@conference { ISI:000314688000073,
	title = {Thermal dehydrogenation of amorphous silicon deposited on c-Si: Effect of the substrate temperature during deposition},
	booktitle = {PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11},
	series = {Physica Status Solidi C-Current Topics in Solid State Physics},
	volume = {9},
	number = {10-11},
	year = {2012},
	note = {<p>Symposium A on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III / Spring Meeting of the European-Materials-Reseach-Society (E-MRS), Strasbourg, FRANCE, MAY 14-18, 2012</p>
},
	pages = {2198-2202},
	publisher = {European Mat Res Soc (E-MRS)},
	organization = {European Mat Res Soc (E-MRS)},
	abstract = {<p>Samples of doped and undoped a-Si: H were deposited at temperatures ranging from 100 degrees C to 350 degrees C and then submitted to different dehydrogenation temperatures (from 350 degrees C to 550 degrees C) and times (from 1 h to 4 h). a-Si: H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 degrees C, the thermal activation energy of conductivity and its hydrogen content. Hydrogen content was measured after each thermal treatment. Substrate dopant contamination from phosphorus-doped a-Si thin films was evaluated by SIMS after complete dehydrogenation and a junction depth of 0.1 mu m was obtained. Dehydrogenation results show a strong dependence of the hydrogen content of the as-deposited film on the deposition temperature. Nevertheless, the dehydrogenation temperature seems to determine the final H content in a way almost independent from the initial content in the sample. H richer films dehydrogenate faster than films with lower hydrogen concentration. (C) 2012 WILEY-VCH Verlag GmbH \&amp; Co. KGaA, Weinheim</p>
},
	issn = {1862-6351},
	doi = {10.1002/pssc.201200194},
	author = {de Calheiros Velozo, A. and Lavareda, G and Nunes de Carvalho, C and Amaral, A.},
	editor = {Pizzini, S and Kissinger, G and YamadaKaneta, H and Kang, J}
}
