Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric

Citation:
Nayak, Pradipta K., Tito Busani, Elangovan Elamurugu, Pedro Barquinha, Rodrigo Martins, Yongtaek Hong, and Elvira Fortunato. "Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric." Applied Physics Letters. 97 (2010).

Abstract:

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Notes:

Times Cited: 29

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