, enabling therefore the direct ablation of pure magnesium by our solar-pumped laser with only 1.6 m2 effective collection area. This could be an important step towards renewable magnesium production, offering multiple advantages, such as reducing agent avoidance, in relation to that of the previous Fresnel lens Cr:Nd:YAG continuous-wave solar laser system. {\textcopyright} 2016 Elsevier B.V.

}, doi = {10.1016/j.solmat.2016.06.046}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978107440\&partnerID=40\&md5=ddcf3b028515208d878b25cc495f0b62}, author = {Oliveira, M.a , Liang, D.a , Almeida, J.a , Vistas, C.R.a , Gon{\c c}alves, F.a , Martins, R.b} } @article {Nunes2016262, title = {Photocatalytic behavior of TiO2 films synthesized by microwave irradiation}, journal = {Catalysis Today}, volume = {278}, year = {2016}, note = {

cited By 0

}, pages = {262-270}, abstract = {

Titanium dioxide was synthesized on glass substrates from titanium (IV)isopropoxide and hydrochloride acid aqueous solutions through microwave irradiation using as seed layer either fluorine-doped crystalline tin oxide (SnO2:F) or amorphous tin oxide (a-SnOx). Three routes have been followed with distinct outcome: (i) equimolar hydrochloride acid/water proportions (1HCl:1water) resulted in nanorod arrays for both seed layers; (ii) higher water proportion (1HCl:3water) originated denser films with growth yield dependent on the seed layer employed; while (iii) higher acid proportion (3HCl:1water) hindered the formation of TiO2. X-ray diffraction (XRD) showed that the materials crystallized with the rutile structure, possibly with minute fractions of brookite and/or anatase. XRD peak inversions observed for the materials synthesized on crystalline seeds pointed to preferred crystallographic orientation. Electron diffraction showed that the especially strong XRD peak inversions observed for TiO2 grown from the 1HCl:3water solution on SnO2:F originated from a [001] fiber texture. Transmittance spectrophotometry showed that the materials with finer structure exhibited significantly higher optical band gaps. Photocatalytic activity was assessed from methylene blue degradation, with the 1HCl:3water SnO2:F material showing remarkable degradability performance, attributed to a higher exposure of (001) facets, together with stability and reusability. {\textcopyright} 2015 Elsevier B.V.

}, doi = {10.1016/j.cattod.2015.10.038}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84994054745\&partnerID=40\&md5=43f87b5c8042319b7c90385efcb94072}, author = {Nunes, D.a , Pimentel, A.a , Pinto, J.V.a , Calmeiro, T.R.a , Nandy, S.a , Barquinha, P.a , Pereira, L.a , Carvalho, P.A.b c , F} } @conference {Morawiec2014, title = {Photocurrent enhancement in thin a-Si:H solar cells via plasmonic light trapping}, booktitle = {Conference on Lasers and Electro-Optics Europe - Technical Digest}, volume = {2014-January}, year = {2014}, note = {

cited By 0

}, abstract = {

Photocurrent enhancement in thin a-Si:H solar cells due to the plasmonic light trapping is investigated, and correlated with the morphology and the optical properties of the selfassembled silver nanoparticles incorporated in the cells{\textquoteright} back reflector. {\textcopyright} 2014 Optical Society of America.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84944710757\&partnerID=40\&md5=d4d7c92e2521a3690c431616be559b0e}, author = {Morawiec, S.a b , Mendes, M.J.a , Filonovich, S.A.c , Mateus, T.c , Mirabella, S.a , Aguas, H.c , Ferreira, I.c , Simone, F.b ,} } @article {Figueiredo2013735, title = {P-Type CuxO thin-film transistors produced by thermal oxidation}, journal = {IEEE/OSA Journal of Display Technology}, volume = {9}, number = {9}, year = {2013}, note = {

cited By 9

}, pages = {735-740}, abstract = {

Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different temperatures (150-450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 C and its conversion to CuO starts at 250 C. For lower thicknesses 40 nm, the films oxidized at 250 C showed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively. {\textcopyright} 2005-2012 IEEE.

}, doi = {10.1109/JDT.2013.2247025}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84884285102\&partnerID=40\&md5=b1c9d891450c1d2de998cc8ac0b0c7c2}, author = {Figueiredo, V.a b , Pinto, J.V.a b , Deuermeier, J.a b , Barros, R.a b , Alves, E.c , Martins, R.a b , Fortunato, E.a b} } @conference {Martins2013365, title = {Paper electronics: A challenge for the future}, booktitle = {Digest of Technical Papers - SID International Symposium}, volume = {44}, number = {1}, year = {2013}, note = {

cited By 0

}, pages = {365-367}, abstract = {

In this paper we report results concerning the use of paper as substrate and as an electronic component for the next generation of sustainable low cost electronic systems, where different examples of applications are given. {\textcopyright} 2013 Society for Information Display.

}, doi = {10.1002/j.2168-0159.2013.tb06222.x}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905264459\&partnerID=40\&md5=c81f32ddc303d7dea7668b5a4486b9a9}, author = {Martins, R.a , Pereira, L.b , Fortunato, E.c} } @article {Parthiban2013825, title = {Performances of microcrystalline zinc tin oxide thin-film transistors processed by spray pyrolysis}, journal = {IEEE/OSA Journal of Display Technology}, volume = {9}, number = {10}, year = {2013}, note = {

cited By 4

}, pages = {825-831}, abstract = {

In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with 30 nm thick ZTO channel layer deposited at a substrate temperature of 400 C and 300 Cexhibited, respectively, a saturation mobility of 2.9 cm V s and 1.45 cm V s ; voltage of 0.15 V, and 0.2 V; a sub-threshold swing of 400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of 3.5 10 and 6 10 , for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices{\textquoteright} electronic performances. {\textcopyright} 2013 IEEE.

}, doi = {10.1109/JDT.2013.2262096}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84887091262\&partnerID=40\&md5=2d0cf558bd7e2e0d82bc434b51e87dc1}, author = {Parthiban, S., Elangovan, E., Nayak, P.K., Gon{\c c}alves, A., Nunes, D., Pereira, L., Barquinha, P., Busani, T., Fortunato, E., Mart} } @article {Branquinho2013723, title = {Plastic compatible sputtered ta-inf o sensitive layer for oxide semiconductor tft sensors}, journal = {IEEE/OSA Journal of Display Technology}, volume = {9}, number = {9}, year = {2013}, note = {

cited By 3

}, pages = {723-728}, abstract = {

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered +{\hbox{Ta}}-{2}{\hbox{O}}5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 +^{\circ}{\hbox{C}}+ and crystallize at 700 +^{\circ}{\hbox{C}}+ in an orthorhombic phase. Electrolyte-insulator- semiconductor (EIS) field effect based sensors with an amorphous +{\hbox{Ta}}-{2}{\hbox{O}}5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 +^{\circ}{\hbox{C}}+ pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 +^{\circ}{\hbox{C}}+ , which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors. {\textcopyright} 2005-2012 IEEE.

}, doi = {10.1109/JDT.2012.2229693}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84883805532\&partnerID=40\&md5=27694e4b07d737319719fccf41d74ce4}, author = {Branquinho, R., Pinto, J.V., Busani, T., Barquinha, P., Pereira, L., Baptista, P.V., Martins, R., Fortunato, E.} } @article {Ramos201326, title = {Preparation and characterization of cellulose nanocomposite hydrogels as functional electrolytes}, journal = {Solid State Ionics}, volume = {242}, year = {2013}, note = {

cited By 4

}, pages = {26-32}, abstract = {

In this work Laponite was combined with a modified abundant natural polymer, (caboxymethyl cellulose), acrylic sodium salt polymer and lithium perchlorate aiming to produce inexpensive and sustainable nanocomposite electrolytes for functional electrochemical devices. Optical, electrochemical, structural, morphological and rheological characterization was performed in order to evaluate their properties and potential advantages as electrolyte. It was verified that the addition of Laponite led to an ionic conductivity at room temperature (25 C) in the range of 6 to 9 {\texttimes} 10- 5 Scm - 1 this value being then determined by the composition of the nanocomposite. These electrolytes were applied to electrochromic devices using evaporated nickel oxide thin film as the electrochromic layer. The devices exhibited a significant transmittance modulation that exceeds 45 \% at 600 nm. {\textcopyright} 2013 Elsevier B.V.

}, doi = {10.1016/j.ssi.2013.03.028}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84877757446\&partnerID=40\&md5=b339279a2aadf2aeff0426acb49a5f90}, author = {Ramos, A.M.a b , Pereira, S.a b , Cidade, M.T.a , Pereira, G.a , Branquinho, R.a , Pereira, L.a b , Martins, R.a b , Fortunato,} } @article {Figueiredo201241, title = {P-Type Cu x films deposited at room temperature for thin-film transistors}, journal = {IEEE/OSA Journal of Display Technology}, volume = {8}, number = {1}, year = {2012}, note = {

cited By 14

}, pages = {41-47}, abstract = {

Thin-films of copper oxide Cu x were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure. A metallic Cu film with cubic structure obtained from 0\% O PP has been transformed to cubic Cu x phase for the increase in O PP to 9\% but then changed to monoclinic CuO phase (for. The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu x films produced with O PP ranging between 9\% and 75\% showed p-type behavior, which were successfully applied to produce thin-film transistors. {\textcopyright} 2006 IEEE.

}, doi = {10.1109/JDT.2011.2170153}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84855429944\&partnerID=40\&md5=29ebce203d7e077623825f441f580505}, author = {Figueiredo, V.a , Elangovan, E.a , Barros, R.a b , Pinto, J.V.a , Busani, T.a , Martins, R.a , Fortunato, E.a} } @conference {Martins2012, title = {P-type oxide-based thin film transistors produced at low temperatures}, booktitle = {Proceedings of SPIE - The International Society for Optical Engineering}, volume = {8263}, year = {2012}, note = {

cited By 2

}, abstract = {

P-type thin-film transistors (TFTs) using room temperature sputtered tin and copper oxide as a transparent oxide semiconductor have been produced on rigid and paper substrates. The SnO x films shows p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal β-Sn and α-SnO x phases, after annealing at 200{\textdegree}C. These films exhibit a hole carrier concentration in the range of ≈ 10 16-10 18 cm -3, electrical resistivity between 101-102 Ωcm, Hall mobility of 4.8 cm 2/Vs, optical band gap of 2.8 eV and average transmittance ≈ 85 \% (400 to 2000 nm). Concerning copper oxide Cu xO thin films they exhibit a polycrystalline structure with a strongest orientation along (111) plane. The Cu xO films produced between an oxygen partial pressure of 9 to 75\% showed p-type behavior, as it was measured by Hall effect and Seebeck measurements. The bottom gate p-type SnO x TFTs present field-effect mobility above 1.24 cm 2/Vs (including the paper p-type oxide TFT) and an on/off modulation ratio of 10 3 while the Cu xO TFTs exhibit a field-effect mobility of 1.3{\texttimes}10 -3 cm 2/Vs and an on/off ratio of 2{\texttimes}10 2. {\textcopyright} 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

}, doi = {10.1117/12.907387}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84858598530\&partnerID=40\&md5=e2a6403350a9f30a7a3360d9304eeff2}, author = {Martins, R.a , Figueiredo, V.a , Barros, R.a b , Barquinha, P.a , Gon{\c c}alves, G.a , Pereira, L.a , Ferreira, I.a , Fortunato, E.a} } @article {Silva20112012, title = {Portable optoelectronic biosensing platform for identification of mycobacteria from the Mycobacterium tuberculosis complex}, journal = {Biosensors and Bioelectronics}, volume = {26}, number = {5}, year = {2011}, note = {

cited By 17

}, pages = {2012-2017}, abstract = {

In this paper we report on the fabrication and performance of a portable and low cost optoelectronic platform integrating a double color tuned light emitting diode as light source, an amorphous/nanocrystalline silicon photodetector with a flat spectral response in the wavelength range from 520. nm to 630. nm and integrated electronic for signal acquisition and conditioning constituted by current to voltage converter, a filter and an amplification stage, followed by an analog to digital converter, with appropriate software for full automation to minimize human error. Incorporation of the double color tuned light emitting diode provides for a simple yet innovative solution to signal acquisition independently from the light intensity and/or solution concentration, while considerably decreasing production costs. Detection based on Au-nanoprobes constitutes the biorecognition step and allowed identification of specific sequences of Mycobacterium tuberculosis complex, namely Mycobacterium bovis and M. tuberculosis in biological samples. {\textcopyright} 2010 Elsevier B.V.

}, doi = {10.1016/j.bios.2010.08.078}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650610360\&partnerID=40\&md5=3882549c44806ac6d2fc62b29a41f7e2}, author = {Silva, L.B.a , Veigas, B.b , Doria, G.b , Costa, P.c , In{\'a}cio, J.c , Martins, R.a , Fortunato, E.a , Baptista, P.V.b} } @article {Wang20111490, title = {Properties of P-doped ZnO films RF-sputtered at different substrate temperature}, journal = {Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering}, volume = {40}, number = {8}, year = {2011}, note = {

cited By 3

}, pages = {1490-1494}, abstract = {

In order to study the properties of P-doped ZnO films deposited at low temperature substrates, P-doped ZnO films were RF-sputtered on sapphire substrates in the range from RT to 350{\textdegree}C. XRD spectra indicated the growth of the crystallites along the strongest \<001\> orientation. Further ZnO (002) peak became the weakest when the film was sputtered at 250{\textdegree}C. AFM pictures showed that the surface morphology varied with the deposition temperature. The sample RMS increased with the increase of substrate temperature. XPS spectra showed a clear broad P 2p peak at about 134 eV. Further the film composition varied with the substrate temperature. The average visible transmittance calculated in the wavelength ranging 400-600 nm was more than 60\%. The optical band gap calculated from the absorption coefficient was about 3.2 eV. The Hall measurements confirm the n-type conductivity of the films. The carrier concentration in the films decreases with the increase of substrate temperature. The study is helpful for understanding the properties of P-doped ZnO films sputtered at lower substrate temperature and achieving p type ZnO films at lower temperature.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-80053999007\&partnerID=40\&md5=00efb945feb37c4064548bff3e9bc1c8}, author = {Wang, J.a b , Li, M.a , Sallet, V.c , Rego, A.d , Martins, R.b , Fortunato, E.b} } @conference {Barquinha20101376, title = {P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs}, booktitle = {48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010}, volume = {3}, year = {2010}, note = {

cited By 1

}, pages = {1376-1379}, abstract = {

Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔVT\<0.5 V after 24h of 1D=10 μA stress, quite promising for integration in electronic circuits.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-79151474587\&partnerID=40\&md5=4900ca03bfb29d4bca3a2432ec6fdc1e}, author = {Barquinha, P., Pereira, L., Gon{\c c}alves, G., Martins, R., Fortunato, E.} } @conference {Barquinha20101376, title = {P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs}, booktitle = {Digest of Technical Papers - SID International Symposium}, volume = {41 1}, year = {2010}, note = {

cited By 0

}, pages = {1376-1379}, abstract = {

Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔV T\<0.5 V after 24h of I D=10 μA stress, quite promising for integration in electronic circuits. {\textcopyright} 2010 SID.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863326353\&partnerID=40\&md5=29238e46ffc3f48e589b24444503e076}, author = {Barquinha, P., Pereira, L., Gon{\c c}alves, G., Martins, R., Fortunato, E.} } @article {Golshahi20091149, title = {P-type ZnO thin film deposited by spray pyrolysis technique: The effect of solution concentration}, journal = {Thin Solid Films}, volume = {518}, number = {4}, year = {2009}, note = {

cited By 41

}, pages = {1149-1152}, abstract = {

The aim of this research is to study the role of concentration variations on precursor solution of nitrogen doped ZnO (ZnO:N) thin films which has been prepared by spray pyrolysis technique. SEM micrographs show that ZnO:N films in 0.1~ML concentration have a mono-disperse surface with nano-spheres of 50~nm in diameter. In higher molarities the nano-spheres agglomerate leading to particle formation. For 0.4~ML concentrations this change is observed, where plume like particles are seen over the surface of ZnO:N thin film. This change corresponds also to changes observed in the XRD spectra, where crystal orientation of ZnO:N thin films changes from (002) to (100). All of the ZnO:N thin films have kept their sharp ultra violet absorption edge, but the transparency in visible spectra region decreases as the molarities in precursor solution increase. Photoluminescence spectra at room temperature revealed emissions at 2.33~eV, 2.54~eV and 3.16~eV that can be attributed to the presence of nitrogen in ZnO structure. We also observe that all samples analyzed show a p-type Hall effect behavior, and that as the molarities in the precursor solution increase, the electrical resistivity of the films decreases, due to an enhancement of free carriers, while the mobility decreases. These data prove the capability of spray pyrolysis as a viable technique in preparing p-type TCO materials and so, fully transparent CMOS-like devices. {\textcopyright} 2009 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2009.04.074}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-71649112209\&partnerID=40\&md5=8fb4f897cd7d16d52ae5472e103c82ff}, author = {Golshahi, S.a , Rozati, S.M.a , Martins, R.b , Fortunato, E.b} } @conference {Fortunato2009, title = {Paper field effect transistor}, booktitle = {Proceedings of SPIE - The International Society for Optical Engineering}, volume = {7217}, year = {2009}, note = {

cited By 2

}, abstract = {

In this paper we report the use of a sheet of cellulose fiber-based paper as the dielectric layer used in oxide based semiconductor thin film field-effect transistors (FETs). In this new approach we are using the cellulose fiber-based paper in an "interstate" structure since the device is build on both sides of the cellulose sheet. Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (\>30 cm 2/Vs), drain-source current on/off modulation ratio of approximately 104, near-zero threshold voltage, enhancement n-type operation and sub-threshold gate voltage swing of 0.8 V/decade. The cellulose fiber-based paper FETs characteristics have been measured in air ambient conditions and present good stability. The obtained results outpace those of amorphous Si TFTs and rival with the same oxide based TFTs produced on either glass or crystalline silicon substrates. The compatibility of these devices with large-scale/large-area deposition techniques and low cost substrates as well as their very low operating bias delineates this as a promising approach to attain high-performance disposable electronics like paper displays, smart labels, smart packaging, RFID and point-of-care systems for self analysis in bio-applications, among others. {\textcopyright} 2009 SPIE.

}, doi = {10.1117/12.816547}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-67649227482\&partnerID=40\&md5=2b77ce3ec644b54f5c8049e854fcdaaf}, author = {Fortunato, E.a , Correia, N.a , Barquinha, P.a , Costa, C.a b , Pereira, L.a , Gon{\c c}alves, G.a , Martins, R.a} } @article {Barquinha2009, title = {Performance and stability of low temperature transparent thin-film transistors using barrieramorphous multicomponent dielectrics}, journal = {Journal of the Electrochemical Society}, volume = {156}, number = {11}, year = {2009}, note = {

cited By 35

}, pages = {H824-H831}, abstract = {

High performance transparent thin-film transistors deposited on glass substrates and entirely processed at a low temperature not exceeding 150{\textdegree}C are presented and analyzed in this paper. Besides being based on an amorphous oxide semiconductor, the main innovation of this work relies on the use of sputtered multicomponent oxides as dielectric materials based on mixtures of Ta2O5 with SiO2 or Al2O3. These multicomponent dielectrics allow to obtain amorphous structures and low leakage currents while preserving a high dielectric constant. This results in transistors with remarkable electrical properties, such as field-effect mobility exceeding 35 cm2 V-1 s-1, close to 0 V turn-on voltage, on/off ratio higher than 106, and a subthreshold slope of 0.24 V decade-1, obtained with a Ta2O5: SiO2 dielectric. When subjected to severe current stress tests, optimized devices show little and reversible variation in their electrical characteristics. The devices presented here have properties comparable to the ones using plasma-enhanced chemical vapor deposited SiO2 at 400{\textdegree}C, reinforcing the success of this amorphous multicomponent dielectric approach for low temperature, high performance, and transparent electronic circuits. {\textcopyright} 2009 The Electrochemical Society.

}, doi = {10.1149/1.3216049}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-70349755743\&partnerID=40\&md5=e896d6e6d2ee15e0db4e262bf218b391}, author = {Barquinha, P.a , Pereira, L.b , Gon{\c c}alves, G.a , Martins, R.b , Ku{\v s}{\v c}er, D.c , Kosec, M.c , Fortunato, E.a} } @article {Martins20092121, title = {Physica Status Solidi (A) Applications and Materials: Preface}, journal = {Physica Status Solidi (A) Applications and Materials Science}, volume = {206}, number = {9}, year = {2009}, note = {

cited By 0

}, pages = {2121}, abstract = {n/a}, doi = {10.1002/pssa.200881800}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-70349100036\&partnerID=40\&md5=2992aed060ee15b64bc23ba04d49081a}, author = {Martins, R.} } @article {Bernardo20091112, title = {Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature}, journal = {Synthetic Metals}, volume = {159}, number = {11}, year = {2009}, note = {

cited By 12

}, pages = {1112-1115}, abstract = {

The authors report on the performance of polymer-based light-emitting diodes, LEDs, using amorphous zinc oxide-doped indium oxide, IZO, as anode. In particular, LEDs with poly[(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] as electroluminescent layer and aluminium cathodes, show higher efficiency with this IZO anode (0.015 cd/A) than with indium-tin oxide (ITO) (0.010 cd/A). Inspite of the higher resistance of this IZO electrode, compared with ITO, the fact that it can be processed at lower temperatures and allows similar or even higher efficiency values for polymer LEDs make this material a good candidate for display and other optoelectronic applications. {\textcopyright} 2009 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.synthmet.2009.01.037}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-67349115685\&partnerID=40\&md5=e6d0f03a8e715985ba2a59ace464cb43}, author = {Bernardo, G.a , Gon{\c c}alves, G.b , Barquinha, P.b , Ferreira, Q.a , Brotas, G.a , Pereira, L.b , Charas, A.a , Morgado, J.a c , Ma} } @conference {Albarran2007231, title = {Preliminary budget methodology for reverse engineering applications using laser scanning}, booktitle = {Proceedings of the 3rd International Conference on Advanced Research in Virtual and Rapid Prototyping: Virtual and Rapid Manufacturing Advanced Research Virtual and Rapid Prototyping}, year = {2007}, note = {

cited By 1

}, pages = {231-235}, abstract = {

The driving force behind the work herein presented is the importance of budgeting in a competitive market. The problem at hands is the creation of a budgeting methodology for reverse engineering applications, involving laser scanning, that has the ability to generate budgets for different customer accuracy requirements and for parts of different morphologic characteristics, such as: shape, dimension and/or detail complexity. A breakup approach was used to implement the methodology: the reverse engineering process was broken in nine basic identified steps and elementary sources of cost were defined at the different reverse engineering stages as well. Particular budgeting methodologies for each step of the process were created. The obtained results so far point to the possibility of creating a complete budgeting system based on the proposed methodology. {\textcopyright} 2008 Taylor \& Francis Group.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-75049084900\&partnerID=40\&md5=8897fc64bbe29ba90f7f0d399827b074}, author = {Albarran, T., Lopes, L., Cabe{\c c}a, J., Martins, R.F., Mour{\~a}o, A.J.F.} } @article {Elangovan20075512, title = {Preliminary studies on molybdenum-doped indium oxide thin films deposited by radio-frequency magnetron sputtering at room temperature}, journal = {Thin Solid Films}, volume = {515}, number = {13}, year = {2007}, note = {

cited By 10

}, pages = {5512-5518}, abstract = {

Thin films of molybdenum-doped indium oxide (IMO) were prepared by a 3-source, cylindrical radio-frequency magnetron sputtering at room temperature. The films were post-annealed and were characterized by their structural (X-ray diffraction) and optical (UV-VIS-NIR spectrophotometer) properties. The films were studied as a function of oxygen volume percentage (O2 vol.\%) ranging from 3.5 to 17.5. The structural studies revealed that the as-deposited amorphous films become crystalline on annealing. In most cases, the (222) reflection emerged as high intensive peak. The poor visible transmittance of the films as-deposited without oxygen was increased from \~{} 12\% to over 80\% on introducing oxygen (3.5 O2 vol.\%). For the films annealed in open air, the average visible transmittance in the wavelength ranging 400-800~nm was varied between 77 and 84\%. The films annealed at high temperatures (\> 300~{\textdegree}C) decreased the transmittance to as low as \< 1\%. The optical band gap of the as-deposited films increased from the range 3.83-3.90 to 3.85-3.98~eV on annealing at different conditions. {\textcopyright} 2007 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2007.01.022}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-34047112710\&partnerID=40\&md5=1d7e1f91af44a815558192d307bc8dda}, author = {Elangovan, E., Marques, A., Fernandes, F.M.B., Martins, R., Fortunato, E.} } @article {Martins2006238, title = {Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cells}, journal = {Thin Solid Films}, volume = {511-512}, year = {2006}, note = {

cited By 0

}, pages = {238-242}, abstract = {

This paper presents the performances of an in-line plasma enhanced chemical vapor deposition system constituted by 5 chambers and one external unloaded chamber used in the simultaneous manufacturing of 4 large (30 cm {\texttimes} 40 cm) solar cells deposited on glass substrates. The system is fully automatically controlled by a Programmable Logic Controller using a specific developed software that allows devices mass production without losing the flexibility to perform process innovations according to the industrial requests, i.e. fast and secure changes and optimizations. Overall, the process shift is of about 15 min per each set of 4 solar cells. Without a buffer layer, solar cells with efficiencies of about 9\% were produced by the proper tuning of the i-layer production conditions. {\textcopyright} 2005 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2005.12.001}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33646818669\&partnerID=40\&md5=377180ac16ad2c296966d648df71be4d}, author = {Martins, N.a , Canhola, P.a , Quintela, M.b , Ferreira, I.c , Raniero, L.c , Fortunato, E.c , Martins, R.b c c} } @article {Pereira200628, title = {Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization}, journal = {Materials Science Forum}, volume = {514-516}, number = {PART 1}, year = {2006}, note = {

cited By 0

}, pages = {28-32}, abstract = {

In this work metal induced crystallization (MIC) using nickel (Ni) was employed to obtain poly-Si by crystallization of amorphous films for application as active layer in TFTs. Ni layers with thicknesses of 0.5 nm, 1 nm and 2 nm were used to crystallize the silicon. The TFTs were produced with a bottom gate configuration using a multi-layer Al2O3/TiO2 insulator produced by atomic layer deposition (ALD) as gate dielectric. The best performances of the TFT produced were obtained when using very thin Ni layers for the crystallization. This is attributed to a lower metal contamination and to the enhancement of grain size, as a result of the lower nucleation density achieved, when using the thinnest Ni layer. Devices that exhibit effective mobility of 45.5 cm2V-1s-1 and an on/off ratio of 5.55{\texttimes}104 were produced using a 0.5 nm Ni layer to crystallize the active channel area.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-37849047690\&partnerID=40\&md5=c13156454d87f2f3fb32a5e19ea26118}, author = {Pereira, L., Barquinha, P., Fortunato, E., Martins, R.} } @article {Martins2006, title = {Preface}, journal = {Journal of Non-Crystalline Solids}, volume = {352}, number = {9-20 SPEC. ISS.}, year = {2006}, note = {

cited By 1

}, pages = {vii}, abstract = {n/a}, doi = {10.1016/j.jnoncrysol.2006.03.007}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33744532487\&partnerID=40\&md5=11ad8f7706714e7e798eaf4d515b4b35}, author = {Martins, R., Chu, V., Fortunato, E., Conde, J.P., Ferreira, I.} } @article {Pimentel2005212, title = {Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices}, journal = {Thin Solid Films}, volume = {487}, number = {1-2}, year = {2005}, note = {

cited By 32

}, pages = {212-215}, abstract = {

In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5{\texttimes}108 Ω cm with an optical transmittance of 90\%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface. {\textcopyright} 2005 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2005.01.067}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-22944488292\&partnerID=40\&md5=34e25c8b4384c98e8a29038e4ac3d405}, author = {Pimentel, A., Fortunato, E., Gon{\c c}alves, A., Marques, A., {\'A}guas, H., Pereira, L., Ferreira, I., Martins, R.} } @article {Pereira200489, title = {Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application}, journal = {Materials Science and Engineering B: Solid-State Materials for Advanced Technology}, volume = {109}, number = {1-3}, year = {2004}, note = {

cited By 34

}, pages = {89-93}, abstract = {

The search for new dielectric materials to be used in metal-insulator- semiconductor (MIS) structures to replace the silicon oxide (SiO2) has been growing up. The aim is to have materials with high dielectric constants that could allow the use of thicker films and so, to reduce the role of leakage currents that happens in devices using very thin SiO2 layers or to allow the MIS devices to support high currents, besides having a retain memory effect. In this work, we present data concerning the production of hafnium oxide (HfO2) thin films by radio frequency (rf) sputtering that present suitable characteristics to be used as a gate dielectric, taking advantage of its high dielectric constant and stoichiometry reached under certain deposition conditions. Data concerning the role of the deposition parameters in the films structure and in the electrical properties of the films produced using capacitance-voltage (C-V) and current-voltage (I-V) measurements will be shown, together with data concerning the degree of films{\textquoteright} compactness measured by spectroscopic ellipsometry (SE). {\textcopyright} 2003 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.mseb.2003.10.053}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-2342450573\&partnerID=40\&md5=3578ae027a7f3ac69190c5d574d2b56e}, author = {Pereira, L., Marques, A., {\'A}guas, H., Nedev, N., Georgiev, S., Fortunato, E., Martins, R.} } @article {Cui20047, title = {Physical properties of sputtered ITO and WO3 thin films}, journal = {Materials Science Forum}, volume = {455-456}, year = {2004}, note = {

cited By 3

}, pages = {7-11}, abstract = {

Electrochromic coatings are used in a wide range of technical fields. This paper refers to the properties of amorphous Indium-tin-oxide (ITO) and WO 3 thin films obtained by dc-magnetron reactive sputtering in different oxygen partial pressures (PO2) at room temperature (RT). SEM, XRD and UV-Vis-NIR spectroscopy characterized the films prepared in terms of morphology, structure, and optical and electrical properties. The maximum of the optical transmittance in the visible range for the ITO and WO3 films was above 97\% and 98\%, respectively. These films were incorporated into ECDs (electrochromic devices) whose performance was assessed by optical methods.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-17144451866\&partnerID=40\&md5=5e2aaee9b9e825a1caa2cae027d17442}, author = {Cui, H.-N.a , Teixeira, V.a , Monteiro, A.a d , Fortunato, E.b , Martins, R.b , Bertran, E.c} } @article {Pereira2004178, title = {Polycrystalline silicon obtained by gold metal induced crystallization}, journal = {Journal of Non-Crystalline Solids}, volume = {338-340}, number = {1 SPEC. ISS.}, year = {2004}, note = {

cited By 19

}, pages = {178-182}, abstract = {

The aim of this paper is to study the role of gold (Au) induced crystallization on amorphous silicon (a-Si) films produced by low pressure chemical vapor deposition (LPCVD) at low process temperatures (550 {\textdegree}C) to allow the use of glass substrates. Concerning the crystallization process Au was deposited by e-beam thermal evaporation over the silicon (Si), using different metal thickness, from 5 to 100 {\r A}. The samples were then annealed at 450, 500 and 550 {\textdegree}C and the crystallization time was changed from 5 up to 30 h. The structure of the films was analyzed by X-ray diffraction (XRD) and spectroscopic ellipsometry (SE) while electrical conductivity measurements were performed to obtain the electrical properties of the films produced, namely the activation energy (EA) and how it changes with the Au thickness used. The data achieved show that the increase of the metal layer thickness decreases the time needed to get full crystallization. However this leads to lower conduction activation energy (EA) meaning that there is also an increase of Au incorporation that leads to the production of doped films. {\textcopyright} 2004 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.jnoncrysol.2004.02.048}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-2942527310\&partnerID=40\&md5=148ca8de4b12ef5100077374683ec2a5}, author = {Pereira, L., {\'A}guas, H., Martins, R.M., Fortunato, E., Martins, R.} } @article {Pereira2004334, title = {Polycrystalline silicon obtained by metal induced crystallization using different metals}, journal = {Thin Solid Films}, volume = {451-452}, year = {2004}, note = {

cited By 31

}, pages = {334-339}, abstract = {

The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells. {\textcopyright} 2003 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2003.10.124}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-17644449058\&partnerID=40\&md5=5b3211498107a42d6e97dec663fe0fd4}, author = {Pereira, L.a , {\'A}guas, H.a , Martins, R.M.S.a , Vilarinho, P.b , Fortunato, E.a , Martins, R.a} } @article {Ferreira2004344, title = {Porous a/nc-Si:H films produced by HW-CVD as ethanol vapour detector and primary fuel cell}, journal = {Sensors and Actuators, B: Chemical}, volume = {103}, number = {1-2}, year = {2004}, note = {

cited By 14

}, pages = {344-349}, abstract = {

This work reports the use of undoped porous amorphous/nanocrystalline hydrogenated silicon (a/nc-Si:H) thin films produced by hot wire chemical vapour deposition (HW-CVD) as ethanol detector above 50ppm and as a primary fuel cell where a power of 4μW/cm2 was obtained in structures of the type glass/ITO/i-a-nc-Si:H/Al. The porous silicon looks like a sponge constituted by grains and cluster of grains that determines the type of surface morphology and the behaviour of the structure under the presence of vapour moisture. Apart from that, the detector/device performances will also depend on the type of interlayer and interfaces with the metal contacts. The sponge like structure adsorbs the OH groups in uncompensated bonds, which behave as donor-like carriers, leading to an increase in the current flowing through the material, directly dependent on the ethanol vapour pressure. The corresponding role of the components of the microstructure on this detector was investigated by spectroscopic impedance. The response time of the current of the sensor and its recovery time are in the range of 10-50s at room temperature. {\textcopyright} 2004 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.snb.2004.04.064}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-4444347784\&partnerID=40\&md5=04d9e87cbd0ce6106d2375d87bb6313d}, author = {Ferreira, I., Igreja, R., Fortunato, E., Martins, R.} } @article {Ferreira2004366, title = {Properties of a-Si:H intrinsic films produced by HWPA-CVD technique}, journal = {Thin Solid Films}, volume = {451-452}, year = {2004}, note = {

cited By 0

}, pages = {366-369}, abstract = {

In this paper, we investigate the optoelectronic properties and the photodegradation of amorphous silicon films produced by the hot wire plasma assisted technique (HWPA-CVD). We observed that hydrogen dilution in the gas phase plays an important role in the time dependence of the photoconductivity, which is correlated with an enhancement of defect density. We also compare the degradation of these films with those produced by plasma enhanced and by hot wire chemical vapour deposition techniques (PECVD and HW-CVD) and we found lower time dependence for the photodegradation of the films produced by HWPA-CVD technique {\textcopyright} 2003 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2003.10.145}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-17644445889\&partnerID=40\&md5=9092d994ea27136dcdceb7ecf0e8fd62}, author = {Ferreira, I., {\'A}guas, H., Pereira, L., Fortunato, E., Martins, R.} } @article {{\'A}guas20036, title = {Polymorphous silicon deposited in large area reactor at 13 and 27 MHz}, journal = {Thin Solid Films}, volume = {427}, number = {1-2}, year = {2003}, note = {

cited By 7

}, pages = {6-10}, abstract = {

Despite of a growing interest in this material, until now the studies on polymorphous silicon (pm-Si:H) have been performed on small laboratory reactors working at 13.56 MHz. Envisaging an industrial application of pm-Si:H, the technology was transferred to a large area plasma enhanced chemical vapour deposition reactor (25 {\texttimes} 40 cm2) working at excitation frequencies of 13.56 and 27.12 MHz. The plasma was characterized by impedance probe measurements and the films were characterized by spectroscopic ellipsometry, infrared spectroscopy and hydrogen evolution experiments, which are techniques that allow a rapid and reliable identification of pm-Si:H structure. Conductivity measurements were also performed to determine their transport properties. The results show that scaling up using the 13.56 MHz was successfully done and pm-Si:H films were deposited at a growth rate of ≈ 12 nm/min. Moreover, by using the 27.12 MHz excitation frequency the growth rate was even further increased to above 18 nm/min, as desired for industrial production. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.

}, doi = {10.1016/S0040-6090(02)01172-0}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037416699\&partnerID=40\&md5=cdae65de09de26f0bc9e1435f8cf7e30}, author = {{\'A}guas, H.a , Roca i Cabarrocas, P.b , Lebib, S.b , Silva, V.a , Fortunato, E.a , Martins, R.a} } @article {Martins2003333, title = {Polymorphous Silicon Films Deposited at 27.12 MHz}, journal = {Advanced Materials}, volume = {15}, number = {24}, year = {2003}, note = {

cited By 1

}, pages = {333-337}, abstract = {

This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nm s-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0346640559\&partnerID=40\&md5=1f2c136ab6644bc22947a13cb0ad7026}, author = {Martins, R.a , {\'A}guas, H.a , Ferreira, I.a , Fortunato, E.a , Lebib, S.b , Roca i Cabarrocas, P.b , Guimar{\~a}es, L.a} } @article {Martins2003333, title = {Polymorphous silicon films deposited at 27.12 MHz}, journal = {Chemical Vapor Deposition}, volume = {9}, number = {6}, year = {2003}, note = {

cited By 12

}, pages = {333-337}, abstract = {

This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nms-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

}, doi = {10.1002/cvde.200306261}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-10644291047\&partnerID=40\&md5=7fc8fe13f57cea6b3fda8a7f5ed2174c}, author = {Martins, R.a , {\'A}guas, H.a , Ferreira, I.a , Fortunato, E.a , Lebib, S.b , I Cabarrocas, P.R.b , Guimar{\~a}es, L.a} } @conference {{\'A}guas2003589, title = {Polymorphous Silicon Films Produced in Large Area Reactors by PECVD at 27.12 MHz and 13.56 MHz}, booktitle = {Materials Research Society Symposium - Proceedings}, volume = {762}, year = {2003}, note = {

cited By 0

}, pages = {589-594}, abstract = {

This work refers to a study performed on polymorphous silicon (pm-Si:H) at excitation frequencies of 13.56 and 27.12 MHz in a large area PECVD reactor. The plasma was characterised by impedance probe measurements, aiming to identify the plasma conditions that lead to produce pm-Si:H films. The films produced were characterised by spectroscopic ellipsometry, infrared and Raman spectroscopy and hydrogen exodiffusion experiments, which are techniques that permit the structural characterisation of the pm-Si films and to study the possible differences between the films deposited at 13.56 and 27.12 MHz. Conductivity measurements were also performed to determine the transport properties of the films produced. The set of data obtained show that the 27.12 MHz pm-Si:H can be grown at higher rates with less hydrogen dilution and power density, being the resulting films denser, chemically more stable and with improved performances than the pm-Si:H films grown at 13.56 MHz.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-1642479923\&partnerID=40\&md5=c9e1e90041218df50bd3b73ea82a77cc}, author = {{\'A}guas, H., Raniero, L., Pereira, L., Fortunato, E., Roca i Cabarrocas, P., Martins, R.} } @article {Cabrita20021277, title = {Performance of a-Six:C1-x:H Schottky barrier and pin diodes used as position sensitive detectors}, journal = {Journal of Non-Crystalline Solids}, volume = {299}, number = {302}, year = {2002}, note = {

cited By 8

}, pages = {1277-1282}, abstract = {

Position sensitive detectors (PSD) using hydrogenated amorphous silicon as the active layer have been widely proposed either with the p-i-n or the Schottky structure. In this case, the devices are tailored to respond to light in the range 620-650 nm. Little is known about the use of silicon carbide active layers in such devices, which is important when the detected light is in the blue region of the light spectrum. In this paper we present for the first time the electro-optical properties of the a-Six:C1-x:H/Pd and p-ic-n PSD, using a-Six:C1-x:H layers deposited by plasma enhanced chemical vapour deposition (PECVD). These sensors are able to distinguish the wavelength of the impinging visible radiation (from red to blue light). In addition, the sensors respond to light intensities as lower as 1 {\texttimes} 10-6 W cm-2 with a resolution better than 0.04 mm and a linearity between {\textpm}0.12\% and {\textpm}0.8\%. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.

}, doi = {10.1016/S0022-3093(01)01093-6}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036531797\&partnerID=40\&md5=87ddc9171386a95ab1c40469cd5dadd3}, author = {Cabrita, A., Figueiredo, J., Pereira, L., Silva, V., Brida, D., Fortunato, E., Martins, R.} } @article {Nunes2002293, title = {Performances presented by zinc oxide thin films deposited by r.f. magnetron sputtering}, journal = {Vacuum}, volume = {64}, number = {3-4}, year = {2002}, note = {

cited By 98

}, pages = {293-297}, abstract = {

In this work, we report the electro-optical properties exhibited by ZnO:A1 thin films deposited by r.f. magnetron sputtering. The effect of the deposition parameters on the properties of the films were studied with the aim to determine the most suitable deposition conditions to obtain ZnO:Al thin films with a low resistivity and high transmittance, characteristics required for applications on optoelectronic devices. After annealing, the ZnO:Al thin films present a low resistivity (6.25 {\texttimes} 10-3 Ωcm) and a high transmittance (90\%) when produced with a deposition pressure of 1.6 {\texttimes} 10-2 mbar and r.f. power of 150W. {\textcopyright} 2002 Elsevier Science Ltd. All rights reserved.

}, doi = {10.1016/S0042-207X(01)00323-2}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036135380\&partnerID=40\&md5=96f0e4d899c37003fe3d71a9ef05126f}, author = {Nunes, P., Costa, D., Fortunato, E., Martins, R.} } @article {Bender200245, title = {Production and characterization of zinc oxide thin films for room temperature ozone sensing}, journal = {Thin Solid Films}, volume = {418}, number = {1}, year = {2002}, note = {

cited By 73

}, pages = {45-50}, abstract = {

The room temperature ozone sensing properties of polycrystalline undoped zinc oxide (ZnO) thin films have been investigated. ZnO thin films have been produced by the d.c. and r.f. magnetron sputtering technique as well as with spray pyrolysis with a variety of parameters. The as-grown films were brought to a high conducting state through a reversible photoreduction process by UV light exposure and were subsequently exposed to ozone resulting in a strong resistivity increase caused by re-oxidation. The magnitude of the effect was largest for the sputtered films, which exhibited resistivity changes of more than 8 orders of magnitude, whereas films deposited by spray pyrolysis showed changes of less than 3 orders of magnitude. XRD and AFM analysis of the films revealed that all films were microcrystalline. The film texture, however, was strongly related to the growth technique and the parameters used. Best results were achieved with r.f.-sputtered films, which have been deposited at high total pressures. These films exhibited a sensor response of 1.2 {\texttimes} 108. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.

}, doi = {10.1016/S0040-6090(02)00588-6}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036798291\&partnerID=40\&md5=a5bd3d833a263f1396b079cebc333a14}, author = {Bender, M.a , Gagaoudakis, E.a , Douloufakis, E.a , Natsakou, E.a , Katsarakis, N.a , Cimalla, V.a , Kiriakidis, G.a , Fortunato} } @article {Ferreira200230, title = {The properties of a-Si:H films deposited on Mylar substrates by hot-wire plasma assisted technique}, journal = {Journal of Non-Crystalline Solids}, volume = {299-302}, year = {2002}, note = {

cited By 0

}, pages = {30-35}, abstract = {

In this work we studied the influence of hydrogen dilution, rf power, and the filament and substrate temperatures on the electro-optical properties and composition of a-Si:H films produced by hot wire plasma assisted technique. The a-Si:H films were produced on Mylar substrates with growth rate of up to 37 {\r A}/s, ημτ product of 1.6 {\texttimes} 10-7 cm2/V, photoconductivity to dark conductivity ratio of 1 {\texttimes} 104 (at AM1.5 radiation), and a dark conductivity of about 10-10 (Ω cm)-1 for substrate temperature of 130 {\textdegree}C, hydrogen dilution of 99\%, filament temperature of 1700 {\textdegree}C, and rf power of 100 W. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.

}, doi = {10.1016/S0022-3093(01)01173-5}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036539809\&partnerID=40\&md5=d0767068690d5cab263243218012216d}, author = {Ferreira, I.a , Fortunato, E.a , Pereira, L.a , Costa, M.E.V.b , Martins, R.a} } @article {Nunes2002424, title = {Properties presented by ZnO thin films deposited by magnetron sputtering and spray pyrolysis}, journal = {Key Engineering Materials}, volume = {230-232}, year = {2002}, note = {

cited By 2

}, pages = {424-427}, abstract = {

The most common techniques used to produce ZnO thin films are the spray pyrolysis and the magnetron sputtering techniques, low and high cost processes respectively. The aim of this work is to compare the properties of the films produced by these two techniques. The predominant difference observed was on the morphological properties. The films produced by spray pyrolysis have a rougher surface than the ones obtained by sputtering. Also the effect of the thermal annealing treatment is much more prononnced for the ZnO thin films produced by spray pyrolysis. After heat treatment films exhibit similar electrical properties and their application to optoelectronic devices is demonstrated.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036430522\&partnerID=40\&md5=e59655559d6bc60aefd197dd3194f8bf}, author = {Nunes, P., Fortunato, E., Martins, R., Vilarinho, P.} } @conference {Nunes2001152, title = {Performances presented by large area ZnO thin films deposited by spray pyrolysis}, booktitle = {Materials Research Society Symposium Proceedings}, volume = {685}, year = {2001}, note = {

cited By 0

}, pages = {152-157}, abstract = {

In this work we present the results of a study on the uniformity of ZnO thin films produced by spray pyrolysis. The properties of the thin films depend essentially on the carrier gas pressure and gas flow used. The best films for optoelectronic applications were obtained with a carrier gas pressure of 2 bar and solution flow of 37 ml/min. The velocity of the nozzle affects essentially the uniformity of the ZnO thin films. However this important characteristic of the large area thin films is independent of the nature (doped and undoped) of the thin film and exhibits a high dependence on the variation of the temperature along the substrate. {\textcopyright} 2001 Materials Research Society.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-34249915057\&partnerID=40\&md5=e8d580794f66866bee8f671853028acb}, author = {Nunes, P., Marques, A., Fortunato, E., Martins, R.} } @conference {Ferreira2001, title = {Porous silicon thin film gas sensor}, booktitle = {Materials Research Society Symposium - Proceedings}, volume = {664}, year = {2001}, note = {

cited By 0

}, pages = {A2671-A2676}, abstract = {

The performances of amorphous and nano-crystalline porous silicon thin films as gas detector are pioneer reported in this work. The films were produced by the hot wire chemical vapour deposition (HW-CVD). These films present a porous like-structure, which is due to the uncompensated bonds and oxidise easily in the presence of air. This behaviour is a problem when the films are used for solar cells or thin film transistors. For as gas detectors, the oxidation is a benefit, since the CO, H2 or O2 molecules replace the OH adsorbed group. In the present study we observe the behaviour of amorphous and nano-crystalline porous silicon thin films under the presence of ethanol, at room temperature. The data obtained reveal a change in the current values recorded by more than three orders of magnitude, depending on the film preparation condition. This current behaviour is due to the adsorption of the OH chemical group by the Si uncompensated bonds as can be observed in the infrared spectra. Besides that, the current response and its recover time are done in few seconds.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035558235\&partnerID=40\&md5=6f219c7c477104d1f39307faf9304506}, author = {Ferreira, I., Fortunato, E., Martins, R.} } @article {Fortunato2001310, title = {Production and characterization of large area flexible thin film position sensitive detectors}, journal = {Thin Solid Films}, volume = {383}, number = {1-2}, year = {2001}, note = {

cited By 11

}, pages = {310-313}, abstract = {

Flexible large area thin film position sensitive detectors based on amorphous silicon technology were prepared on polyimide substrates using the conventional plasma enhanced chemical vapor deposition technique. The sensors were characterized by spectral response, illuminated I-V characteristics position detectability measurements and atomic force microscopy. The obtained one-dimensional position sensors, 5-mm wide and 60-mm long, presented a maximum spectral response at 600 nm, an open circuit voltage of 0.6 V and a position detectability with a correlation of 0.9989 associated to a S.D. of 1{\texttimes}10-2, comparable to those produced on glass substrates.

}, doi = {10.1016/S0040-6090(00)01610-2}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035247756\&partnerID=40\&md5=9bb98b5b123939db543e50223e42f148}, author = {Fortunato, E., Brida, D., Ferreira, I., {\'A}guas, H., Nunes, P., Martins, R.} } @conference {Ferreira2001, title = {Properties of nano-crystalline n-type silicon films produced by hot wire plasma assisted technique}, booktitle = {Materials Research Society Symposium - Proceedings}, volume = {664}, year = {2001}, note = {

cited By 1

}, pages = {A761-A766}, abstract = {

In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000{\textdegree}C and the rf power was varied from 0 W to 200 W while gas flow rate was varied from 15 to 100 sccm keeping rf power at 50 W. In this flow rate range, the growth rate of the films varied from 5{\r A}/s to 250{\r A}/s and the corresponding electrical room dark conductivity varied from 10-2 to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to 2 cm2/V.s as rf power change from 0 W to 200 W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and μRaman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60 nm.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035556743\&partnerID=40\&md5=3c8006f9bc15d6e529b7372816e69259}, author = {Ferreira, I., Fernandes, F.B., Vilarinho, P., Fortunato, E., Martins, R.} } @conference {Nunes2001128, title = {Properties of ZnO thin films deposited by spray pyrolysis and magnetron sputtering}, booktitle = {Materials Research Society Symposium Proceedings}, volume = {685}, year = {2001}, note = {

cited By 1

}, pages = {128-133}, abstract = {

In this work we present a study of the properties of ZnO thin films produced by spray pyrolysis and r.f. magnetron sputtering. Before the annealing treatment the properties of the films are very similar, which means that the films produced by both techniques could be used on optoelectronic devices. However spray pyrolysis is a more simple and cheap technique than sputtering, but with this last technique the thin films exhibit a higher uniformity. {\textcopyright} 2001 Materials Research Society.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-34249877422\&partnerID=40\&md5=97b5d9d9946f29c6479c64d1dc07490c}, author = {Nunes, P., Fortunato, E., Martins, R.} } @article {Nunes2001139, title = {Properties presented by tin oxide thin films deposited by spray pyrolysis}, journal = {Solid State Phenomena}, volume = {80-81}, year = {2001}, note = {

cited By 0

}, pages = {139-144}, abstract = {

Thin films of SnO2 deposited by spray pyrolysis as a function of temperature and the carrier gas flow have been produced, in order to evaluate the adequate deposition parameters for application in optoelectronic devices. The characterisation was centred mainly onto the structural, electrical and optical properties of the films. The obtained results showed that the films produced at 450{\textdegree}C and a gas flow of 101/min (as deposited) present an average transmittance (visible spectrum) of 90\% and a bulk resistivity of 3.2{\texttimes}10-3 Ωcm.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034836713\&partnerID=40\&md5=8726531323645940e4e16ed4d9b7e26a}, author = {Nunes, P., Fortunato, E., Vilarinho, P., Martins, R.} } @article {Fortunato2000765, title = {Performances of an optical ruler based on one-dimensional hydrogenated amorphous Si position-sensitive detectors produced using different metal contacts}, journal = {Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties}, volume = {80}, number = {4}, year = {2000}, note = {

cited By 5

}, pages = {765-774}, abstract = {

The aim of this work is to determine the role of different metal contacts on the performances of one-dimensional thin-film position-sensitive detectors produced by plasma-enhanced chemical vapour deposition, to be used in optical rulers for alignment applications. The device consists on an indium tin oxide/p-i-n structure where the metal contacts used were based on Al, Al + Cu and Ag. The results achieved show that the contact mainly influences the final sensor range by limiting the magnitude of the analogue signals recorded. In spite of soldering problems the Al contact was the contact that lead to better discrimination of the sensor, with a nonlinearity of {\textpm}0.8\% and a fall-off parameter of 3.2 {\texttimes} 10-3 cm-1. The Al + Cu contact also exhibits good performances (nonlinearity, of {\textpm}1.1\%; fall-off parameter, 1.4 {\texttimes} 10-2 cm-1) and should be chosen since it is much easier to solder but requires protection against oxidation. The integration of these sensors on the optical ruler lead to the production of a system with a response time below 0.5 ms, an accuracy better than {\textpm}1\% and a mechanical precision of better than 0.25 mm in 100 mm, with a full-scale noise below {\textpm}0.1\%.

}, doi = {10.1080/014186300255393}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-18744388272\&partnerID=40\&md5=22ac83381f345d1e68a7446adfcf675b}, author = {Fortunato, E.a , Teodoro, P.a , Silva, V.a , Ferreira, I.a , Nunes, Y.a , Guimar{\~a}es, N.a , Soares, F.a , Giuliani, F.a , Popovic} } @article {{\'A}guas200031, title = {Plasma diagnostics of a PECVD system using different R.F. electrode configurations}, journal = {Vacuum}, volume = {56}, number = {1}, year = {2000}, note = {

cited By 9

}, pages = {31-37}, abstract = {

This work aims to study the role of the r.f. electrode configuration on the plasma characteristics of a PECVD asymmetric reactor. The configurations used are the usual diode configuration, the triode configuration and a new configuration that we named short-circuited grid electrode (SGE). The plasma generated was characterized with the use of a Langmuir probe and an impedance probe. We demonstrate that the plasma parameters are highly dependent on the reactor geometry. The results achieved show that by changing the r.f. electrode configuration the DC self-bias varies from about 100 to close to 0 V. This variation causes changes in the ion bombardment of the reactor surfaces, which can affect the growing of the films deposited. We also demonstrate that for the SGE configuration the area seen by the plasma does not correspond to the exposed physical area of the electrode, and we suggest a model to explain this phenomenon.

}, doi = {10.1016/S0042-207X(99)00157-8}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033908301\&partnerID=40\&md5=476b02ee940cab988396c1ec2582800e}, author = {{\'A}guas, H., Martins, R., Fortunato, E.} } @article {Ferreira2000292, title = {Production of low cost contacts and joins for large area devices by electrodeposition of Cu and Sn}, journal = {Applied Surface Science}, volume = {168}, number = {1-4}, year = {2000}, note = {

cited By 4

}, pages = {292-295}, abstract = {

The aim of this paper is to present results concerning the morphology, structure, mechanical and electrical characteristics of the new proposed Cu-Sn metallurgical alloy, which may be used in electronic joins. By proper choice of process temperature and pressure, Cu coated surfaces are soldered using Sn as pre-form. The main results achieved indicate that the formation of Cu3Sn phase begins at a temperature of about 473 K and that the Sn thickness (dSn) needed is slightly above 7 μm. Due to join wettability, higher temperatures (between 523 and 573 K) and dSn above 35 μm are required to form joins within the specifications of the electronic industry.

}, doi = {10.1016/S0169-4332(00)00627-9}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034514366\&partnerID=40\&md5=81b7868752c4045e10af1911614e4714}, author = {Ferreira, J.a , Seiroco, H.a , Braz Fernandes, F.a , Martins, R.a , Fortunato, E.a , Marv{\~a}o, A.P.b , Martins, J.I.c} } @article {Ba{\'\i}a1999171, title = {Performances exhibited by large area ITO layers produced by r.f. magnetron sputtering}, journal = {Thin Solid Films}, volume = {337}, number = {1-2}, year = {1999}, note = {

cited By 56

}, pages = {171-175}, abstract = {

This work refers to the main electro-optical characteristics exhibited by large area indium tin oxide films (300 {\texttimes} 400 mm) produced by r.f. magnetron sputtering under different oxygen concentrations and deposition pressures. Besides that, the ageing effect on the electro-optical characteristics of the films produced was also analyzed. The results achieved show that the film transparency and conductivity were highly improved (more than four orders of magnitude) by first annealing them in air at 470{\textdegree}C, followed by a reannealed stage under vacuum, in a hydrogen atmosphere, at 350{\textdegree}C. The ageing tests show that film degradation occurs when the films are produced at oxygen concentrations above 10\% and/or at deposition pressures above 1.2 {\texttimes} 10-2 mbar. {\textcopyright} 1999 Elsevier Science S.A. All rights reserved.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0342487754\&partnerID=40\&md5=bf03261b7c62a1bd637f77ab73956b85}, author = {Ba{\'\i}a, I.a , Quintela, M.b , Mendes, L.a , Nunes, P.a , Martins, R.b} } @article {Martins1999203, title = {Performances of a-Si:H films produced by hot wire plasma assisted technique}, journal = {Vacuum}, volume = {52}, number = {1-2}, year = {1999}, note = {

cited By 3

}, pages = {203-208}, abstract = {

This work reports on the performances of undoped and doped amorphous/nanocrystalline silicon films grown by hot wire plasma assisted technique. The structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), composition (oxygen and hydrogen content) and transport properties of the films are highly dependent on the temperature of the filament and on the hydrogen dilution. The undoped films grown under low r.f. power (≈4mWcm-2) and filament temperatures around 1850 K present dark conductivities below 10-10 Scm-1, optical gaps of about 1.6 eV and photosensitivities above 105, (under AM 1.5 light intensities), with almost no traces of oxygen content. For the n- and the p-doped silicon films also fabricated under the same conditions the conductivities obtained are of about 10-2Scm-1 and 10-5Scm-1, respectively. {\textcopyright} 1998 Elsevier Science Ltd. All rights reserved.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032762765\&partnerID=40\&md5=8a6a611722aa5d787afd005b7c9df986}, author = {Martins, R., Ferreira, I., Fernandas, B., Fortunato, E.} } @conference {Ferreira1999607, title = {Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique}, booktitle = {Materials Research Society Symposium - Proceedings}, volume = {507}, year = {1999}, note = {

cited By 2

}, pages = {607-612}, abstract = {

This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film{\textquoteright}s structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈4 mWcm-2) and with filament temperatures around 1850 {\textdegree}K have dark conductivities below 10-10 Scm-1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM1.5), with almost no traces of oxygen content. N-doped silicon films were also fabricated under the same conditions which attained conductivities of about 10-2 Scm-1.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032625047\&partnerID=40\&md5=3dca575a96ef9aaf9eb3d0996369d61c}, author = {Ferreira, I., Aguas, H., Mendes, L., Fernandes, F., Fortunato, E., Martins, R.} } @article {Nunes1999176, title = {Performances presented by zinc oxide thin films deposited by spray pyrolysis}, journal = {Thin Solid Films}, volume = {337}, number = {1-2}, year = {1999}, note = {

cited By 144

}, pages = {176-179}, abstract = {

The effect of doping and annealing atmosphere on the performances of zinc oxide thin films prepared by spray pyrolysis have been studied. The results show that the way doping influences the electrical and structural properties depends also on the characteristics of the doping element. Annealing the as-deposited films in an inert atmosphere leads to a substantial reduction in the resistivity of the films deposited and to an increase on the degree of film{\textquoteright}s crystallinity. {\textcopyright} 1999 Elsevier Science S.A. All rights reserved.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000475707\&partnerID=40\&md5=f4ee5924c994256c7e7e8576caf0e216}, author = {Nunes, P.a , Fernandes, B.a , Fortunato, E.a , Vilarinho, P.b , Martins, R.a} } @article {Fortunato1998202, title = {Photochemical sensors based on amorphous silicon thin films}, journal = {Sensors and Actuators, B: Chemical}, volume = {B46}, number = {3}, year = {1998}, note = {

cited By 4

}, pages = {202-207}, abstract = {

Hydrogenated amorphous silicon photochemical sensors based on Pd metal/insulator/semiconductor (Pd-MIS) structures were produced by plasma enhanced chemical vapour deposition (PECVD) with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases adsorbed, in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than two orders of magnitude variation on the reverse dark current in the presence of 400 ppm hydrogen. When the sensors are submitted to light it corresponds a decrease of 45\% on the open circuit voltage.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032021479\&partnerID=40\&md5=c819f4dbd5083a67993af86752bafe49}, author = {Fortunato, Elvira, Malik, Alexander, Martins, Rodrigo} } @article {Courteille19962069, title = {Particle agglomeration study in in silane plasmas: In situ study by polarization-sensitive laser light scattering}, journal = {Journal of Applied Physics}, volume = {80}, number = {4}, year = {1996}, note = {

cited By 85

}, pages = {2069-2078}, abstract = {

To determine self-consistently the time evolution of particle size and their number density in situ multi-angle polarization-sensitive laser light scattering was used. Cross-polarization intensities (incident and scattered light intensities with opposite polarization) measured at 135{\textdegree} and ex situ transmission electronic microscopy analysis demonstrate the existence of nonspherical agglomerates during the early phase of agglomeration. Later in the particle time development both techniques reveal spherical particles again. The presence of strong cross-polarization intensities is accompanied by low-frequency instabilities detected on the scattered light intensities and plasma emission. It is found that the particle radius and particle number density during the agglomeration phase can be well described by the Brownian free molecule coagulation model. Application of this neutral particle coagulation model is justified by calculation of the particle charge whereby it is shown that particles of a few tens of nanometer can be considered as neutral under our experimental conditions. The measured particle dispersion can be well described by a Brownian free molecule coagulation model including a log-normal particle size distribution. {\textcopyright} 1996 American Institute of Physics.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0001314405\&partnerID=40\&md5=b4e5d5dc63519f1f845a7529f72c1f66}, author = {Courteille, C.a , Hollenstein, Ch.a , Dorier, J.-L.a , Gay, P.a , Schwarzenbach, W.a , Howling, A.A.a , Bertran, E.b , Viera, G.} } @article {Fortunato1996148, title = {Performances presented by large-area thin film position-sensitive detectors based on amorphous silicon}, journal = {Thin Solid Films}, volume = {272}, number = {1}, year = {1996}, note = {

cited By 2

}, pages = {148-156}, abstract = {

This paper presents a low-cost technology for the realisation of large-area thin film position-sensitive detectors using the a-Si:H technology. The obtained results are quite promising regarding the application of these sensors to a wide variety of optical inspection systems, such as: machine tool alignment and control; angle measuring; rotation monitoring; surface profiling; medical instrumentation; targeting; remote optical alignment; guidance systems; etc., to which automated inspection control is needed.

}, doi = {10.1016/0040-6090(95)06976-3}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029772806\&partnerID=40\&md5=841078712d398275d6d718ce89dd1c01}, author = {Fortunato, E., Lavareda, G., Scares, F., Martins, R.} }