@article {10308,
	title = {Dopant transfer from poly-si thin films to c-Si: An alternative technique for device processing},
	journal = {Materials Science in Semiconductor Processing},
	volume = {42},
	year = {2016},
	pages = {210-214},
	abstract = {<p>An alternative technique for production of devices which uses both silicon crystalline wafers (p-type) and heavy doped amorphous silicon thin films (n-type) is reported. The amorphous silicon acts as a finite source of dopant and is deposited (at low temperature, 70 {\textdegree}C) by plasma enhanced chemical vapor deposition on silicon wafers. Afterwards, the process of dopant diffusion into the crystalline silicon occurs in a diffusion furnace at 1000 {\textdegree}C for 2 h, to create p{\textendash}n junctions. Using SIMS analyses, a dopant (P) transfer into c-Si of about 30\% is verified and 87\% of the dopant transferred is electrically active. Consequently, n-MOSFET devices are produced using a gate oxide thermally grown at the same diffusion temperature for one hour. The preliminary results of the MOSFET (channel length and width of 0.5 and 5 mm, respectively) show a depletion behavior with a threshold voltage, Vth=-8.2 V and afield-effect mobility, {\textmu}<sub>FE</sub>=187.8 cm<sup>2</sup>/(Vs).</p>
},
	author = {L. Ricardo and Amaral, A. and de Carvalho, C. Nunes and Lavareda, G}
}
