Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization

Citation:
Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization." Advanced Materials Forum Iii, Pts 1 and 2. Ed. P. M. Vilarinho. Vol. 514-516. Materials Science Forum, 514-516. 2006. 28-32.

Abstract:

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Notes:

Times Cited: 03rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM)Mar 20-23, 2005Univ Aveiro, Aveiro, PORTUGALPortuguese Mat Soc; Mat Network Atlantic Arc; CiCECO; BPI; Bayer Mat Sci; DURIT; IZASA; GIC; Novagres; Rauschert; CRIOLAB CRYOGENICS Vacuum Syst Vacuum Chambers; FCT; NTI EUROPE; Fdn Calouste Gulbenkian; ScienTec; ThermoLab; Papelave; cienciapt net; Air Liquide

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