%0 Journal Article %J Physical Review A %D 2016 %T Ground-state Landé <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML"><mi>g</mi></math></span> factors for selected ions along the boron isoelectronic sequence %A J. P. Marques %A P. Indelicato %A F. Parente %A Sampaio, J M %A J P Santos %I American Physical Society %M 19B5DED7-4CD3-49DA-8C6D-3FDC8B39E95E %P 042504 %U http://link.aps.org/doi/10.1103/PhysRevA.94.042504 %V 94 %X

Land\'e $g$ factors for the fine-structure $1{s}^{2}2{s}^{2}2p\phantom{\rule{0.16em}{0ex}}^{2}P_{1/2}$ and $^{2}P_{3/2}$ levels in the boron isoelectronic sequence for selected $Z$ values have been calculated using the multiconfiguration Dirac-Fock method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wave function. The results are compared with the available theoretical data, showing a very good agreement.

%Z n/a %8 Oct 04