Pedro Barquinha
Materials Science Department, I3N|CENIMAT
pmcb@fct.unl.pt
(email)
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Kiazadeh, Asal, Daniela Salgueiro, Rita Branquinho, Joana Pinto, Henrique L. Gomes, Pedro Barquinha, Rodrigo Martins, and Elvira Fortunato.
"
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
."
Apl Materials
. 3 (2015).
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Recent Publications
Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate
Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Next generation of thin film transistors based on zinc oxide
Zinc oxide thin-film transistors
Recent advances in ZnO transparent thin film transistors
more