Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
- Citation:
- Kiazadeh, Asal, Daniela Salgueiro, Rita Branquinho, Joana Pinto, Henrique L. Gomes, Pedro Barquinha, Rodrigo Martins, and Elvira Fortunato. "Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress." Apl Materials. 3 (2015).
Abstract:
n/a
Notes:
Times Cited: 1
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