@article {10810,
	title = {Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors},
	journal = {Display Technology, Journal of},
	volume = {9},
	year = {2013},
	note = {n/a},
	month = {2013},
	pages = {723-728},
	abstract = {<p>The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta<sub>2</sub>O<sub>5</sub> was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 \&$\#$xB0;C and crystallize at 700 \&$\#$xB0;C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 \&$\#$xB0;C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 \&$\#$xB0;C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.</p>
},
	keywords = {amorphous semiconductors, amorphous sensing layer, Annealing, Biosensors, chemical sensors, deposited films, Dielectrics, EIS field effect based sensors, Electrolyte-insulator-semiconductor (eis) sensor, electrolyte-insulator-semiconductor field effect based sensor, field effect transistors, orthorhombic phase, oxide semiconductor TFT sensor, pH sensitivity, plastic compatible sputtered sensitive layer, polymeric substrates, post-deposition annealing temperature, Sensitivity, Sensor phenomena and characterization, sputtered <formula formulatype="inline"><tex Notation="TeX">${hbox{Ta}}_{2}{hbox{O}}_{5}$</tex> </formula>, stabilized sensor response, Surface morphology, Ta<sub>2</sub>O<sub>5</sub>, tantalum compounds, temperature 200 degC, temperature 293 K to 298 K, temperature annealing, Temperature sensors},
	isbn = {1551-319X},
	author = {Branquinho, R. and Pinto, JV and Busani, T. and Barquinha, P. and Pereira, L. and Viana Baptista, P. and Martins, R. and Fortunato, E.}
}
