<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Lavareda, G</style></author><author><style face="normal" font="default" size="100%">de Calheiros Velozo, A.</style></author><author><style face="normal" font="default" size="100%">Nunes de Carvalho, C</style></author><author><style face="normal" font="default" size="100%">Amaral, A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">p/n junction depth control using amorphous silicon as a low temperature dopant source</style></title><secondary-title><style face="normal" font="default" size="100%">THIN SOLID FILMS</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2013</style></year><pub-dates><date><style  face="normal" font="default" size="100%">SEP 30</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">Univ Roma Tor Vergata; Im2np; European Off Aerosp Res &amp; Dev; Consiglio Nazl Ric; Queensland Univ Technol, Solar Powered Nano Sensors; FEI; 5Pascal; CNISM; Vacuum Sci; Orsay Phys; Omicron; Ctr Nationale Rech Sci; Consorzio Nazl Interuniversitario Sci Fisic</style></publisher><volume><style face="normal" font="default" size="100%">543</style></volume><pages><style face="normal" font="default" size="100%">122-124</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Phosphorus-doped amorphous silicon thin films, deposited at low temperatures by Plasma Enhanced Chemical Vapour Deposition were used as a dopant source on p-type c-Si substrates. A careful step of dehydrogenation was done in order to maintain the a-Si thin-film integrity. Subsequently, a fine-controlled drive-in of dopant, from the amorphous layer to the crystalline wafer was done, to form the p/n junction, using different time periods and temperatures. Dopant profiling in c-Si wafers as well as dopant concentration in a-Si: H films prior to diffusion, both measured by Secondary Ion Mass Spectrometry, are presented. Junction depths obtained are in the range of 98 nm to 2.4 mu m and surface concentrations are in the range of 1.1 x 10(21) to 4.3 x 10(20) at/cm(3). A dual diffusion mechanism explains the ``kink-and-tail{''} shape found for dopant profile. (C) 2013 Elsevier B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;4th International Conference on Nanostructures Self-Assembly (NANOSEA), ITALY, JUN 25-29, 2012&lt;/p&gt;
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