@article { ISI:000280719200027,
	title = {Optoelectronic properties of transparent p-type semiconductor CuxS thin films},
	journal = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE},
	volume = {207},
	number = {7},
	year = {2010},
	note = {<p>Symposium on Advances in Transparent Electronics held at the 2009 EMRS Spring Meeting, Strasbourg, FRANCE, JUN 08-12, 2009</p>
},
	month = {JUL},
	pages = {1652-1654},
	publisher = {European Mat Res Soc},
	abstract = {<p>Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p-type narrow-band-gap material with an average optical transmittance of about 60\% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu2S thin films with 10 nm in thickness have an optical visible transmittance of about 85\% rendering them as very good candidates for transparent p-type semiconductors. In this work CuxS thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our CuxS thin films, p-type high conductivity with a total visible transmittance of about 50\% have been achieved. (C) 2010 WILEY-VCH Verlag GmbH \&amp; Co. KGaA, Weinheim</p>
},
	issn = {1862-6300},
	doi = {10.1002/pssa.200983731},
	author = {Parreira, P. and Lavareda, G and Valente, J. and Nunes, F. T. and Amaral, A. and Nunes de Carvalho, C}
}
