@article {6429,
	title = {p/n junction depth control using amorphous silicon as a low temperature dopant source},
	journal = {THIN SOLID FILMS},
	volume = {543},
	year = {2013},
	note = {<p>4th International Conference on Nanostructures Self-Assembly (NANOSEA), ITALY, JUN 25-29, 2012</p>
},
	month = {SEP 30},
	pages = {122-124},
	publisher = {Univ Roma Tor Vergata; Im2np; European Off Aerosp Res \& Dev; Consiglio Nazl Ric; Queensland Univ Technol, Solar Powered Nano Sensors; FEI; 5Pascal; CNISM; Vacuum Sci; Orsay Phys; Omicron; Ctr Nationale Rech Sci; Consorzio Nazl Interuniversitario Sci Fisic},
	abstract = {<p>Phosphorus-doped amorphous silicon thin films, deposited at low temperatures by Plasma Enhanced Chemical Vapour Deposition were used as a dopant source on p-type c-Si substrates. A careful step of dehydrogenation was done in order to maintain the a-Si thin-film integrity. Subsequently, a fine-controlled drive-in of dopant, from the amorphous layer to the crystalline wafer was done, to form the p/n junction, using different time periods and temperatures. Dopant profiling in c-Si wafers as well as dopant concentration in a-Si: H films prior to diffusion, both measured by Secondary Ion Mass Spectrometry, are presented. Junction depths obtained are in the range of 98 nm to 2.4 mu m and surface concentrations are in the range of 1.1 x 10(21) to 4.3 x 10(20) at/cm(3). A dual diffusion mechanism explains the {\textquoteleft}{\textquoteleft}kink-and-tail{{\textquoteright}{\textquoteright}} shape found for dopant profile. (C) 2013 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2013.02.043},
	author = {Lavareda, G and de Calheiros Velozo, A. and Nunes de Carvalho, C and Amaral, A.}
}
