@article {Oliveira2016430, title = {A path to renewable Mg reduction from MgO by a continuous-wave Cr:Nd:YAG ceramic solar laser}, journal = {Solar Energy Materials and Solar Cells}, volume = {155}, year = {2016}, note = {

cited By 0

}, pages = {430-435}, abstract = {

The first successful ablation of magnesium oxide through a home-made continuous-wave Cr:Nd:YAG ceramic solar laser is reported. A stationary heliostat-parabolic mirror solar energy collection and concentration system was used. A stable continuous-wave laser output power of 19.2 W was attained with laser beam brightness figure of merit 7.6 times higher than that of the previous scheme, enabling therefore the direct ablation of pure magnesium by our solar-pumped laser with only 1.6 m2 effective collection area. This could be an important step towards renewable magnesium production, offering multiple advantages, such as reducing agent avoidance, in relation to that of the previous Fresnel lens Cr:Nd:YAG continuous-wave solar laser system. {\textcopyright} 2016 Elsevier B.V.

}, doi = {10.1016/j.solmat.2016.06.046}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978107440\&partnerID=40\&md5=ddcf3b028515208d878b25cc495f0b62}, author = {Oliveira, M.a , Liang, D.a , Almeida, J.a , Vistas, C.R.a , Gon{\c c}alves, F.a , Martins, R.b} } @article {O{\textquoteright}Brien20111174, title = {The effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method}, journal = {Thin Solid Films}, volume = {520}, number = {4}, year = {2011}, note = {

cited By 3

}, pages = {1174-1177}, abstract = {

The influence of doping on the morphology, physical and electrical properties of zinc oxide produced by the sol-gel method was examined. Undoped zinc oxide was observed to form relatively porous films. Addition of an Al dopant influenced the sheet resistance, but did not result in a change in morphology, examined by atomic force microscopy when compared to undoped films. In the case of electrical measurements, undoped ZnO films were extremely resistive. A minimum dopant concentration of 2 at.\%. Al was required to produce materials which were more conductive, as observed by sheet resistance measurements, which were shown to vary with annealing temperature. The versatile nature of sol-gel processing was demonstrated by selective ink-jet deposition of sol-gel droplets which were annealed to form oxide materials. {\textcopyright} 2011 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2011.04.210}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-82755189604\&partnerID=40\&md5=6a5dfa132b336c13620678f6dffaf663}, author = {O{\textquoteright}Brien, S.a , {\c C}opuroglu, M.a , Tassie, P.b , Nolan, M.G.a , Hamilton, J.A.a , Povey, I.a , Pereira, L.c , Martins, R.c , Fortun} } @article {Olziersky2011512, title = {Role of Ga 2O 3-In 2O 3-ZnO channel composition on the electrical performance of thin-film transistors}, journal = {Materials Chemistry and Physics}, volume = {131}, number = {1-2}, year = {2011}, note = {

cited By 31

}, pages = {512-518}, abstract = {

In this work we present a study aiming to determine the role of Ga2O3-In2O3-ZnO (GIZO) channel layer composition on the electrical performance and stability exhibited by thin-film transistors (TFTs). The GIZO films were obtained by magnetron sputtering using ceramic targets of different compositions (Ga:In:Zn = 2:2:1, 2:2:2, 2:4:1 and 2:4:2 at.). Structural analysis corroborates the fully amorphous character of the GIZO deposited layers. For the target compositional range used we observe a Zn deficiency on the produced films, which affects the In/Ga atomic concentration ratios. Resistivity and mobility are found to show a general trend against the measured In/Ga ratio that reveals the role played by In and Ga cations on the transport mechanisms. Targets with increased In concentrations (2:4:1 and 2:4:2) allow to obtain the best TFT performances with field effect mobilities reaching values of 53.0 and 51.7cm2 V-1 s-1, respectively. In addition, the In-richer GIZO compositions result in considerably more stable TFTs, especially under positive gate bias stress conditions. Finally, it is verified that by using a target with a slightly lower In atomic composition (2:4:2 in comparison to 2:4:1), good stability and mobility can be achieved with potentially lower material costs.{\textcopyright} 2011 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.matchemphys.2011.10.013}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860761855\&partnerID=40\&md5=396450f340d19a8f0b0df4c37031411f}, author = {Olziersky, A.a , Barquinha, P.b , Vil{\`a}, A.a , Magana, C.a , Fortunato, E.b , Morante, J.R.a c , Martins, R.b} } @article {Olziersky2010, title = {Insight on the SU-8 resist as passivation layer for transparent Ga 2 O3 - In2 O3-ZnO thin-film transistors}, journal = {Journal of Applied Physics}, volume = {108}, number = {6}, year = {2010}, note = {

cited By 32

}, abstract = {

{A nonvacuum and low temperature process for passivating transparent metal oxides based thin-film transistors is presented. This process uses the epoxy-based SU-8 resist which prevents device degradation against environmental conditions, vacuum or sputtering surface damage. The incorporation of SU-8 as a passivation layer is based on the ability of this polymer to provide features with high mechanical and chemical stability. With this approach, lithography is performed to pattern the resist over the active area of the device in order to form the passivation layer. The resulting transistors demonstrate very good electrical characteristics, such as μFE =61 cm2 /V s

}, doi = {10.1063/1.3477192}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957740514\&partnerID=40\&md5=c035abb8be52b3a1285c1065b6c55e3c}, author = {Olziersky, A.a , Barquinha, P.b , Vil̀, A.a , Pereira, L.b , Gonalves, G.b , Fortunato, E.b , Martins, R.b , Morante, J.R.a c} } @article {O{\textquoteright}Brien20104515, title = {Zinc oxide thin films: Characterization and potential applications}, journal = {Thin Solid Films}, volume = {518}, number = {16}, year = {2010}, note = {

cited By 37

}, pages = {4515-4519}, abstract = {

Zinc oxide (ZnO) has attracted recent interest for a range of applications, including use as a transparent conductive oxide (TCO) and in gas sensor devices. This paper compares ZnO films grown using two methods designed for the production of thin films, namely sol-gel and aerosol assisted chemical vapour deposition (AACVD) for potential use in sensor and TCO applications. Materials produced by the sol-gel route were observed to be amorphous when annealed at 350 {\textdegree}C, but were crystalline when annealed at higher temperatures and had a relatively open grain structure when compared to the AACVD films. Electrical characterization showed that materials were highly resistive, but that their properties varied considerably when the measurements were performed in vacuum or in air. This behaviour was rapidly reversible and reproducible for room temperature measurement. In contrast materials grown by aerosol-assisted CVD were non-porous, polycrystalline and conductive. Measured electrical properties did not vary with changing measurement atmosphere. These differences are discussed in terms of the structural characterisation of the films and some comments are made regarding the suitability of both approaches for the growth of ZnO thin film sensor materials. {\textcopyright} 2009 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2009.12.020}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955643143\&partnerID=40\&md5=8421fa714fc3e7a4b5934e61854f8593}, author = {O{\textquoteright}Brien, S.a , Nolan, M.G.a , {\c C}opuroglu, M.a , Hamilton, J.A.a , Povey, I.a , Pereira, L.b , Martins, R.b , Fortunato, E.b , Pem} }