<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Raniero, L.</style></author><author><style face="normal" font="default" size="100%">Ferreira, I.</style></author><author><style face="normal" font="default" size="100%">Aguas, H.</style></author><author><style face="normal" font="default" size="100%">Zhang, S.</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Study of a-SiC: H buffer layer on nc-Si/a-Si: H solar cells deposited by PECVD technique</style></title><secondary-title><style face="normal" font="default" size="100%">Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2005</style></year></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pages><style face="normal" font="default" size="100%">1548-1551</style></pages><isbn><style face="normal" font="default" size="100%">0780387074</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">n/a</style></abstract><notes><style face="normal" font="default" size="100%">n/a</style></notes></record></records></xml>