@article {Asal_Kiazadeh_39866727, journal = {Adv. Mater. 2017, 29, 1703079}, year = {Submitted}, note = {n/a}, abstract = {n/a}, author = {Kiazadeh, Asal} } @article {Elias_Pereira_2026, title = {Influence of fabrication parameters on the Schottky barrier modulation of Mo/MoO x /IGZO/Ti/Mo memristor}, journal = {Journal of Physics: Materials}, volume = {9}, number = {1}, year = {2026}, note = {n/a}, pages = {015015}, publisher = {IOP Publishing}, abstract = {n/a}, issn = {2515-7639}, doi = {10.1088/2515-7639/ae35a7}, url = {http://dx.doi.org/10.1088/2515-7639/ae35a7}, author = {Pereira, Maria Elias and Deuermeier, Jonas and Mingates, Tom{\'a}s and Almeida Carvalho, Patr{\'\i}cia and Calmeiro, Tom{\'a}s and Fortunato, Elvira and Martins, Rodrigo and Barquinha, Pedro and Kiazadeh, Asal} } @article {04132c7c811a41a29ad39e5a2f343c59, title = {Printed Zinc Tin Oxide Memristors for Reservoir Computing}, journal = {Advanced Intelligent Systems}, year = {2025}, note = {

info:eu-repo/grantAgreement/FCT/Concurso para Atribui{\c c}{\~a}o do Estatuto e Financiamento de Laborat{\'o}rios Associados (LA)/LA\%2FP\%2F0037\%2F2020/PT\# info:eu-repo/grantAgreement/FCT/Concurso de avalia{\c c}{\~a}o no {\^a}mbito do Programa Plurianual de Financiamento de Unidades de I\&D (2017\%2F2018) - Financiamento Program{\'a}tico/UIDP\%2F50025\%2F2020/PT\# info:eu-repo/grantAgreement/FCT/Concurso de avalia{\c c}{\~a}o no {\^a}mbito do Programa Plurianual de Financiamento de Unidades de I\&D (2017\%2F2018) - Financiamento Base/UIDB\%2F50025\%2F2020/PT\# info:eu-repo/grantAgreement/FCT/OE/2022.13773.BD/PT\# info:eu-repo/grantAgreement/FCT//2021.07840.BD/PT\# info:eu-repo/grantAgreement/FCT/CEEC IND4ed/2021.03825.CEECIND\%2FCP1657\%2FCT0015/PT\# info:eu-repo/grantAgreement/FCT/CEEC IND4ed/2021.03386.CEECIND\%2FCP1657\%2FCT0002/PT\# info:eu-repo/grantAgreement/FCT/3599-PPCDT/2022.08132.PTDC/PT\# info:eu-repo/grantAgreement/FCT/Projetos de IC\&DT Portugal {\'I}ndia/DRI\%2FIndia\%2F0430\%2F2020/PT\# Funding Information: This work was financed by national funds from FCT-Funda{\c c}{\~a}o para a Ci{\^e}ncia e a Tecnologia, I.P., in the scope of the projects LA/P/0037/2020, UIDP/50025/2020, and UIDB/50025/2020 of the Associate Laboratory Institute of Nanostructures, Nanomodelling and Nanofabrication{\textendash}i3N. R.A.M. and C.S. thank the Funda{\c c}{\~a}o para a Ci{\^e}ncia e Tecnologia (FCT) for financial support under the Ph.D. grants (2022.13773.BD and 2021.07840.BD). E.C., A.K., and J.D. acknowledge funding received from FCT via 2021.03825.CEECIND, 2021.03386.CEECIND, and CEECINST/00102/2018, respectively. The authors acknowledge the FCT for funding received with project OPERA via 2022.08132.PTDC and project VOCMemsense via DRI/India/0430/2020. The authors further acknowledge the TERRAMETA project no.10109710. This work also received funding from the HORIZONEIC-2023-PATHFINDERCHALLENGES-01 program, grant agreement no. 101161114 (ELEGANCE). G.M. acknowledges the support of the European Research Council (ERC) under the European Union{\textquoteright}s ERC Staring grant (ERC-2024-STG) agreement {\textquotedblleft}MEMBRAIN{\textquotedblright} no. 101 160 604. Publisher Copyright: {\textcopyright} 2025 The Author(s). Advanced Intelligent Systems published by Wiley-VCH GmbH.

}, publisher = {John Wiley and Sons Inc.}, abstract = {

In this work, fully patterned zinc tin oxide (ZTO) memristors are introduced using inkjet printing. By targeting a scalable, solution-based fabrication approach, highly stable devices with excellent reproducibility and minimal variability are achieved, using ZTO as the active layer, silver (Ag) as the top electrode, and molybdenum as the bottom electrode. The use of sustainable materials like ZTO enhances scalability and environmental compatibility, paving the way for next-generation, low-power neuromorphic computing. The devices successfully fulfill the fundamental criteria for in materia implementation of physical reservoir computing (PRC), including nonlinearity and fading memory property. The devices are successfully trained for classification tasks with MNIST handwritten dataset, achieving 89.4\% accuracy and 86.5\% by processing 4-bit and 5-bit input temporal sequences. The integration of printed memristors into hardware-based PRC architecture simplifies training complexity, making them particularly advantageous for energy-efficient, wearable AI systems.

}, keywords = {fully patterned, memristor, physical reservoir computing, printed memristors, solution-based, zto}, issn = {2640-4567}, doi = {10.1002/aisy.202500450}, author = {\{Azevedo Martins\}, Raquel and Silva, Carlos and Deuermeier, Jonas and Gianluca Milano and Mateo Rosero-Realpe and Carolina Parreira and Fortunato, Elvira and Martins, Rodrigo and Kiazadeh, Asal and Carlos, Emanuel} } @conference {17038, title = {Reconfigurable Intelligent Surfaces for THz: Hardware Impairments and Switching Technologies}, booktitle = {2024 International Conference on Electromagnetics in Advanced Applications (ICEAA)}, year = {2024}, note = {n/a}, month = {sep}, pages = {415{\textendash}420}, publisher = {IEEE}, organization = {IEEE}, abstract = {n/a}, doi = {10.1109/iceaa61917.2024.10701743}, author = {Matos, S{\'e}rgio and Ma, Yihan and Luo, Qi and Deuermeier, Jonas and Lucci, Luca and Gavriilidis, Panagiotis and Kiazadeh, Asal and et al} } @conference {5cc9dd41088e4b22b26460eea89aa998, title = {Concept paper on novel radio frequency resistive switches}, booktitle = {NANOARCH {\textquoteright}23}, series = {Nanoarch: IEEE/ACM International Symposium on Nanoscale Architectures}, year = {2024}, note = {

Funding Information: This work has been (partially) supported by the Smart Networks and Services Joint Undertaking (SNS JU) under the European Union{\textquoteright}s Horizon Europe research and innovation programme under Grant Agreement No 101097101, including top-up funding by UK Research and Innovation (UKRI) under the UK government{\textquoteright}s Horizon Europe funding guarantee. Furthermore, this work was financed by national funds from FCT - Funda{\c c}{\~a}o para a Ci{\^e}ncia e a Tecnologia, I.P., in the scope of the projects LA/P/0037/2020, UIDP/50025/2020 and UIDB/50025/2020 of the Associate Laboratory Institute of Nanos-tructures, Nanomodelling and Nanofabrication {\textendash} i3N and by the grants 2021.03386.CEECIND and CEECINST/00102/2018. Publisher Copyright: {\textcopyright} 2023 Owner/Author.; 18th ACM International Symposium on Nanoscale Architectures, NANOARCH 2023 ; Conference date: 18-12-2023 Through 20-12-2023

}, month = {jan}, pages = {1{\textendash}3}, publisher = {ACM - Association for Computing Machinery}, organization = {ACM - Association for Computing Machinery}, address = {United States}, abstract = {

For reconfigurable radios where the signals can be easily routed from one band to another band, new radio frequency switches (RF) are a fundament. The main factor driving the power consumption of the reconfigurable intelligent system (RIS) is the need for an intermediate device with static power consumption to maintain a certain surface configuration state. Since power usage scales quadratically with the RIS area, there is a relevant interest in mitigating this drawback so that this technology can be applied to everyday objects without needing such a high intrinsic power consumption. Current switch technologies such as PIN diodes, and field effect transistors (FETs) are volatile electronic devices, resulting in high static power. In addition, dynamic power dissipation related to switching event is also considerable. Regarding energy efficiency, non-volatile radio frequency resistive switch (RFRS) concept may be better alternative solution due to several advantages: smaller area, zero-hold voltage, lower actuation bias for operation, short switching time, scalability and capable to be fabricated in the backend-of-line of standard CMOS process.

}, isbn = {979-8-4007-0325-6}, doi = {10.1145/3611315.3633267}, author = {Kiazadeh, Asal and Deuermeier, Jonas and Carlos, Emanuel and Martins, Rodrigo and Matos, S{\'e}rgio and Cardoso, \{F{\'a}bio Martinho\} and Pessoa, \{Lu{\'\i}s Manuel\}}, editor = {Ronald Tetzlaff and Fernando Corinto and Neil Kemp and Alon Ascoli and Andreas M{\"o}gel and Chang, \{Meng-Fan (Marvin)\} and Friedman, \{Joseph S.\} and Siting Liu and Strachan, \{John Paul\} and Stephan Menzel and Tahoori, \{Mehdi B.\} and Martin Ziegler and Jason Eshraghian and Ioannis Messaris and Christian Koitzsch and Thomas Mikolajick and Vasileios Ntinas} } @article {6868d0b09dd046c1aa099fe9c291f8fe, title = {Low-Temperature Solution-Based Molybdenum Oxide Memristors}, journal = {Acs Applied Engineering Materials}, volume = {2}, number = {2}, year = {2024}, note = {

info:eu-repo/grantAgreement/FCT/Concurso de avalia{\c c}{\~a}o no {\^a}mbito do Programa Plurianual de Financiamento de Unidades de I\&D (2017\%2F2018) - Financiamento Base/UIDB\%2F50025\%2F2020/PT\# info:eu-repo/grantAgreement/FCT/Concurso de Projetos de Investiga{\c c}{\~a}o de Car{\'a}ter Explorat{\'o}rio (PeX) em Todos os Dom{\'\i}nios Cient{\'\i}ficos/EXPL\%2FCTM-REF\%2F0978\%2F2021/PT\# info:eu-repo/grantAgreement/FCT//2022.13773.BD/PT\# info:eu-repo/grantAgreement/FCT/CEEC IND4ed/2021.03825.CEECIND\%2FCP1657\%2FCT0015/PT\# info:eu-repo/grantAgreement/FCT/CEEC IND4ed/2021.03386.CEECIND\%2FCP1657\%2FCT0002/PT\# info:eu-repo/grantAgreement/FCT/CEEC INST 2018/CEECINST\%2F00102\%2F2018\%2FCP1567\%2FCT0001/PT\# Funding information: The authors further acknowledge the TERRAMETAproject no. 101097101 and the SUPERIOT projet no.101096021

}, month = {jan}, pages = {298{\textendash}304}, publisher = {ACS - American Chemical Society}, abstract = {n/a}, keywords = {memristor, Molybdenumoxide, MoO3, Self-rectifying, solution-based}, issn = {2771-9545}, doi = {10.1021/acsaenm.3c00535}, author = {RA Martins and Carlos, E and Kiazadeh, A. and RA Martins and Deuermeier, J} } @article {Franco_2024, title = {Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications}, journal = {Advanced Electronic Materials}, volume = {10}, number = {10}, year = {2024}, note = {n/a}, month = {aug}, publisher = {Wiley}, abstract = {n/a}, issn = {2199-160X}, doi = {10.1002/aelm.202400212}, url = {http://dx.doi.org/10.1002/aelm.202400212}, author = {Miguel Franco and Kiazadeh, Asal and Martins, Rodrigo and Lanceros-M{\'e}ndez, Senentxu and Carlos, Emanuel} } @article {0386175136af4ff3adec0b5a246d706a, title = {Inkjet printed IGZO memristors with volatile and non-volatile switching}, journal = {Scientific Reports}, volume = {14}, number = {1}, year = {2024}, note = {

Funding Information: This work was financed by national funds from FCT - Funda{\c c}{\~a}o para a Ci{\^e}ncia e a Tecnologia, I.P., in the scope of the projects LA/P/0037/2020, UIDP/50025/2020 and UIDB/50025/2020 of the Associate Laboratory Institute of Nanostructures, Nanomodelling and Nanofabrication {\textendash} i3N. The authors thank the Funda{\c c}{\~a}o para a Ci{\^e}ncia e Tecnologia (FCT) for financial support under the framework of Strategic Funding grants UID/FIS/04650/2020 and grant SFRH/BD/145741/2019. Financial support from the Basque Government Industry Department under the ELKARTEK program is acknowledged. E. Carlos and A. Kiazadeh acknowledge the Individual Call to Scientific Employment Stimulus{\textemdash}4th Edition (2021. 03825.CEECIND), (2021. 03386.CEECIND) through FCT and J. Deuermeier acknowledges CEECINST/00102/2018. A. Kiazadeh and E. Carlos acknowledge FCT/MCTES, project NeurOxide (PTDC/NAN-MAT/30812/2017) and project Supreme-IT (EXPL/CTM-REF/0978/2021), respectively. The authors acknowledge FCT/MCTES project TORIS (2022.09084.PTDC) and OPERA (2022. 08132.PTDC).~The authors acknowlegde the~SUPERIOT project which~had~received funding from the Smart Networks and Services Joint Undertaking (SNS JU) under the European Union{\textquoteright}s Horizon Europe research and innovation programme under Grant Agreement No 101096021, including funding under the UK government{\textquoteright}s Horizon Europe funding guarantee. Also, the authors acknowledge the TERRAMETA projet which was~(partially) supported by the Smart Networks and Services Joint Undertaking (SNS JU) under the European Union{\textquoteright}s Horizon Europe research and innovation programme under Grant Agreement No 101097101, including top-up funding by UK Research and Innovation (UKRI) under the UK government{\textquoteright}s Horizon Europe funding guarantee. At last, we acknowledge Tom{\'a}s Calmeiro for the AFM characterization. Funding Information: This work was financed by national funds from FCT - Funda{\c c}{\~a}o para a Ci{\^e}ncia e a Tecnologia, I.P., in the scope of the projects LA/P/0037/2020, UIDP/50025/2020 and UIDB/50025/2020 of the Associate Laboratory Institute of Nanostructures, Nanomodelling and Nanofabrication {\textendash} i3N. The authors thank the Funda{\c c}{\~a}o para a Ci{\^e}ncia e Tecnologia (FCT) for financial support under the framework of Strategic Funding grants UID/FIS/04650/2020 and grant SFRH/BD/145741/2019. Financial support from the Basque Government Industry Department under the ELKARTEK program is acknowledged. E. Carlos and A. Kiazadeh acknowledge the Individual Call to Scientific Employment Stimulus{\textemdash}4th Edition (2021. 03825.CEECIND), (2021. 03386.CEECIND) through FCT and J. Deuermeier acknowledges CEECINST/00102/2018. A. Kiazadeh and E. Carlos acknowledge FCT/MCTES, project NeurOxide (PTDC/NAN-MAT/30812/2017) and project Supreme-IT (EXPL/CTM-REF/0978/2021), respectively. The authors acknowledge FCT/MCTES project TORIS (2022.09084.PTDC) and OPERA (2022. 08132.PTDC). The authors acknowlegde the SUPERIOT project which had received funding from the Smart Networks and Services Joint Undertaking (SNS JU) under the European Union{\textquoteright}s Horizon Europe research and innovation programme under Grant Agreement No 101096021, including funding under the UK government{\textquoteright}s Horizon Europe funding guarantee. Also, the authors acknowledge the TERRAMETA projet which was (partially) supported by the Smart Networks and Services Joint Undertaking (SNS JU) under the European Union{\textquoteright}s Horizon Europe research and innovation programme under Grant Agreement No 101097101, including top-up funding by UK Research and Innovation (UKRI) under the UK government{\textquoteright}s Horizon Europe funding guarantee. At last, we acknowledge Tom{\'a}s Calmeiro for the AFM characterization. Publisher Copyright: {\textcopyright} The Author(s) 2024.

}, publisher = {Nature Publishing Group}, abstract = {

Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. Indium-gallium-zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties. In this work, a printed Ag/IGZO/ITO memristor has been fabricated. The IGZO thickness influences both memory window and switching voltage of the devices. The devices show both volatile counter8wise (c8w) and non-volatile 8wise (8w) switching at low operating voltage. The 8w switching has a SET and RESET voltage lower than 2 V and - 5 V, respectively, a retention up to 105 s and a memory window up to 100, whereas the c8w switching shows volatile characteristics with a low threshold voltage (Vth \< - 0.65 V) and a characteristic time (τ) of 0.75 {\textpm} 0.12 ms when a single pulse of - 0.65 V with width of 0.1 ms is applied. The characteristic time alters depending on the number of pulses. These volatile characteristics allowed them to be tested on different 4-bit pulse sequences, as an initial proof of concept for temporal signal processing applications.

}, keywords = {IGZO, inkjet printing, memristor, Printed electronics, Volatile and non-volatile behavior}, issn = {2045-2322}, doi = {10.1038/s41598-024-58228-y}, author = {Miguel Franco and Kiazadeh, Asal and Deuermeier, Jonas and S. Lanceros-M{\'e}ndez and Martins, Rodrigo and Carlos, Emanuel} } @article {Pereira_2024, title = {Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity}, journal = {ACS Applied Electronic Materials}, volume = {6}, number = {7}, year = {2024}, note = {n/a}, pages = {5230{\textendash}5243}, publisher = {American Chemical Society (ACS)}, abstract = {n/a}, issn = {2637-6113}, doi = {10.1021/acsaelm.4c00752}, url = {http://dx.doi.org/10.1021/acsaelm.4c00752}, author = {Pereira, Maria Elias and Deuermeier, Jonas and Martins, Rodrigo and Barquinha, Pedro and Kiazadeh, Asal} } @booklet {17044, title = {Analog ZTO resistive switching devices for neuromorphic applications}, year = {2023}, note = {n/a}, month = {jan}, abstract = {n/a}, author = {Silva, Carlos and Deuermeier, Jonas and Azevedo Martins, Raquel and Pereira, Maria Elias and Martins, Rodrigo and Kiazadeh, Asal} } @conference {8aab5c16d8e54683a3a50ef20e7e11b1, title = {Depletion Based Digital and Analogue Circuits with n-Channel IGZO Thin Film Transistors}, booktitle = {ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems}, series = {IEEE International Symposium on Circuits and Systems (ISCAS)}, year = {2023}, note = {

info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC\%2FNAN-MAT\%2F30812\%2F2017/PT\# info:eu-repo/grantAgreement/FCT/3599-PPCDT/2022.08132.PTDC/PT\# info:eu-repo/grantAgreement/FCT/OE/SFRH\%2FBD\%2F144376\%2F2019/PT\# info:eu-repo/grantAgreement/FCT/CEEC IND4ed/2021.03386.CEECIND\%2FCP1657\%2FCT0002/PT\# Funding Information: ACKNOWLEDGMENT This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT{\textemdash}Portuguese Foundation for Science and Technology under the Ph.D. grant DFA/BD/8335/2020 of the Associate Laboratory Institute of Nanostructures, Nanomodelling and Nanofabrication {\textendash} i3N. Publisher Copyright: {\textcopyright} 2023 IEEE.; 56th IEEE International Symposium on Circuits and Systems, ISCAS 2023 ; Conference date: 21-05-2023 Through 25-05-2023

}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, organization = {Institute of Electrical and Electronics Engineers (IEEE)}, address = {United States}, abstract = {

In this work, both analogue and digital depletion-mode single channel transistor circuits are presented and are simulated using an n-channel IGZO technology with VTH = -0.87V. A logic family is introduced, suppressing the need for an additional voltage level and level restoring circuitry. Furthermore, in the analogue domain, a depletion current mirror topology is presented with demonstrated small current error. Finally, the current mirror is used in the design of an OpAmp, achieving a simulated open-loop gain of 45 dB, CMRR of 58 dB, unity-gain frequency of 444 kHz and a phase margin of 71 degrees.

}, keywords = {analogue circuits, depletion, digital circuits, thin film transistors}, doi = {10.1109/ISCAS46773.2023.10181633}, author = {Guilherme Carvalho and Pereira, Maria and Kiazadeh, Asal and Tavares, \{V{\'\i}tor Grade\}} } @article {Silva_2023, title = {Perspective: Zinc-Tin Oxide Based Memristors for Sustainable and Flexible In-Memory Computing Edge Devices}, journal = {Advanced Electronic Materials}, volume = {9}, number = {11}, year = {2023}, note = {n/a}, publisher = {Wiley}, abstract = {n/a}, issn = {2199-160X}, doi = {10.1002/aelm.202300286}, url = {http://dx.doi.org/10.1002/aelm.202300286}, author = {Silva, Carlos and Deuermeier, Jonas and Zhang, Weidong and Carlos, Emanuel and Barquinha, Pedro and Martins, Rodrigo and Kiazadeh, Asal} } @article {Pereira_2023, title = {Recent progress in optoelectronic memristors for neuromorphic and in-memory computation}, journal = {Neuromorphic Computing and Engineering}, volume = {3}, number = {2}, year = {2023}, note = {n/a}, pages = {022002}, publisher = {IOP Publishing}, abstract = {n/a}, issn = {2634-4386}, doi = {10.1088/2634-4386/acd4e2}, url = {http://dx.doi.org/10.1088/2634-4386/acd4e2}, author = {Pereira, Maria Elias and Martins, Rodrigo and Fortunato, Elvira and Barquinha, Pedro and Kiazadeh, Asal} } @conference {49b14080dd9a429182706cfbbf9550ed, title = {A Segmented DAC Using a-IGZO TFTs for Memristor Based Neural Network Accelerators}, booktitle = {IFETC 2023 - 5th IEEE International Flexible Electronics Technology Conference}, series = {International Flexible Electronics Technology Conference (IFETC)}, year = {2023}, note = {

Publisher Copyright: {\textcopyright} 2023 IEEE.; 5th IEEE International Flexible Electronics Technology Conference, IFETC 2023 ; Conference date: 13-08-2023 Through 16-08-2023

}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, organization = {Institute of Electrical and Electronics Engineers (IEEE)}, address = {United States}, abstract = {

This paper presents a pulse amplitude modulated signal generator to address inference in Memristor based Neural Network Accelerators. As a part of this system, a novel 8-bit capacitive segmented Digital to Analog Converter (DAC) using amorphous Indium Galium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology has been designed. The DAC employs 50\% segmentation with binary coded least significant bits (LSBs) and unary coded most significant bits (MSBs). This circuit has shown an ENOB of 7.3 bits at a sampling frequency of 100 kHz and an input frequency of 50 kHz. The worst case INL and DNL were recorded as 0.047 LSB and 0.34 LSB, respectively. With a power supply voltage of 5 V for the operational amplifier and 3V as the DAC reference voltage, the power consumption of the complete DAC was around 1.25 mW. This circuit can find potential applications in different flexible electronics systems.

}, keywords = {DAC, flexible electronics, Memristors crossbars, Oxide TFTs}, doi = {10.1109/IFETC57334.2023.10254933}, author = {Sagar Das and Suyash Shrivastava and Bahubalindruni, \{Pydi Ganga\} and Kiazadeh, Asal} } @article {Pereira_2022, title = {Tailoring the synaptic properties of a-{IGZO} memristors for artificial deep neural networks}, journal = {{APL} Materials}, volume = {10}, number = {1}, year = {2022}, note = {n/a}, month = {jan}, pages = {011113}, publisher = {{AIP} Publishing}, abstract = {n/a}, doi = {10.1063/5.0073056}, url = {https://doi.org/10.1063\%2F5.0073056}, author = {Pereira, Maria Elias and Deuermeier, Jonas and Pedro Freitas and Barquinha, Pedro and Zhang, Weidong and Martins, Rodrigo and Fortunato, Elvira and Kiazadeh, Asal} } @article {51037892338a43a2aff8148d32193a0b, title = {Characterization and modeling of resistive switching phenomena in IGZO devices}, journal = {AIP Advances}, volume = {12}, number = {8}, year = {2022}, note = {

info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC\%2FNAN-MAT\%2F30812\%2F2017/PT\# info:eu-repo/grantAgreement/FCT/OE/SFRH\%2FBD\%2F144376\%2F2019/PT\# info:eu-repo/grantAgreement/FCT/OE/2021.07840.BD/PT\# Funding Information: This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through the FCT (Portuguese Foundation for Science and Technology) under the scope of the Doctoral Grant No. DFA/BD/8335/2020. Publisher Copyright: {\textcopyright} 2022 Author(s).

}, month = {aug}, publisher = {AIP - American Institute of Physics}, abstract = {

This study explores the resistive switching phenomena present in 4 μm2 amorphous Indium-Gallium-Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the different states of IGZO-based devices. In this article, we demonstrate that resistive switching occurs due to the modulation of the Schottky barrier present at the bottom interface of the device. Furthermore, thermionic field emission and field emission regimes are identified as the dominant conduction mechanisms at the high resistive state of the device, while the bulk-limited ohmic conduction is found at the low resistive state. Due to the high complexity associated with creating compact models of resistive switching, a data-driven model is drafted taking systematic steps.

}, issn = {2158-3226}, doi = {10.1063/5.0098145}, author = {Carvalho, G. and Pereira, \{M. E.\} and C. Silva and Deuermeier, J and Kiazadeh, A. and V. Tavares} } @article {227d404bfe3549ae978d3ae3f33f612d, title = {Emergent solution based IGZO memristor towards neuromorphic applications}, journal = {Journal of Materials Chemistry C}, volume = {10}, number = {6}, year = {2022}, note = {

Funding Information: info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB\%2F50025\%2F2020/PT\# info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC\%2FNAN-MAT\%2F30812\%2F2017/PT\# Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.

}, pages = {1991{\textendash}1998}, publisher = {RSC - Royal Society of Chemistry}, abstract = {

Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 105 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems. This journal is

}, issn = {2050-7534}, doi = {10.1039/d1tc05465a}, author = {Martins, \{Raquel Azevedo\} and Carlos, Emanuel and Deuermeier, Jonas and Pereira, \{Maria Elias\} and Martins, Rodrigo and Fortunato, Elvira and Kiazadeh, Asal} } @article {edf25f80793b4bda9d335c50900c5c22, title = {Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware}, journal = {Advanced Electronic Materials}, volume = {8}, number = {11}, year = {2022}, note = {

info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC\%2FNAN-MAT\%2F30812\%2F2017/PT\# info:eu-repo/grantAgreement/FCT/OE/SFRH\%2FBD\%2F144376\%2F2019/PT\# info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/LA\%2FP\%2F0037\%2F2020/PT\# info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP\%2F50025\%2F2020/PT\# info:eu-repo/grantAgreement/FCT/CEEC IND4ed/2021.03386.CEECIND\%2FCP1657\%2FCT0002/PT\# info:eu-repo/grantAgreement/EC/H2020/716510/EU\# info:eu-repo/grantAgreement/EC/H2020/787410/EU\# info:eu-repo/grantAgreement/EC/H2020/952169/EU\# info:eu-repo/grantAgreement/EC/H2020/101008701/EU\# Funding Information: This research is funded by FEDER funds through the COMPETE 2020 Programme and National Funds through the FCT {\textendash} Portuguese Foundation for Science and Technology, under the scope of the project {\textquotedblleft}NeurOxide{\textquotedblright}, doctoral grants DFA/BD/8335/2020 and projects UIDB/50025/2020-2023. Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.

}, publisher = {Wiley}, abstract = {

Memristor crossbar arrays can compose the efficient hardware for artificial intelligent applications. However, the requirements for a linear and symmetric synaptic weight update and low cycle-to-cycle (C2C) and device-to-device variability as well as the sneak-path current issue have been delaying its further development. This study reports on a thin-film amorphous oxide-based 4{\texttimes}4 1-transistor 1-memristor (1T1M) crossbar. The a-IGZO crossbar is built on a flexible polyimide substrate, enabling IoT and wearable applications. In the novel framework, the thin-film transistor and memristor are fabricated at the same level, with the same processing steps and sharing the same materials for all layers. The 1T1M cells show linear and symmetrical plasticity characteristic with low C2C variability. The memristor performs like an analog dot product engine and vector{\textendash}matrix multiplications in the 4{\texttimes}4 crossbars is demonstrated experimentally, in which the sneak-path current issue is successfully suppressed, resulting in a proof-of-concept for a cost-effective, flexible artificial neural networks hardware.

}, keywords = {1-transistor 1-memristor (1T1M) configuration, a-IGZO, artificial neural networks (ANNs) applications, thin-film active crossbars, vector-matrix multiplications (VMMs) operations}, issn = {2199-160X}, doi = {10.1002/aelm.202200642}, author = {Pereira, \{Maria Elias\} and Deuermeier, Jonas and C{\'a}tia Figueiredo and {\^A}ngelo Santos and Guilherme Carvalho and Tavares, \{V{\'\i}tor Grade\} and Martins, Rodrigo and Fortunato, Elvira and Barquinha, Pedro and Kiazadeh, Asal} } @article {Carvalho_2021, title = {A Neural Network Approach towards Generalized Resistive Switching Modelling}, journal = {Micromachines}, volume = {12}, number = {9}, year = {2021}, note = {n/a}, month = {sep}, pages = {1132}, publisher = {{MDPI} {AG}}, abstract = {n/a}, doi = {10.3390/mi12091132}, url = {https://doi.org/10.3390\%2Fmi12091132}, author = {Guilherme Carvalho and Pereira, Maria and Kiazadeh, Asal and V{\'{\i}}tor Grade Tavares} } @booklet {17053, title = {Amorphous oxide based memristores for neuromorphic applications}, year = {2021}, note = {n/a}, month = {may}, abstract = {n/a}, author = {Silva, Carlos and Jorge Martins and Deuermeier, Jonas and Pereira, Maria Elias and Pedro Freitas and Wei Zhang and Martins, Rodrigo and Fortunato, Elvira and Kiazadeh, Asal} } @booklet {17052, title = {An overview of charge-trapping type switching in mixed transition metal oxide Schottky diodes}, year = {2021}, note = {n/a}, month = {may}, abstract = {n/a}, author = {Deuermeier, Jonas and Maria Elias Lopes Pereira and Jorge Martins and Silva, Carlos and Philipp Wendel and Dominik Dietz and Andreas Klein and et al} } @article {17056, title = {Design and synthesis of low temperature printed metal oxide memristors}, journal = {Journal of Materials Chemistry C}, year = {2021}, note = {n/a}, abstract = {n/a}, doi = {10.1039/d0tc05368f}, url = {http://dx.doi.org/10.1039/d0tc05368f}, author = {Carlos, Emanuel and Deuermeier, Jonas and Branquinho, Rita and Gaspar, Cristina and Martins, Rodrigo and Kiazadeh, Asal and Fortunato, Elvira} } @article {Silva_2021, title = {Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide}, journal = {Electronic Materials}, volume = {2}, number = {2}, year = {2021}, note = {n/a}, pages = {105{\textendash}115}, publisher = {MDPI AG}, abstract = {n/a}, issn = {2673-3978}, doi = {10.3390/electronicmat2020009}, url = {http://dx.doi.org/10.3390/electronicmat2020009}, author = {Silva, Carlos and Jorge Martins and Deuermeier, Jonas and Pereira, Maria Elias and Rovisco, Ana and Barquinha, Pedro and Jo{\~a}o Goes and Martins, Rodrigo and Fortunato, Elvira and Kiazadeh, Asal} } @booklet {17058, title = {Tantalum/Silicon multicomponent oxides for TFTs and synaptic devices}, year = {2020}, note = {n/a}, month = {nov}, abstract = {n/a}, author = {Jorge Martins and Kiazadeh, Asal and Rovisco, Ana and Pinto, Joana V. and Deuermeier, Jonas and Fortunato, Elvira and Martins, Rodrigo and Barquinha, Pedro} } @article {Carlos_2020, title = {Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices}, journal = {Advanced Materials}, volume = {33}, number = {7}, year = {2020}, note = {n/a}, month = {dec}, publisher = {Wiley}, abstract = {n/a}, issn = {1521-4095}, doi = {10.1002/adma.202004328}, url = {http://dx.doi.org/10.1002/adma.202004328}, author = {Carlos, Emanuel and Branquinho, Rita and Martins, Rodrigo and Kiazadeh, Asal and Fortunato, Elvira} } @article {f4d344ab7c0b43b6840fb7b3a8e762c8, title = {Ta2O5/SiO2 Multicomponent Dielectrics for Amorphous Oxide TFTs}, journal = {Electronic Materials}, volume = {2}, number = {1}, year = {2020}, note = {n/a}, month = {dec}, pages = {1{\textendash}16}, publisher = {MDPI - Multidisciplinary Digital Publishing Institute}, abstract = {

Co-sputtering of SiO2 and high-κ Ta2O5 was used to make multicomponent gate dielectric stacks for In-Ga-Zn-O thin-film transistors (IGZO TFTs) under an overall low thermal budget (T = 150 {\textdegree}C). Characterization of the multicomponent layers and of the TFTs working characteristics (employing them) was performed in terms of static performance, reliability, and stability to understand the role of the incorporation of the high-κ material in the gate dielectric stack. It is shown that inherent disadvantages of the high-κ material, such as poorer interface properties and poor gate insulation, can be counterbalanced by inclusion of SiO2 both mixed with Ta2O5 and as thin interfacial layers. A stack comprising a (Ta2O5)x(SiO2)100 - x film with x = 69 and a thin SiO2 film at the interface with IGZO resulted in the best performing TFTs, with field-effect mobility ({\textmu}FE) ≈ 16 cm2·V-1·s-1, subthreshold slope (SS) ≈ 0.15 V/dec and on/off ratio exceeding 107. Anomalous Vth shifts were observed during positive gate bias stress (PGBS), followed by very slow recoveries (time constant exceeding 8 {\texttimes} 105 s), and analysis of the stress and recovery processes for the different gate dielectric stacks showed that the relevant mechanism is not dominated by the interfaces but seems to be related to the migration of charged species in the dielectric. The incorporation of additional SiO2 layers into the gate dielectric stack is shown to effectively counterbalance this anomalous shift. This multilayered gate dielectric stack approach is in line with both the large area and the flexible electronics needs, yielding reliable devices with performance suitable for successful integration on new electronic applications.

}, keywords = {anomalous Vth shift, high-κ dielectrics, multicomponent dielectrics, Ta2O5/SiO2, TFTs}, issn = {2673-3978}, doi = {10.3390/electronicmat2010001}, author = {Jorge Martins and Kiazadeh, Asal and Pinto, \{Joana V.\} and Rovisco, Ana and Tiago Gon{\c c}alves and Deuermeier, Jonas and Alves, Eduardo and Martins, Rodrigo and Fortunato, Elvira and Barquinha, Pedro} } @article {adb9405d77ad4449bbb6c930d0e26055, title = {Noble-Metal-Free Memristive Devices Based on IGZO for Neuromorphic Applications}, journal = {Advanced Electronic Materials}, volume = {6}, number = {10}, year = {2020}, note = {

info:eu-repo/grantAgreement/FCT/5876/147333/PT\# info:eu-repo/grantAgreement/EC/H2020/787410/EU\# project {"}NeurOxide,{"} Reference PTDC/NAN-MAT/30812/2017. The authors acknowledge the Norwegian Research Council for the support to the NorFab (245963/F50) and NorTEM (197405/F50) research infrastructures.

}, publisher = {Wiley}, abstract = {

Amorphous indium-gallium-zinc-oxide (a-IGZO) based memristive devices with molybdenum contacts as both top and bottom electrodes are presented aiming to be used in neuromorphic applications. Devices down to 4 {\textmu}m2 are fabricated using conventional photolithography processes, with an extraordinary yield of 100\%. X-ray photoelectron spectroscopy and transmission electron microscopy performed on the developed structures confirm the presence of a thin intermixed oxide layer (4{\textendash}5~nm) containing Mo6+ oxidation state at the interface with the bottom contact. This results in Schottky diode-like characteristics at the pristine state with a rectification ratio of 3 orders of magnitude. The devices have electroforming-free and area-dependent analog resistive switching properties. Temperature analysis of resistive switching I{\textendash}V data reveals barrier height variations of the junction. Several synaptic functions, such as synaptic potentiation and depression as response to programmed pulses, short- to long-term plasticity transition (STP to LTP) and {\textquotedblleft}learning experience{\textquotedblright} properties are presented. The Mo/IGZO/Mo memristive device shows potential application of an electronic synapse for brain-inspired computing application. Integration in System-on-Panel architectures is possible at negligible cost, because all materials are used in commercial IGZO thin-film transistor fabrication.

}, keywords = {amorphous In-Ga-Zn-O (a-IGZO), amorphous oxide semiconductors (AOS), artificial synapses, Internet of Things, memristive devices}, issn = {2199-160X}, doi = {10.1002/aelm.202000242}, author = {Pereira, Maria and Deuermeier, Jonas and Ricardo Nogueira and Carvalho, \{Patricia Almeida\} and Martins, Rodrigo and Fortunato, Elvira and Kiazadeh, Asal} } @booklet {17061, title = {Low power electronics based on Parylene-C hybrid devices: top gate vs bottom gate TFTs}, year = {2019}, note = {n/a}, month = {jan}, abstract = {n/a}, doi = {10.7567/ssdm.1994.a-3-3}, author = {Pinto, Joana V. and C.F. Fernandes and In{\^e}s Martins and Rovisco, Ana and Jorge Martins and Kiazadeh, Asal and Barquinha, Pedro and Martins, Rodrigo and Fortunato, Elvira} } @booklet {17062, title = {NeurOXide}, year = {2019}, note = {n/a}, month = {jan}, abstract = {n/a}, url = {https://sites.fct.unl.pt/neuroxide}, author = {Kiazadeh, Asal} } @article {Casa_Branca_2019, title = {2D Resistive Switching Based on Amorphous Zinc{\textendash}Tin Oxide Schottky Diodes}, journal = {Advanced Electronic Materials}, volume = {6}, number = {2}, year = {2019}, note = {n/a}, month = {dec}, publisher = {Wiley}, abstract = {n/a}, issn = {2199-160X}, doi = {10.1002/aelm.201900958}, url = {http://dx.doi.org/10.1002/aelm.201900958}, author = {Casa Branca, Nuno and Deuermeier, Jonas and Jorge Martins and Carlos, Emanuel and Pereira, Maria and Martins, Rodrigo and Fortunato, Elvira and Kiazadeh, Asal} } @article {Ambrosi_2019, title = {Electrochemical metallization {ReRAMs} ({ECM}) - Experiments and modelling: general discussion}, journal = {Faraday Discussions}, volume = {213}, year = {2019}, note = {n/a}, pages = {115{\textendash}150}, publisher = {Royal Society of Chemistry ({RSC})}, abstract = {n/a}, doi = {10.1039/c8fd90059k}, url = {https://doi.org/10.1039\%2Fc8fd90059k}, author = {Elia Ambrosi and Philip Bartlett and Alexandra I. Berg and Stefano Brivio and Geoffrey Burr and Sweety Deswal and Deuermeier, Jonas and Masa-aki Haga and Kiazadeh, Asal and Gabriela Kissling and Michael Kozicki and Cina Foroutan-Nejad and Ella Gale and Yago Gonzalez-Velo and Anouk Goossens and Ludovic Goux and Tsuyoshi Hasegawa and Hans Hilgenkamp and Ruomeng Huang and Sherif Ibrahim and Daniele Ielmini and Anthony J. Kenyon and Vladimir Kolosov and Yang Li and Sayani Majumdar and Gianluca Milano and Themis Prodromakis and Niloufar Raeishosseini and Vikas Rana and Carlo Ricciardi and Monica Santamaria and Alexander Shluger and Ilia Valov and Rainer Waser and R. Stanley Williams and Dirk Wouters and Yuchao Yang and Andrea Zaffora} } @inbook {17064, title = {Flexible and transparent ReRAM devices for system on panel (SOP) application}, year = {2019}, note = {n/a}, pages = {519{\textendash}538}, publisher = {Elsevier}, organization = {Elsevier}, edition = {2}, abstract = {n/a}, doi = {10.1016/b978-0-08-102584-0.00014-0}, url = {http://dx.doi.org/10.1016/b978-0-08-102584-0.00014-0}, author = {Kiazadeh, Asal and Deuermeier, Jonas} } @article {Kiazadeh2019, title = {Multi-level cell properties of a bilayer Cu2O/Al2O3 resistive switching device}, journal = {Nanomaterials}, volume = {9}, number = {2}, year = {2019}, note = {n/a}, abstract = {n/a}, author = {Deuermeier, J and Kiazadeh, A. and Klein, A. and Martins, R. and Fortunato, E.} } @article {Kiazadeh2019, title = {Synaptic and neuromorphic functions: General discussion}, journal = {Faraday Discussions}, volume = {213}, year = {2019}, note = {n/a}, pages = {553-578}, abstract = {n/a}, author = {Berg, A.I. and Brivio, S. and Brown, S. and Burr, G. and Deswal, S. and Deuermeier, J and Gale, E. and Hwang, H. and Ielmini, D. and Indiveri, G. and Kenyon, A.J. and Kiazadeh, A. and K{\"o}ymen, I. and Kozicki, M. and Li, Y. and Mannion, D. and Prodromakis, T. and Ricciardi, C. and Siegel, S. and Speckbacher, M. and Valov, I. and Wang, W. and Williams, R.S. and Wouters, D. and Yang, Y.} } @article {Kiazadeh2019, title = {Valence change ReRAMs (VCM) - Experiments and modelling: General discussion}, journal = {Faraday Discussions}, volume = {213}, year = {2019}, note = {n/a}, pages = {259-286}, abstract = {n/a}, author = {Aono, M. and Baeumer, C. and Bartlett, P. and Brivio, S. and Burr, G. and Burriel, M. and Carlos, E and Deswal, S. and Deuermeier, J and Dittmann, R. and Du, H. and Gale, E. and Hambsch, S. and Hilgenkamp, H. and Ielmini, D. and Kenyon, A.J. and Kiazadeh, A. and Kindsm{\"u}ller, A. and Kissling, G. and K{\"o}ymen, I. and Menzel, S. and Pla Asesio, D. and Prodromakis, T. and Santamaria, M. and Shluger, A. and Thompson, D. and Valov, I. and Wang, W. and Waser, R. and Williams, R.S. and Wrana, D. and Wouters, D. and Yang, Y. and Zaffora, A.} } @article {Carlos_2018, title = {Critical role of a double-layer configuration in solution-based unipolar resistive switching memories}, journal = {Nanotechnology}, year = {2018}, note = {n/a}, month = {jun}, publisher = {{IOP} Publishing}, abstract = {n/a}, doi = {10.1088/1361-6528/aac9fb}, url = {https://doi.org/10.1088\%2F1361-6528\%2Faac9fb}, author = {Carlos, Emanuel and Kiazadeh, Asal and Deuermeier, Jonas and Branquinho, Rita and Martins, Rodrigo and Fortunato, Elvira} } @article {Rosa_2017, title = {Memristors Using Solution-Based {IGZO} Nanoparticles}, journal = {{ACS} Omega}, volume = {2}, number = {11}, year = {2017}, note = {n/a}, month = {nov}, pages = {8366{\textendash}8372}, publisher = {American Chemical Society ({ACS})}, abstract = {n/a}, doi = {10.1021/acsomega.7b01167}, url = {https://doi.org/10.1021\%2Facsomega.7b01167}, author = {Jose Rosa and Kiazadeh, Asal and L{\'{\i}}dia Santos and Deuermeier, Jonas and Martins, Rodrigo and Henrique Leonel Gomes and Fortunato, Elvira} } @article {Kiazadeh2017, title = {?Electro-Typing? on a Carbon-Nanoparticles-Filled Polymeric Film using Conducting Atomic Force Microscopy}, journal = {Advanced Materials}, volume = {29}, number = {47}, year = {2017}, note = {n/a}, abstract = {n/a}, author = {Goswami, S. and Nandy, S. and Banerjee, A.N. and Kiazadeh, A. and Dillip, G.R. and Pinto, JV and Joo, S.W. and Martins, R. and Fortunato, E.} } @article {Kiazadeh2017, title = {Bias stress and temperature impact on InGaZnO TFTs and circuits}, journal = {Materials}, volume = {10}, number = {6}, year = {2017}, note = {n/a}, abstract = {n/a}, author = {J. Martins and Bahubalindruni, P. and Rovisco, A. and Kiazadeh, A. and Martins, R. and Fortunato, E. and Barquinha, P.} } @article {Kiazadeh2017, title = {Boosting Electrical Performance of High-? Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation}, journal = {ACS Applied Materials and Interfaces}, volume = {9}, number = {46}, year = {2017}, note = {n/a}, pages = {40428-40437}, abstract = {n/a}, author = {Carlos, E and Branquinho, R. and Kiazadeh, A. and J. Martins and Barquinha, P. and Martins, R. and Fortunato, E.} } @article {Asal_Kiazadeh_38412046, title = {Memristors Using Solution-Based IGZO Nanoparticles}, journal = {ACSOmega 2017, 2, 8366 - 837}, year = {2017}, note = {n/a}, abstract = {n/a}, author = {Kiazadeh, Asal} } @article {Kiazadeh2017, title = {Solution based zinc tin oxide TFTs: The dual role of the organic solvent}, journal = {Journal of Physics D: Applied Physics}, volume = {50}, number = {6}, year = {2017}, note = {n/a}, abstract = {n/a}, author = {Salgueiro, D and Kiazadeh, A. and Branquinho, R. and Santos, L and Barquinha, P. and Martins, R. and Fortunato, E.} } @conference {14c0537680454ed1bc5c9f65ee056b44, title = {FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs}, year = {2016}, note = {

Sem PDF.; E-MRS 2016 Spring Meeting, E-MRS 2016 Spring Meeting ; Conference date: 02-05-2016 Through 06-05-2016

}, month = {may}, abstract = {

Solution processing of amorphous metal oxides has been lately used as an option to implement in flexible electronics allowing a reduction of the associated costs and increased performance. However the research has focused more on semiconductor layer rather than on the insulator layer that is related to the stability andperformance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far ultraviolet (FUV) irradiation on properties of the insulator on thin film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. [1{\textendash}3] Optimized dielectric layer was obtained for an annealing of 30 minutes assisted by FUV exposure.

}, url = {http://www.european-mrs.com/meetings/2016-spring-meeting}, author = {Carlos, Emanuel and Branquinho, Rita and Kiazadeh, Asal and Barquinha, \{Pedro Miguel C{\^a}ndido\} and Martins, \{Rodrigo Ferr{\~a}o de Paiva\} and Fortunato, \{Elvira Maria Correia\}} } @booklet {17076, title = {TCAD simulation of short-channel effects in IGZO TFTs}, year = {2016}, note = {n/a}, month = {jun}, abstract = {n/a}, author = {Jorge Martins and Bahubalindruni, Ganga and Sacchetti, Allegra and Rovisco, Ana and Kiazadeh, Asal and Fortunato, Elvira and Martins, Rodrigo and Barquinha, Pedro and Bahubalindruni, Pydi Ganga} } @article {Kiazadeh2016, title = {Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors}, journal = {Applied Physics Letters}, volume = {109}, number = {5}, year = {2016}, note = {n/a}, abstract = {n/a}, author = {Kiazadeh, A. and Gomes, H. L. and Barquinha, P. and J. Martins and Rovisco, A. and Pinto, JV and Martins, R. and Fortunato, E.} } @article {Kiazadeh2016, title = {Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance}, journal = {Journal of Display Technology}, volume = {12}, number = {6}, year = {2016}, note = {n/a}, pages = {515-518}, abstract = {n/a}, author = {Bahubalindruni, P.G. and Kiazadeh, A. and Sacchetti, A. and J. Martins and Rovisco, A. and Tavares, V.G. and Martins, R. and Fortunato, E. and Barquinha, P.} } @booklet {Asal_Kiazadeh_36492856, title = {Solution-based IGZO nanoparticles memristor}, journal = {Thesis-University of Nova de Lisboa}, year = {2016}, note = {n/a}, abstract = {n/a}, author = {Kiazadeh, Asal} } @article {Kiazadeh2016, title = {Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al 2 O 3 interface}, journal = {Materials Research Express}, volume = {3}, number = {4}, year = {2016}, note = {n/a}, abstract = {n/a}, author = {Deuermeier, J and Bayer, T.J.M. and Yanagi, H. and Kiazadeh, A. and Martins, R. and Klein, A. and Fortunato, E.} } @article {Kiazadeh2016, title = {UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors}, journal = {ACS Applied Materials and Interfaces}, volume = {8}, number = {45}, year = {2016}, note = {n/a}, pages = {31100-31108}, abstract = {n/a}, author = {Carlos, E and Branquinho, R. and Kiazadeh, A. and Barquinha, P. and Martins, R. and Fortunato, E.} } @article {Kiazadeh2015, title = {Operational stability of solution based zinc tin oxide/SiO\<inf\>2\</inf\> thin film transistors under gate bias stress}, journal = {APL Materials}, volume = {3}, number = {6}, year = {2015}, note = {n/a}, abstract = {n/a}, author = {Kiazadeh, A. and Salgueiro, D and Branquinho, R. and Pinto, J. and Gomes, H. L. and Barquinha, P. and Martins, R. and Fortunato, E.} } @article {Kiazadeh2015, title = {Towards environmental friendly solution-based ZTO/AlO x TFTs}, journal = {Semiconductor Science and Technology}, volume = {30}, number = {2}, year = {2015}, note = {n/a}, abstract = {n/a}, author = {Branquinho, R. and Salgueiro, D and Santa, A. and Kiazadeh, A. and Barquinha, P. and Pereira, L. and Martins, R. and Fortunato, E.} } @booklet {Asal_Kiazadeh_33491418, title = {Advances in non-volatile memory and storage technology}, journal = {Book chapter}, year = {2014}, note = {n/a}, abstract = {n/a}, author = {Kiazadeh, Asal} } @book {2b5c7e5309c343c98406766eb559facc, title = {Advances in non-volatile memory and storage technology: Molcular, Polymer and Hybrid Organic Memory Devices}, year = {2014}, note = {

sem pdf.

}, publisher = {Woodhead Publishing}, organization = {Woodhead Publishing}, address = {United Kingdom}, abstract = {

Organic electronic and polymer memory devices offer the potential for cheap, simple memories that could compete across the whole spectrum of digital memories, from low cost, low performance applications, up to universal memories capable of replacing all current market leading technologies, such as random access memories, hard disk drives and Flash memories. Organic memory devices (OMDs) are simple, two terminal metal-insulator-metal (MIM) bi-stable devices that can exist in two distinct conductivity states. Each state is induced by applying different voltages across the device terminals. Here we review the developing methods for the integration and interfacing of molecular components that have been found for the performing information functions (memory, processing) on a molecular scale.

}, author = {Kiazadeh, Asal and Gomes, H. L.} } @mastersthesis {17086, title = {Fabrication and characterization of memory devices based on nanoparticles}, year = {2013}, note = {n/a}, type = {phd}, abstract = {n/a}, keywords = {Dom{\'\i}nio/{\'A}rea Cient{\'\i}fica::Engenharia e Tecnologia::Engenharia Eletrot{\'e}cnica, Eletr{\'o}nica, Eletr{\'o}nica e Inform{\'a}tica, Mem{\'o}rias, Nanopart{\'\i}culas, Optoeletr{\'o}nica, Resist{\^e}ncias el{\'e}tricas, Tens{\~a}o}, url = {http://hdl.handle.net/10400.1/7739}, author = {Kiazadeh, Asal} } @article {Kiazadeh2013, title = {The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories}, journal = {Journal of Applied Physics}, volume = {113}, number = {13}, year = {2013}, note = {n/a}, abstract = {n/a}, author = {Rocha, P.R.F. and Kiazadeh, A. and De Leeuw, D.M. and Meskers, S.C.J. and Verbakel, F. and Taylor, D.M. and Gomes, H. L.} } @article {Kiazadeh2012, title = {Dynamic behavior of Resistive Random Access Memories (RRAMS) based on plastic semiconductor}, journal = {IFIP Advances in Information and Communication Technology}, volume = {372 AICT}, year = {2012}, note = {n/a}, pages = {535-540}, abstract = {n/a}, author = {Rocha, P.R.F. and Kiazadeh, A. and Chen, Q. and Gomes, H. L.} } @article {Kiazadeh2012, title = {Electroforming process in metal-oxide-polymer resistive switching memories}, journal = {IFIP Advances in Information and Communication Technology}, volume = {372 AICT}, year = {2012}, note = {n/a}, pages = {527-534}, abstract = {n/a}, author = {Chen, Q. and Gomes, H. L. and Kiazadeh, A. and Rocha, P.R.F. and De Leeuw, D.M. and Meskers, S.C.J.} } @article {Kiazadeh2012, title = {Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles}, journal = {Thin Solid Films}, volume = {522}, year = {2012}, note = {n/a}, pages = {407-411}, abstract = {n/a}, author = {Kiazadeh, A. and Gomes, H. L. and Da Costa, A.M.R. and Moreira, J.A. and De Leeuw, D.M. and Meskers, S.C.J.} } @article {Kiazadeh2012, title = {Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure}, journal = {IEEE Transactions on Electron Devices}, volume = {59}, number = {9}, year = {2012}, note = {n/a}, pages = {2483-2487}, abstract = {n/a}, author = {Rocha, P.R.F. and Gomes, H. L. and Vandamme, L.K.J. and Chen, Q. and Kiazadeh, A. and De Leeuw, D.M. and Meskers, S.C.J.} } @article {Kiazadeh2012, title = {New electronic memory device concepts based on metal oxide-polymer nanostructures planer diodes}, journal = {IFIP Advances in Information and Communication Technology}, volume = {372 AICT}, year = {2012}, note = {n/a}, pages = {521-526}, abstract = {n/a}, author = {Kiazadeh, A. and Rocha, P.R.F. and Chen, Q. and Gomes, H. L.} } @article {6da179d62f004bc7a355332d4db70bc3, title = {Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode}, journal = {Journal Of Physics D-Applied Physics}, volume = {44}, number = {2}, year = {2011}, note = {

Cited By :4 Export Date: 6 June 2017 CODEN: JPAPB Correspondence Address: Gomes, H. L.; Center of Electronics Optoelectronics and Telecommunications (CEOT), Universidade Do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal; email: hgomes@ualg.pt References: Scott, J.C., Bozano, L.D., (2007) Adv. Mater., 19, p. 1452; Verbakel, F., Meskers, S.C.J., Janssen, R.A.J., Gomes, H.L., C{\"o}lle, M., B{\"u}chel, M., De Leeuw, D.M., (2007) Appl. Phys. Lett., 91, p. 192103; Beck, A., Bednorz, J.G., Gerber, C., Rossel, C., Widmer, D., (2000) Appl. Phys. Lett., 77, p. 139; Waser, R., Aono, M., (2007) Nature Mater., 6, p. 833; Karth{\"a}user, S., L{\"u}ssem, B., Weides, M., Alba, M., Besmehn, A., Oligschlaeger, R., Waser, R., (2006) J. Appl. Phys., 100, p. 094504; Oyamada, T., Tanaka, H., Matsushige, K., Sasabe, H., Adachi, C., (2003) Appl. Phys. Lett., 83, p. 1252; Gomes, H.L., Benvenho, A.R.V., De Leeuw, D.M., C{\"o}lle, M., Stallinga, P., Verbakel, F., Taylor, D.M., (2008) Organic Electron., 9, p. 119; C{\"o}lle, M., B{\"u}chel, M., De Leeuw, D.M., (2006) Organic Electron., 7, p. 305; Dearnaley, G., Morgan, D.V., Stoneham, A.M., (1970) J. Non-Cryst. Solids, 4, p. 593; Dearnaley, G., Stoneham, A.M., Morgan, D.V., (1970) Rep. Prog. Phys., 33, p. 1129; Thurstans, R.E., Oxley, D.P., (2002) J. Phys. D: Appl. Phys., 35, p. 802; Simmons, J.G., Verderber, R.R., (1967) Proc. R. Soc. Lond. A, 301, p. 77; Bozano, L.D., Kean, B.W., Deline, V.R., Salem, J.R., Scott, J.C., (2004) Appl. Phys. Lett., 84, p. 607; Tondelier, D., Lmimouni, K., Vuillame, D., Fery, C., Haas, G., (2004) Appl. Phys. Lett., 85, p. 5763; Chen, L., Xia, Y., Liang, X., Yin, K., Yin, J., Liu, Z., Chen, Y., (2007) Appl. Phys. Lett., 91, p. 073511; Joo, W.J., Choi, T.L., Lee, K.H., Chung, Y., (2007) J. Phys. Chem. B, 111, p. 7756; Gomes, H.L., Stallinga, P., C{\"o}lle, M., De Leeuw, D.M., Biscarini, F., (2006) Appl. Phys. Lett., 88, p. 082101; Debenedetti, P.G., (2003) J. Phys.: Condens. Matter, 15, pp. R1669; Mishima, O., Stanley, H.E., (1988) Nature, 392, p. 164; Ma, L., Xu, Q., Yang, Y., (2004) Appl. Phys. Lett., 84, p. 4908

}, publisher = {Institute of Physics Publishing}, abstract = {

Metal-oxide polymer diodes exhibit non-volatile resistive switching. The current-voltage characteristics have been studied as a function of temperature. The low-conductance state follows a thermally activated behaviour. The high-conductance state shows a multistep-like behaviour and below 300K an enormous positive temperature coefficient. This anomalous behaviour contradicts the widely held view that switching is due to filaments that are formed reversibly by the diffusion of metal atoms. Instead, these findings together with small-signal impedance measurements indicate that creation and annihilation of filaments is controlled by filling of shallow traps localized in the oxide or at the oxide/polymer interface. {\textcopyright} 2011 IOP Publishing Ltd.

}, keywords = {Conductance state, Creation and annihilation, Current voltage characteristics, High conductance state, Impedance measurement, Metal atoms, Metal-oxide, Multi-step, Non-volatile, Polymer diode, Resistive switching, Shallow traps, Small signal, Switching systems, Temperature dependence, Thermally activated behaviour}, issn = {0022-3727}, doi = {10.1088/0022-3727/44/2/025103}, author = {Gomes, H. L. and Rocha, P.R.F. and Kiazadeh, A. and \{De Leeuw\}, D.M. and Meskers, S.C.J.} } @article {Kiazadeh2011, title = {Non-volatile memory device using a polymer modified nanocrystal}, journal = {Materials Science and Engineering B: Solid-State Materials for Advanced Technology}, volume = {176}, number = {19}, year = {2011}, note = {n/a}, pages = {1552-1555}, abstract = {n/a}, author = {Kiazadeh, A. and Gomes, H. L. and Da Costa, A.M.R. and Moreira, J.A. and De Leeuw, D.M. and Meskers, S.C.J.} } @article {Kiazadeh2011, title = {Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes}, journal = {Applied Physics Letters}, volume = {99}, number = {8}, year = {2011}, note = {n/a}, abstract = {n/a}, author = {Chen, Q. and Bory, B.F. and Kiazadeh, A. and Rocha, P.R.F. and Gomes, H. L. and Verbakel, F. and De Leeuw, D.M. and Meskers, S.C.J.} } @article {Kiazadeh2011, title = {Planar non-volatile memory based on metal nanoparticles}, journal = {Materials Research Society Symposium Proceedings}, volume = {1337}, year = {2011}, note = {n/a}, pages = {151-156}, abstract = {n/a}, author = {Kiazadeh, A. and Gomes, H. L. and Da Costa, A.R. and Rocha, P. and Chen, Q. and Moreira, J.A. and De Leeuw, D.M. and Meskers, S.C.J.} } @article {Kiazadeh2011, title = {Resistive Random Access Memories (RRAMs) based on metal nanoparticles}, journal = {IFIP Advances in Information and Communication Technology}, volume = {349 AICT}, year = {2011}, note = {n/a}, pages = {591-595}, abstract = {n/a}, author = {Kiazadeh, A. and Rocha, P.R. and Chen, Q. and Gomes, H. L.} } @article {Kiazadeh2011, title = {Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor}, journal = {Materials Research Society Symposium Proceedings}, volume = {1337}, year = {2011}, note = {n/a}, pages = {97-102}, abstract = {n/a}, author = {Rocha, P.F. and Gomes, H. L. and Kiazadeh, A. and Chen, Q. and De Leeuw, D.M. and Meskers, S.C.J.} } @conference {17099, title = {Electronic memory devices based on metal nanoparticles}, year = {2010}, note = {n/a}, address = {Braga}, abstract = {n/a}, author = {Kiazadeh, Asal and Gomes, Henrique L. and Rosa da Costa, Ana M. and Moreira, Jos{\'e} A. and de Leeuw, Dago M. and Meskers, Stefan C. J.} } @book {17100, title = {Collection of tests in electronics for first year students of science and technology university (Bestselling national educational book in 2014)}, year = {2009}, note = {n/a}, publisher = {Adna Publications}, organization = {Adna Publications}, abstract = {n/a}, author = {Kiazadeh, Asal} } @booklet {17101, title = {Iranian national patent of production process of smart air filters based on nanoparticles- 014721-A/85}, number = {014721-A/85}, year = {2008}, note = {n/a}, month = {jan}, abstract = {n/a}, author = {Kiazadeh, Asal} }