<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Barquinha, Pedro</style></author><author><style face="normal" font="default" size="100%">Pereira, Sonia</style></author><author><style face="normal" font="default" size="100%">Pereira, Luis</style></author><author><style face="normal" font="default" size="100%">Wojcik, Pawel</style></author><author><style face="normal" font="default" size="100%">Grey, Paul</style></author><author><style face="normal" font="default" size="100%">Martins, Rodrigo</style></author><author><style face="normal" font="default" size="100%">Fortunato, Elvira</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Flexible and Transparent WO3 Transistor with Electrical and Optical Modulation</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Electronic Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000357655700008</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">1</style></volume><isbn><style face="normal" font="default" size="100%">2199-160X</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">n/a</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:000357655700008</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;Times Cited: 1&lt;/p&gt;
</style></notes><custom7><style face="normal" font="default" size="100%">1500030</style></custom7></record><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Lajn, Alexander</style></author><author><style face="normal" font="default" size="100%">von Wenckstern, Holger</style></author><author><style face="normal" font="default" size="100%">Grundmann, Marius</style></author><author><style face="normal" font="default" size="100%">Wagner, Gerald</style></author><author><style face="normal" font="default" size="100%">Barquinha, Pedro</style></author><author><style face="normal" font="default" size="100%">Fortunato, Elvira</style></author><author><style face="normal" font="default" size="100%">Martins, Rodrigo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Applied Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2013</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Jan 28</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000314724500129</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">4</style></number><volume><style face="normal" font="default" size="100%">113</style></volume><isbn><style face="normal" font="default" size="100%">0021-8979</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">n/a</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:000314724500129</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;Times Cited: 8&lt;/p&gt;
</style></notes><custom7><style face="normal" font="default" size="100%">044511</style></custom7></record><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Lorenz, M.</style></author><author><style face="normal" font="default" size="100%">Lajn, A.</style></author><author><style face="normal" font="default" size="100%">Frenzel, H.</style></author><author><style face="normal" font="default" size="100%">Wenckstern, H. V.</style></author><author><style face="normal" font="default" size="100%">Grundmann, M.</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Dec 13</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000285481000086</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">24</style></number><volume><style face="normal" font="default" size="100%">97</style></volume><isbn><style face="normal" font="default" size="100%">0003-6951</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">n/a</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:000285481000086</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;Times Cited: 16&lt;/p&gt;
</style></notes><custom7><style face="normal" font="default" size="100%">243506</style></custom7></record><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wang, Jinzhong</style></author><author><style face="normal" font="default" size="100%">Elamurugu, Elangovan</style></author><author><style face="normal" font="default" size="100%">Sallet, Vincent</style></author><author><style face="normal" font="default" size="100%">Jomard, Francois</style></author><author><style face="normal" font="default" size="100%">Lusson, Alain</style></author><author><style face="normal" font="default" size="100%">Ana M. Botelho do Rego</style></author><author><style face="normal" font="default" size="100%">Barquinha, Pedro</style></author><author><style face="normal" font="default" size="100%">Goncalves, Goncalo</style></author><author><style face="normal" font="default" size="100%">Martins, Rodrigo</style></author><author><style face="normal" font="default" size="100%">Fortunato, Elvira</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Surface Science</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Sep 15</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000258998700011</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">22</style></number><volume><style face="normal" font="default" size="100%">254</style></volume><pages><style face="normal" font="default" size="100%">7178-7182</style></pages><isbn><style face="normal" font="default" size="100%">0169-4332</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">n/a</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:000258998700011</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;Times Cited: 16&lt;/p&gt;
</style></notes></record><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.</style></author><author><style face="normal" font="default" size="100%">Pimentel, A.</style></author><author><style face="normal" font="default" size="100%">Goncalves, A.</style></author><author><style face="normal" font="default" size="100%">Pereira, L.</style></author><author><style face="normal" font="default" size="100%">Marques, A.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Morais, J</style></author><author><style face="normal" font="default" size="100%">D. Kumar</style></author><author><style face="normal" font="default" size="100%">Houssa, M.</style></author><author><style face="normal" font="default" size="100%">Singh, R. K.</style></author><author><style face="normal" font="default" size="100%">Landheer, D.</style></author><author><style face="normal" font="default" size="100%">Ramesh, R.</style></author><author><style face="normal" font="default" size="100%">Wallace, R. M.</style></author><author><style face="normal" font="default" size="100%">Guha, S.</style></author><author><style face="normal" font="default" size="100%">Koinuma, H.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Next generation of thin film transistors based on zinc oxide</style></title><secondary-title><style face="normal" font="default" size="100%">Integration of Advanced Micro-and Nanoelectronic Devices-Critical Issues and Solutions</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">Materials Research Society Symposium Proceedings</style></tertiary-title></titles><dates><year><style  face="normal" font="default" size="100%">2004</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000224411400051</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">811</style></volume><pages><style face="normal" font="default" size="100%">347-352</style></pages><isbn><style face="normal" font="default" size="100%">0272-91721-55899-761-X</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">n/a</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:000224411400051</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;Times Cited: 0Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring MeetingApr 13-16, 2004San Francisco, CAMat Res Soc&lt;/p&gt;
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