Thermal dehydrogenation of amorphous silicon: A time-evolution study

de Calheiros Velozo, A., G. Lavareda, C. Nunes de Carvalho, and A. Amaral. "Thermal dehydrogenation of amorphous silicon: A time-evolution study." THIN SOLID FILMS 543 (2013): 48-50.


A model is proposed to describe the decrease of H content in hydrogenated amorphous silicon (a-Si: H), during annealing at a fixed temperature. H content has been measured in several a-Si: H samples ( grown by plasma enhanced chemical vapor deposition) after being submitted to different annealing times at 400 degrees C. Obtained data has been fitted to the proposed model and initial diffusion coefficients of 3.2 x 10(-14) cm(2)/s for intrinsic films and 4.2 x 10(-14) cm(2)/s for n-type films were obtained. Reversely, H content evolution can be predicted during a thermal treatment if diffusion coefficients are previously known. (C) 2013 Elsevier B.V. All rights reserved.


4th International Conference on Nanostructures Self-Assembly (NANOSEA), ITALY, JUN 25-29, 2012