%0 Journal Article %J THIN SOLID FILMS %D 2013 %T p/n junction depth control using amorphous silicon as a low temperature dopant source %A Lavareda, G %A de Calheiros Velozo, A. %A Nunes de Carvalho, C %A Amaral, A. %I Univ Roma Tor Vergata; Im2np; European Off Aerosp Res & Dev; Consiglio Nazl Ric; Queensland Univ Technol, Solar Powered Nano Sensors; FEI; 5Pascal; CNISM; Vacuum Sci; Orsay Phys; Omicron; Ctr Nationale Rech Sci; Consorzio Nazl Interuniversitario Sci Fisic %P 122-124 %R 10.1016/j.tsf.2013.02.043 %V 543 %X

Phosphorus-doped amorphous silicon thin films, deposited at low temperatures by Plasma Enhanced Chemical Vapour Deposition were used as a dopant source on p-type c-Si substrates. A careful step of dehydrogenation was done in order to maintain the a-Si thin-film integrity. Subsequently, a fine-controlled drive-in of dopant, from the amorphous layer to the crystalline wafer was done, to form the p/n junction, using different time periods and temperatures. Dopant profiling in c-Si wafers as well as dopant concentration in a-Si: H films prior to diffusion, both measured by Secondary Ion Mass Spectrometry, are presented. Junction depths obtained are in the range of 98 nm to 2.4 mu m and surface concentrations are in the range of 1.1 x 10(21) to 4.3 x 10(20) at/cm(3). A dual diffusion mechanism explains the ``kink-and-tail{''} shape found for dopant profile. (C) 2013 Elsevier B.V. All rights reserved.

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4th International Conference on Nanostructures Self-Assembly (NANOSEA), ITALY, JUN 25-29, 2012

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