@article {6430,
	title = {Thermal dehydrogenation of amorphous silicon: A time-evolution study},
	journal = {THIN SOLID FILMS},
	volume = {543},
	year = {2013},
	note = {<p>4th International Conference on Nanostructures Self-Assembly (NANOSEA), ITALY, JUN 25-29, 2012</p>
},
	month = {SEP 30},
	pages = {48-50},
	publisher = {Univ Roma Tor Vergata; Im2np; European Off Aerosp Res \& Dev; Consiglio Nazl Ric; Queensland Univ Technol, Solar Powered Nano Sensors; FEI; 5Pascal; CNISM; Vacuum Sci; Orsay Phys; Omicron; Ctr Nationale Rech Sci; Consorzio Nazl Interuniversitario Sci Fisic},
	abstract = {<p>A model is proposed to describe the decrease of H content in hydrogenated amorphous silicon (a-Si: H), during annealing at a fixed temperature. H content has been measured in several a-Si: H samples ( grown by plasma enhanced chemical vapor deposition) after being submitted to different annealing times at 400 degrees C. Obtained data has been fitted to the proposed model and initial diffusion coefficients of 3.2 x 10(-14) cm(2)/s for intrinsic films and 4.2 x 10(-14) cm(2)/s for n-type films were obtained. Reversely, H content evolution can be predicted during a thermal treatment if diffusion coefficients are previously known. (C) 2013 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2013.03.035},
	author = {de Calheiros Velozo, A. and Lavareda, G and Nunes de Carvalho, C and Amaral, A.}
}
