@article {Elamurugu2012, title = {The electronic transport mechanism in indium molybdenum oxide thin films RF sputtered at room temperature}, journal = {EPL}, volume = {97}, number = {3}, year = {2012}, note = {

cited By 2

}, abstract = {

Indium molybdenum oxide (IMO) thin films were radio-frequency (RF) sputtered at room temperature (RT) and studied as a function of base pressure (BP). The crystallinity of the films is decreased with the increase in BP. A maximum mobility (μ) of 49.6 cm 2 V -1 s -1 was obtained from the IMO films deposited at RT without any post-annealing treatment. The electronic behaviour of the deposited films was investigated by temperature-dependent (100-550 K) Hall measurements. Study on the scattering mechanisms based on the experimental data and theoretical models show that the ionized scattering centres are dominating. The films possess wide work function (4.91 eV) and high transmittance (\> 70\%) over visible and near infrared (NIR) range. The obtained results, especially the high work function and NIR transmittance, are very promising particularly in applications such as optical detectors and solar cells. Copyright {\textcopyright} EPLA, 2012.

}, doi = {10.1209/0295-5075/97/36002}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84857067788\&partnerID=40\&md5=1fedea4fee510e8936e09a074ba81654}, author = {Elamurugu, E.a , Shanmugam, P.a , Gon{\c c}alves, G.a , Franco, N.b , Alves, E.b , Martins, R.a , Fortunato, E.a} } @article {Elangovan20111391, title = {Thin-film transistors based on indium molybdenum oxide semiconductor layers sputtered at room temperature}, journal = {IEEE Electron Device Letters}, volume = {32}, number = {10}, year = {2011}, note = {

cited By 6

}, pages = {1391-1393}, abstract = {

Thin-film transistors (TFTs) were fabricated using a 20-nm-thick indium molybdenum oxide (IMO) semiconductor layer at room temperature. The grazing incidence X-ray diffraction patterns confirmed that the deposited films are amorphous. The average transmittance (400-2500 nm) and the optical band gap are \~{}88\% and 3.95 eV, respectively. The TFTs fabricated on glass substrates showed a saturation mobility of 4.0 cm2/Vc s with an I ON/IOFF ratio of 2 {\texttimes} 103 and a threshold voltage of-1.1 V, which are encouraging preliminary results in order to develop IMO as high-performance semiconductor layer. {\textcopyright} 2011 IEEE.

}, doi = {10.1109/LED.2011.2162310}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-80053567839\&partnerID=40\&md5=757a63fef4d59d482f249522a6fddbca}, author = {Elangovan, E., Saji, K.J., Parthiban, S., Goncalves, G., Barquinha, P., Martins, R., Fortunato, E.} } @article {Elangovan20092123, title = {Indium molybdenum oxide thin films: A comparative study by two different RF sputtering systems}, journal = {Physica Status Solidi (A) Applications and Materials Science}, volume = {206}, number = {9}, year = {2009}, note = {

cited By 3

}, pages = {2123-2127}, abstract = {

Indium molybdenum oxide thin films were deposited using different radio-frequency sputtering units on glass substrates at room temperature from an In 2O 3 (95 wt.\%): Mo (5 wt.\%) target. The film thickness ranges between 160 and 275 nm. The chamber volume of Unit-1 was ̃2.4 times larger than that of Unit-2. Apart from the chamber volume, a significant difference between the two units was the sputtering pressure. The films were characterized by their structural, morphological, optical, and electrical properties. A strong reflection from (222) plane was obtained for the ̃275 nm thick films deposited in Unit-1. The films deposited with \<275 nm thickness and those deposited in Unit-2 are close to amorphous with a small crystalline fraction. The surface of the films deposited in Unit-1 is comprised of randomly arranged crystallites, which is restructured with the increasing film thickness to become a well defined "rice field" like structure (275 nm thick). The films deposited in Unit-2 are comprised of many holes on the surface that is presumably due to back sputtering. The average visible transmittance calculated in the wavelength between 400 and 800 nm ranges from 70 to 82\%. The optical band gap is found to vary between 3.80 and 3.86 eV. The lowest bulk resistivity of the films deposited in Unit-1 was increased from ̃4.06{\texttimes}10 -3 to 4.07{\texttimes}10 -1ωcm when deposited in Unit-2. The carrier concentration was decreased from 1.31{\texttimes}10 20 to 1.03{\texttimes}10 18 cm -3 but the Hall mobility increased from 11.7 to 15.0 cm2 V -1 s -1. {\textcopyright} 2009 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.

}, doi = {10.1002/pssa.200881796}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-70349136686\&partnerID=40\&md5=e4e298151cf9ed7abe77db17739dd05d}, author = {Elangovan, E., Martins, R., Fortunato, E.} } @article {Elangovan2009726, title = {RF sputtered wide work function indium molybdenum oxide thin films for solar cell applications}, journal = {Solar Energy}, volume = {83}, number = {5}, year = {2009}, note = {

cited By 20

}, pages = {726-731}, abstract = {

Indium molybdenum oxide (IMO) thin films were deposited by RF magnetron sputtering on glass substrates at room temperature. The deposition and argon partial pressures were maintained at 6.0 {\texttimes} 10-1 Pa and 3.0 {\texttimes} 10-1 Pa, respectively. The oxygen partial pressure (OPP) was varied in the range 1.0-6.0 {\texttimes} 10-3 Pa. The films were sputtered at 40 W for 30 min using the target consisted In2O3 (98 wt\%): Mo (2 wt\%). The films are polycrystalline with a slight preferential orientation along (2 2 2) plane. The crystallinity is increased with the increasing OPP. The negative sign of Hall coefficient confirmed the n-type conductivity. A maximum mobility \~{}19 cm2 V-1 s-1 is obtained for the films deposited with OPP of 3.6 {\texttimes} 10-3 Pa. The average visible transmittance calculated in the wavelength ranging 500-800 nm is ranging between 2\% and 77\%. The optical band gap calculated from the absorption data is varied between 3.69 and 3.91 eV. A striking feature is that the work function of the films is wide ranging 4.61-4.93 eV. A possibility of using the produced IMO films as transparent conducting oxide in photovoltaic applications such as organic solar cells is discussed in this article. {\textcopyright} 2008 Elsevier Ltd. All rights reserved.

}, doi = {10.1016/j.solener.2008.11.001}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-63449083309\&partnerID=40\&md5=bf7aba3387a28871b78635b2446de350}, author = {Elangovan, E., Gon{\c c}alves, G., Martins, R., Fortunato, E.} } @article {Elangovan20081489, title = {Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature}, journal = {Vacuum}, volume = {82}, number = {12}, year = {2008}, note = {

cited By 7

}, pages = {1489-1494}, abstract = {

Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O2 vol. \%; ranging from 0.0 to 17.5\%) in the sputtering chamber. The as-deposited amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96\% at 600 nm) observed from the films deposited without oxygen increased to a maximum of 88.01\% (3.5 O2 vol. \%); whereas this transmittance was decreased with the increasing O2 vol. \% to as low as 81.04\% (15.6 O2 vol. \%); a maximum of 89.80\% was obtained from the films annealed at 500 {\textdegree}C in open air (3.5 O2 vol. \%). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O2 vol. \% to as high as 3.91 eV (17.5 O2 vol. \%). A maximum of 3.92 eV was obtained from the films annealed at 300 {\textdegree}C in N2:H2 gas atmosphere (17.5 O2 vol. \%). {\textcopyright} 2008 Elsevier Ltd. All rights reserved.

}, doi = {10.1016/j.vacuum.2008.03.005}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-49349088879\&partnerID=40\&md5=8cd666bae43b4f2d68f027457b7b5aed}, author = {Elangovan, E., Marques, A., Pimentel, A., Martins, R., Fortunato, E.} } @article {Elangovan20082831, title = {Effect of annealing on the properties of RF sputtered indium molybdenum oxide thin films}, journal = {Journal of Non-Crystalline Solids}, volume = {354}, number = {19-25}, year = {2008}, note = {

cited By 1

}, pages = {2831-2838}, abstract = {

Indium molybdenum oxide thin films radio-frequency sputtered at room temperature on glass were studied as a function of oxygen volume percentage. The as-deposited films were post-annealed in the temperature range of 300-500 {\textdegree}C in oxidizing (open air) and reducing (N2:H2 gas) atmospheres for 1 h. The as-deposited amorphous films become crystalline on post-annealing irrespective of the annealing conditions. In most cases, the (2 2 2) diffraction line is emerged as the high intensive peak. The films annealed at >=400 {\textdegree}C in N2:H2 show a carrier concentration \>1020 cm-3. The better electrical properties are obtained for the films post-annealed at 300 {\textdegree}C. The optical transmittance of the as-deposited films varies between 10\% and 85\% depending on the deposition and annealing conditions. Atomic force microscope analysis reveal that the films annealed at 300 {\textdegree}C are composed of closely packed crystallites (size of which varies between 5 nm and 150 nm) whose size varies noticeably when the annealing temperature is raised to 400 {\textdegree}C. On the other hand, the surface of the films annealed at 500 {\textdegree}C becomes rougher, with the RMS roughness varying between 2.00 nm and 16.97 nm. The surface of the films deposited in the presence of oxygen shows metal like features when annealed at >=400 {\textdegree}C in N2:H2 that is attributed to the segregation of indium. Further, the segregation of In is substantiated from the scanning electron microscope analysis of these samples. {\textcopyright} 2008 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.jnoncrysol.2007.12.015}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-43049146502\&partnerID=40\&md5=010b36ba85966b0b81f6e6a524439994}, author = {Elangovan, E., Martins, R., Fortunato, E.} } @article {Elangovan20081359, title = {Some studies on highly transparent wide band gap indium molybdenum oxide thin films rf sputtered at room temperature}, journal = {Thin Solid Films}, volume = {516}, number = {7}, year = {2008}, note = {

cited By 14

}, pages = {1359-1364}, abstract = {

Transparent wide band gap indium molybdenum oxide (IMO) thin films were rf sputtered on glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40-180~W) and sputtering time (ranging 2.5-20~min). The film thickness was varied in the range 50-400~nm. The as-deposited films were characterized by their structural (XRD), morphological (AFM), electrical (Hall Effect measurements) and optical (visible-NIR spectroscopy) properties. XRD studies revealed that the films are amorphous for the sputtering power <= 100~W and the deposition time <= 5~min, and the rest are polycrystalline with a strong reflection from (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 {\texttimes} 10- 3~Ω cm and a maximum carrier concentration of 4.16 {\texttimes} 1020~cm- 3 are obtained for the crystalline films sputtered at 180~W (10~min). Whereas a maximum mobility (19.5 ~cm2 V- 1 s- 1) and average visible transmittance (\~{} 85\%) are obtained for the amorphous films sputtered at 80~W and 100~W respectively for 10~min. A minimum transmittance (\~{} 18\%) was obtained for the crystalline films sputtered at 180~W (\~{} 305~nm thick). The optical band gap was found varying between 3.75 and 3.90~eV for various sputtering parameters. The obtained results are analyzed and corroborated with the structure of the films. {\textcopyright} 2007 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2007.03.155}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-38649096325\&partnerID=40\&md5=08725280ed2e7fb8948e68116b9f80af}, author = {Elangovan, E.a , Marques, A.a , Viana, A.S.b , Martins, R.a , Fortunato, E.a} } @article {Elangovan20078549, title = {Effect of base and oxygen partial pressures on the electrical and optical properties of indium molybdenum oxide thin films}, journal = {Thin Solid Films}, volume = {515}, number = {24 SPEC. ISS.}, year = {2007}, note = {

cited By 7

}, pages = {8549-8552}, abstract = {

Indium molybdenum oxide thin films were RF sputtered at room temperature on glass substrates with a reference base pressure of 7.5 {\texttimes} 10- 4~Pa. The electrical and optical properties of the films were studied as a function of oxygen partial pressures (OPP) ranging from 1.5 {\texttimes} 10- 3~Pa to 3.5 {\texttimes} 10- 3~Pa. The obtained data show that the bulk resistivity of the films increased by about 4 orders of magnitude (from 7.9 {\texttimes} 10- 3 to 7.6 {\texttimes} 101~Ω-cm) when the OPP increased from 1.5 {\texttimes} 10-3 to 3.5 {\texttimes} 10- 3~Pa, and the carrier concentration decreased by about 4 orders (from 1.77 {\texttimes} 1020 to 2.31 {\texttimes} 1016~cm- 3). On the other hand, the average visible transmittance of 30.54\% of the films (brown colour; OPP = 1.5 {\texttimes} 10- 3~Pa) was increased with increasing OPP to a maximum of 80.47\% (OPP = 3.5 {\texttimes} 10- 3~Pa). The optical band gap calculated from the absorption edge of the transmittance spectra ranges from 3.77 to 3.88~eV. Further, the optical and electrical properties of the films differ from those deposited at similar conditions but with a base pressure lower than 7.5 {\texttimes} 10- 4~Pa. {\textcopyright} 2007 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2007.03.127}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548859521\&partnerID=40\&md5=ae76f8075ab8c9b24ddcf7813daaecdf}, author = {Elangovan, E., Martins, R., Fortunato, E.} } @article {Elangovan20075512, title = {Preliminary studies on molybdenum-doped indium oxide thin films deposited by radio-frequency magnetron sputtering at room temperature}, journal = {Thin Solid Films}, volume = {515}, number = {13}, year = {2007}, note = {

cited By 10

}, pages = {5512-5518}, abstract = {

Thin films of molybdenum-doped indium oxide (IMO) were prepared by a 3-source, cylindrical radio-frequency magnetron sputtering at room temperature. The films were post-annealed and were characterized by their structural (X-ray diffraction) and optical (UV-VIS-NIR spectrophotometer) properties. The films were studied as a function of oxygen volume percentage (O2 vol.\%) ranging from 3.5 to 17.5. The structural studies revealed that the as-deposited amorphous films become crystalline on annealing. In most cases, the (222) reflection emerged as high intensive peak. The poor visible transmittance of the films as-deposited without oxygen was increased from \~{} 12\% to over 80\% on introducing oxygen (3.5 O2 vol.\%). For the films annealed in open air, the average visible transmittance in the wavelength ranging 400-800~nm was varied between 77 and 84\%. The films annealed at high temperatures (\> 300~{\textdegree}C) decreased the transmittance to as low as \< 1\%. The optical band gap of the as-deposited films increased from the range 3.83-3.90 to 3.85-3.98~eV on annealing at different conditions. {\textcopyright} 2007 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.tsf.2007.01.022}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-34047112710\&partnerID=40\&md5=1d7e1f91af44a815558192d307bc8dda}, author = {Elangovan, E., Marques, A., Fernandes, F.M.B., Martins, R., Fortunato, E.} } @conference {Elangovan20061, title = {A next generation TCO material for display systems: Molybdenum doped indium oxide thin films}, booktitle = {Materials Research Society Symposium Proceedings}, volume = {936}, year = {2006}, note = {

cited By 0

}, pages = {1-6}, abstract = {

Thin films of indium molybdenum oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40-180 W) and sputtering time (ranging 2.5-20 min). Thickness of the films found varied between 50-400 nm. The films were characterized for their structural (XRD), electrical (Hall measurements) and optical (Transmittance spectra) properties. XRD studies revealed that the films are amorphous for the sputtering power <= 100 W and deposition time <= 5 min. All the other films are polycrystalline and the strongest refection along (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 {\texttimes} 10-3 Ω-cm and a maximum carrier concentration of 4.16 {\texttimes} 1020 cm-3 have been obtained for the films sputtered at 180 W (10 min). Whereas maximum mobility (19.5 cm2 V-1 s-1) has been obtained for the films sputtered at 80 W (10 min). A maximum visible transmittance of 90\% (500 nm) has been obtained for the films sputtered at 80 W (10 min) with a minimum of 27\% for those sputtered at 180 W. The optical band gap of the films found varying between 3.75 and 3.90 eV for various sputtering parameters. {\textcopyright} 2006 Materials Research Society.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33947643780\&partnerID=40\&md5=830becec51dfad38c219a4164fb7b1b6}, author = {Elangovan, E., Marques, A., Martins, R., Fortunato, E.} } @conference {Elangovan200692, title = {Some studies on molybdenum doped indium oxide thin films rf sputtered at room temperature}, booktitle = {Materials Research Society Symposium Proceedings}, volume = {928}, year = {2006}, note = {

cited By 1

}, pages = {92-97}, abstract = {

Thin films of molybdenum doped indium oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of oxygen volume percentage (OVP) ranging 1.4 - 10.0\% in the sputtering chamber. The thickness of the films found varying between 180 and 260 nm. The X-ray diffraction pattern showed the films are polycrystalline with the peaks corresponding to (222) and (400) planes and one among them showing as a preferential orientation. It is observed that the preferred orientation changes from (222) plane to (400) as the OVP increases from 1.4 to 10.0\%. The transmittance spectra were found to be in the range of 77 to 89\%. The optical band gap calculated from the absorption coefficient of transmittance spectra was around 3.9 eV. The negative sign of Hall coefficient confirmed the films were n-type conducting. The bulk resistivity increased from 2.26{\texttimes}10 -3 to 4.08{\texttimes}-1 Ωcm for the increase in OVP from 1.4 to 4.1\%, and thereafter increased dramatically so as the Hall coefficients were not detectable. From the AFM morphologies it is evaluated that the RMS roughness of the films ranges from 0.9 to 3.2 nm. {\textcopyright} 2006 Materials Research Society.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33947670593\&partnerID=40\&md5=ca2fb785118b2df1a1ee5e0fcf85e0a7}, author = {Elangovan, E.a , Barquinha, P.a , Pimental, A.a , Viana, A.S.b , Martins, R.a , Fortunato, E.a} } @conference {Elangovan200535, title = {Molybdenum doped indium oxide thin films prepared by rf sputtering}, booktitle = {Materials Research Society Symposium Proceedings}, volume = {905}, year = {2005}, note = {

cited By 1

}, pages = {35-40}, abstract = {

Molybdenum doped indium oxide (IMO) thin films rf sputtered at room temperature were studied as a function of oxygen volume percentage (O 2 vol. \%) varied between 0 and 17.5. The as-deposited films were amorphous irrespective of O2 vol. \%. The minimum transmittance (\<10 \%) of the films deposited without oxygen has been increased on introducing oxygen (3.5 O2 vol. \%) to a maximum of 90 \%. The optical band gap has been increased from 3.80 eV (without oxygen) to 3.92 eV (3.5 O 2 vol. \%). The films were highly resistive and the hall coefficients were detectable only for the films deposited without oxygen. In order to increase the electrical conductivity, the films were annealed in the range 100-500{\textdegree} C in open-air and N2/H: gas for 1 hour. The annealed films become polycrystalline with enhanced electrical and optical properties. The effect of annealing conditions on these films will be presented and discussed in detail. {\textcopyright} 2006 Materials Research Society.

}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-34249935187\&partnerID=40\&md5=940670d87a3300677ecd39e17e874e42}, author = {Elangovan, E., Marques, A., Pimentel, A., Martins, R., Fortunato, E.} }