Casimiro, M. H., A. G. Silva, J. V. Pinto, A. M. Ramos, J. Vital, and L. M. Ferreira,
"Catalytic poly(vinyl alcohol) functionalized membranes obtained by gamma irradiation",
Radiation Physics and Chemistry, vol. 81, issue 9, pp. 1314-1318, 2012.
Abstractn/a
Savoini, B., R. Gonzalez, J. V. Pinto, R. C. da Silva, and E. Alves,
"Copper and cobalt nanocolloids in implanted MgO crystals",
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 257, pp. 563-567, 2007.
Abstractn/a
Savoini, B., D. Caceres, R. Gonzalez, Y. Chen, J. V. Pinto, R. C. da Silva, and E. Alves,
"Copper nanocolloids in MgO crystals implanted with Cu ions",
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 218, pp. 148-152, 2004.
Abstractn/a
Nandy, S., G. Goncalves, J. V. Pinto, T. Busani, V. Figueiredo, L. Pereira, R. F. Paiva Martins, and E. Fortunato,
"Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars",
Nanoscale, vol. 5, issue 23, pp. 11699-11709, 2013.
AbstractThe present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.
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