<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Branquinho, R.</style></author><author><style face="normal" font="default" size="100%">Pinto, JV</style></author><author><style face="normal" font="default" size="100%">Busani, T.</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.</style></author><author><style face="normal" font="default" size="100%">Pereira, L.</style></author><author><style face="normal" font="default" size="100%">Viana Baptista, P.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors</style></title><secondary-title><style face="normal" font="default" size="100%">Display Technology, Journal of</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">amorphous semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">amorphous sensing layer</style></keyword><keyword><style  face="normal" font="default" size="100%">Annealing</style></keyword><keyword><style  face="normal" font="default" size="100%">Biosensors</style></keyword><keyword><style  face="normal" font="default" size="100%">chemical sensors</style></keyword><keyword><style  face="normal" font="default" size="100%">deposited films</style></keyword><keyword><style  face="normal" font="default" size="100%">Dielectrics</style></keyword><keyword><style  face="normal" font="default" size="100%">EIS field effect based sensors</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrolyte-insulator-semiconductor (eis) sensor</style></keyword><keyword><style  face="normal" font="default" size="100%">electrolyte-insulator-semiconductor field effect based sensor</style></keyword><keyword><style  face="normal" font="default" size="100%">field effect transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">orthorhombic phase</style></keyword><keyword><style  face="normal" font="default" size="100%">oxide semiconductor TFT sensor</style></keyword><keyword><style  face="normal" font="default" size="100%">pH sensitivity</style></keyword><keyword><style  face="normal" font="default" size="100%">plastic compatible sputtered sensitive layer</style></keyword><keyword><style  face="normal" font="default" size="100%">polymeric substrates</style></keyword><keyword><style  face="normal" font="default" size="100%">post-deposition annealing temperature</style></keyword><keyword><style  face="normal" font="default" size="100%">Sensitivity</style></keyword><keyword><style  face="normal" font="default" size="100%">Sensor phenomena and characterization</style></keyword><keyword><style  face="normal" font="default" size="100%">sputtered &lt;formula formulatype=&quot;inline&quot;&gt;&lt;tex Notation=&quot;TeX&quot;&gt;${hbox{Ta}}_{2}{hbox{O}}_{5}$&lt;/tex&gt; &lt;/formula&gt;</style></keyword><keyword><style  face="normal" font="default" size="100%">stabilized sensor response</style></keyword><keyword><style  face="normal" font="default" size="100%">Surface morphology</style></keyword><keyword><style  face="normal" font="default" size="100%">Ta&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt;</style></keyword><keyword><style  face="normal" font="default" size="100%">tantalum compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">temperature 200 degC</style></keyword><keyword><style  face="normal" font="default" size="100%">temperature 293 K to 298 K</style></keyword><keyword><style  face="normal" font="default" size="100%">temperature annealing</style></keyword><keyword><style  face="normal" font="default" size="100%">Temperature sensors</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2013</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2013</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">723-728</style></pages><isbn><style face="normal" font="default" size="100%">1551-319X</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt; was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 &amp;#xB0;C and crystallize at 700 &amp;#xB0;C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 &amp;#xB0;C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 &amp;#xB0;C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">9</style></issue><notes><style face="normal" font="default" size="100%">n/a</style></notes></record></records></xml>