<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Nandy, Suman</style></author><author><style face="normal" font="default" size="100%">Goncalves, Goncalo</style></author><author><style face="normal" font="default" size="100%">Pinto, Joana Vaz</style></author><author><style face="normal" font="default" size="100%">Busani, Tito</style></author><author><style face="normal" font="default" size="100%">Figueiredo, Vitor</style></author><author><style face="normal" font="default" size="100%">Pereira, Luis</style></author><author><style face="normal" font="default" size="100%">Paiva Martins, Rodrigo Ferrao</style></author><author><style face="normal" font="default" size="100%">Fortunato, Elvira</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars</style></title><secondary-title><style face="normal" font="default" size="100%">Nanoscale</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2013</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2013</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://dx.doi.org/10.1039/C3NR03803C</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">5</style></volume><pages><style face="normal" font="default" size="100%">11699-11709</style></pages><isbn><style face="normal" font="default" size="100%">2040-3364</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">23</style></issue><notes><style face="normal" font="default" size="100%">n/a</style></notes></record></records></xml>