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Martins, R., R. Igreja, I. Ferreira, A. Marques, A. Pimentel, A. Gonçalves, and E. Fortunato. "Room temperature dc and ac electrical behaviour of undoped ZnO films under UV light." Materials Science and Engineering: B. 118.1 (2005): 135-140. Abstract
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Martins, R., A. Macarico, I. Ferreira, and E. Fortunato. "Role of the gas flow parameters on the uniformity of films produced by PECVD technique." MRS Proceedings. 467.1 (1997). Abstract
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Martins, R., I. Ferreira, B. Fernandes, and E. Fortunato. "Performances of a-Si: H films produced by hot wire plasma assisted technique." Vacuum. 52.1 (1999): 203-208. Abstract
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Martins, R., H. Aguas, V. Silva, I. Ferreira, A. Cabrita, and E. Fortunato. "Nanostructured silicon films produced by PECVD." MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 664 (2001): A9. 6-A9. 6. Abstract
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Martins, Rodrigo, Pedro Barquinha, LuÍs Pereira, Nuno Correia, Gonçalo Gonçalves, Isabel Ferreira, and Elvira Fortunato. "Write-erase and read paper memory transistor." Applied physics letters. 93.20 (2008): 203501-3. Abstract
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Martins, R., P. Barquinha, L. Pereira, I. Ferreira, and E. Fortunato. "Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors." Applied Physics A. 89.1 (2007): 37-42. Abstract
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Martins, R., V. Figueiredo, R. Barros, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and E. Fortunato P-type oxide-based thin film transistors produced at low temperatures. SPIE OPTO. International Society for Optics and Photonics, 2012. Abstract
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Martins, R., V. Chu, E. Fortunato, JP Conde, and I. Ferreira Proceedings of the Twenty First International Conference on Amorphous and Nanocrystalline Semiconductors-Science and Technology-Calouste Gulbenkian Foundation, Lisbon, Portugal-September 4-9, 2005 Preface. ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, 2006. Abstract
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Martins, R., H. Águas, V. Silva, I. Ferreira, A. Cabrita, and E. Fortunato. "Silicon nanostructure thin film materials." Vacuum. 64.3 (2002): 219-226. Abstract
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Martins, R., M. Vieira, I. Ferreira, and E. Fortunato. "The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques." MRS Proceedings. 358.1 (1994). Abstract
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Martins, R., G. Willeke, E. Fortunato, I. Ferreira, M. Vieira, M. Santos, A. Maçarico, and L. Guimarães. "Transport in μc-Si< sub> x: C< sub> y: O< sub> z: H films prepared by a TCDDC system." Journal of Non-Crystalline Solids. 114 (1989): 486-488. Abstract
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Martins, Rodrigo, Isabel Ferreira, Francisco Fernandes, and Elvira Fortunato. "Role of the deposition conditions on the properties presented by nanocrystallite silicon films produced by hot wire." Journal of non-crystalline solids. 227 (1998): 901-905. Abstract
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Martins, R., I. Ferreira, E. Fortunato, and M. Vieira. "Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques." MRS Proceedings. 336.1 (1994). Abstract
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Martins, Rodrigo, Hugo Águas, Isabel Ferreira, Elvira Fortunato, Sarra Lebib, P. Roca i Cabarrocas, and Leopoldo Guimarães. "Polymorphous silicon films deposited at 27.12 MHz." Chemical Vapor Deposition. 9.6 (2003): 333-337. Abstract
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Martins, Rodrigo, Pedro Teodoro, Fernando Soares, Isabel Ferreira, Nuno Guimarães, Elvira Fortunato, Joao Borges, Guilhermino José, Achim Groth, and Lotar Schultze. "Application of Amorphous Silicon Thin‐Film Position‐Sensitive Detector to Optical Rules." Advanced Engineering Materials. 3.3 (2001): 174-177. Abstract
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Martins, R., H. Águas, I. Ferreira, E. Fortunato, and L. Guimarães. "Towards the improvement of the stability of a-Si: H pin devices." Solar energy. 69 (2001): 257-262. Abstract
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Martins, R., I. Ferreira, H. Águas, V. Silva, E. Fortunato, and L. Guimarães. "Engineering of a-Si: H device stability by suitable design of interfaces." Solar energy materials and solar cells. 73.1 (2002): 39-49. Abstract
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Martins, R., I. Ferreira, and E. Fortunato. "BY SPATIAL SEPARATION TECHNIQUES." (Submitted). Abstract
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Martins, R., I. Ferreira, and E. Fortunato. "Electronics with and on paper." physica status solidi (RRL)-Rapid Research Letters. 5.9 (2011): 332-335. Abstract
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Martins, R., V. Silva, H. Águas, A. Cabrita, I. Ferreira, and E. Fortunato. "Correlation between the carbon and hydrogen contents with the gas species and the plasma impedance of silicon carbide films produced by PECVD technique." Applied surface science. 184.1 (2001): 101-106. Abstract
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Martins, R., I. Ferreira, A. Cabrita, and E. Fortunato. "Improvement of a-Si: H device stability and performances by proper design of the interfaces." Journal of Non-Crystalline Solids. 266 (2000): 1094-1098. Abstract
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Martins, Rodrigo, P. Barquinha, L. Pereira, N. Correia, G. GONCALVES, I. Ferreira, and E. Fortunato. "Selective floating gate non‐volatile paper memory transistor." physica status solidi (RRL)-Rapid Research Letters. 3.9 (2009): 308-310. Abstract
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Martins, R., A. Macarico, I. Ferreira, R. Nunes, A. Bicho, and E. Fortunato. "Correlation Between Electrical-Optical and Structural Properties of Microcrystalline Silicon N Type Films." MRS Proceedings. 420.1 (1996). Abstract
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Martins, R., D. Costa, H. Águas, F. Soares, A. Marques, I. Ferreira, P. Borges, and E. Fortunato. "Detection Limits of a nip a-Si: H Linear Array Position Sensitive Detector." MRS Proceedings. 808.1 (2004). Abstract
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Martins, R., and I. Ferreira. "Engineering of the energy coupling in PECVD systems used to produce large area a-Si: H coatings." Vacuum. 45.10 (1994): 1107-1108. Abstract
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