@article {6426,
	title = {InOx thin films deposited by plasma assisted evaporation: Application in light shutters},
	journal = {VACUUM},
	volume = {107},
	year = {2014},
	note = {<p>n/a</p>
},
	month = {SEP},
	pages = {116-119},
	abstract = {<p>{An integration of undoped InOx and commercial ITO thin films into laboratory assembled light shutter devices is made. Accordingly, undoped transparent conductive InOx thin films, about 100 nm thick, are deposited by radiofrequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium teardrops with no intentional heating of the glass substrates. The process of deposition occurs at very low deposition rates (0.1-0.3 nm/s) to establish an optimized reaction between the oxygen plasma and the metal vapor. These films show the following main characteristics: transparency of 87\% (wavelength</p>
},
	doi = {10.1016/j.vacuum.2014.04.011},
	author = {Merino, E. G. and Lavareda, G and Brogueira, P. and Amaral, A. and Nunes de Carvalho, C and Almeida, PL}
}
