@article {Branquinho2013,
	title = {{Plastic Compatible Sputtered Ta O Sensitive Layer for Oxide Semiconductor TFT Sensors}},
	journal = {Journal of Display Technology},
	volume = {9},
	number = {9},
	year = {2013},
	note = {n/a},
	pages = {723{\textendash}728},
	abstract = {<p>The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta O was investigated. Structural and morphological features of these films were analyzed before and after annealing at various tem- peratures. The deposited films are amorphous up to 600 Cand crystallize at 700 C in an orthorhombic phase. Electrolyte-insu- lator-semiconductor (EIS) field effect based sensors with an amor- phousTa O sensing layer showed pHsensitivity above 50 mV/pH. For sensors annealed above 200 C pH sensitivity decreased with increasing temperature. Stabilized sensor response andmaximum pHsensitivitywas achieved after low temperature annealing at 200 C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors</p>
},
	keywords = {Biosensors, electrolyte-insulator-semiconductor EIS sensor, pH sensitivity, sputtered Ta2O5, sputtering, Ta2O5, TFT},
	author = {Branquinho, Rita and Pinto, Joana V. and Busani, Tito and Barquinha, Pedro and Pereira, Luis and Baptista, Pedro Viana and Martins, Rodrigo and Fortunato, Elvira}
}
