Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrO<inf>x</inf> dielectric

Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrO<inf>x</inf> dielectric

Citation:: c c Shan, F.a, Liu Liu Meng Fortunato Martins A. a G. a. "Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrOx dielectric." IEEE/OSA Journal of Display Technology. 11 (2015): 541-546.

Abstract:

This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrOx layer. The ZrOx thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm2 at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm2 at 50 Hz. The InZnO TFT incorporating the UV-treated ZrOx dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of 10

Notes:

cited By 2

Rodrigo Martins

Professor @ Materials Science Department