<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">L. Ricardo</style></author><author><style face="normal" font="default" size="100%">Amaral, A.</style></author><author><style face="normal" font="default" size="100%">de Carvalho, C. Nunes</style></author><author><style face="normal" font="default" size="100%">Lavareda, G</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Dopant transfer from poly-si thin films to c-Si: An alternative technique for device processing</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Science in Semiconductor Processing</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><volume><style face="normal" font="default" size="100%">42</style></volume><pages><style face="normal" font="default" size="100%">210-214</style></pages><abstract><style face="normal" font="default" size="100%">&lt;p&gt;An alternative technique for production of devices which uses both silicon crystalline wafers (p-type) and heavy doped amorphous silicon thin films (n-type) is reported. The amorphous silicon acts as a finite source of dopant and is deposited (at low temperature, 70 °C) by plasma enhanced chemical vapor deposition on silicon wafers. Afterwards, the process of dopant diffusion into the crystalline silicon occurs in a diffusion furnace at 1000 °C for 2 h, to create p–n junctions. Using SIMS analyses, a dopant (P) transfer into c-Si of about 30% is verified and 87% of the dopant transferred is electrically active. Consequently, n-MOSFET devices are produced using a gate oxide thermally grown at the same diffusion temperature for one hour. The preliminary results of the MOSFET (channel length and width of 0.5 and 5 mm, respectively) show a depletion behavior with a threshold voltage, Vth=−8.2 V and afield-effect mobility, µ&lt;sub&gt;FE&lt;/sub&gt;=187.8 cm&lt;sup&gt;2&lt;/sup&gt;/(Vs).&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">2</style></issue></record></records></xml>